Abstract: The present invention provides a glucose decomposition-suppressed solid preparation for dialysis among powdery or granular preparations for dialysis containing acetate-free solid organic acids as pH adjusting agents. The present invention provides the solid preparation for dialysis containing electrolytes, glucose and pH adjusting agents characterized in that solid organic acids containing reduced amount of microparticles are used, and more specifically, characterized in that solid organic acids whose 20 or less percent of particles are 250 ?m or less in diameter, or solid organic acids whose 10 or less percent of particles are 150 ?m or less in diameter, are used. Preferably, the solid organic acid contained therein is citric acid.

Abstract: Characteristics of a circuit element are predicted accurately by taking account not only of the temperature variation due to self-heating of the element but also of temperature variation due to heat transmission from an adjoining heater element.

Abstract: A semiconductor device, comprising: a semiconductor element 20 having a rectangular two-dimensional geometry and serving as a heat source; and a heat sink section 25 having the semiconductor element 20 mounted thereon, wherein a relation among the directional components of said thermal conductivity is: Kzz?Kyy>Kxx, where directional components of three-dimensional thermal conductivity of the heat sink section 25 in X, Y and Z directions are determined as Kxx, Kyy and Kzz, and where the longer side direction of the semiconductor element 20 is defined as X direction, the shorter side direction thereof is defined as Y direction and the thickness direction is defined as Z direction.

Abstract: A field effect transistor 100 includes a group III-V nitride semiconductor layer structure containing a hetero junction, a source electrode 105 and a drain electrode 106 formed on the group III-V nitride semiconductor layer structure to be spaced apart from each other; a gate electrode 110 arranged between the source electrode 105 and the drain electrode 106, and an insulating layer 107 provided over, and in contact with, the group III-V nitride semiconductor layer structure in a region between the gate electrode 110 and the drain electrode 106 or in a region between the source electrode 105 and the gate electrode 110. A portion of the gate electrode 110 is buried in the group III-V nitride semiconductor layer structure, and a side edge of the gate electrode in an interface of the group III-V nitride semiconductor layer and the insulating layer 107 is spaced apart from the gate electrode 110.

Abstract: In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer).

Abstract: A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device 1, a plurality of HBTs 20 and a plurality of diodes 30 are one-dimensionally and alternately arranged on semiconductor substrate 10. Anode electrode 36 of diode 30 is connected to emitter electrode 27 of HBT 20 via common emitter wiring 42. Diode 30 works as heat dissipating elements dissipating to semiconductor substrate 10 the heat transmitted through common emitter wiring 42 from emitter electrode 27, and also works as a protection diode connected in parallel between an emitter and a collector of HBT 20.

Abstract: A metal film is deposited on a starting substrate, which is any one of a single crystal sapphire substrate, a substrate comprising a single crystal gallium nitride film grown on a sapphire substrate, and a single crystal semiconductor substrate, and a gallium nitride film is deposited on the metal film to form a laminate substrate. By virtue of the above construction, after the growth of the gallium nitride film, the gallium nitride film can be easily separated from the starting substrate, and a gallium nitride crystal substrate, which has low defect density and has not been significantly contaminated with impurities, can be produced in a simple manner.

Abstract: A metal film is deposited on a starting substrate, which is any one of a single crystal sapphire substrate, a substrate comprising a single crystal gallium nitride film grown on a sapphire substrate, and a single crystal semiconductor substrate, and a gallium nitride film is deposited on the metal film to form a laminate substrate. By virtue of the above construction, after the growth of the gallium nitride film, the gallium nitride film can be easily separated from the starting substrate, and a gallium nitride crystal substrate, which has low defect density and has not been significantly contaminated with impurities, can be produced in a simple manner.

Abstract: A method for the measurement of adenyl group-containing substances which comprises deriving a chemiluminescent substance by allowing a compound to react with adenyl group in a substance to be measured, and qualitatively or quantitatively measuring the substance to be measured using a luminescent intensity obtained from the chemiluminescent substance as a marker.

Abstract: A peptide of the general formula:H-X-A-Ywherein A is a peptide fragment comprising 6 to 50 amino acids, X is a peptide fragment comprising 1 to 10 Lys, and Y is hydroxy or amino group, said peptide being capable of specifically binding to an antibody having a specificity against an adult T cell leukemia associated antigen, a reagent for measuring an antibody having a specificity against an adult T cell leukemia associated antigen which comprises the peptide, and an adsorbent for an antibody having a specificity against an adult T cell leukemia associated antigen which comprises the peptide immobilized on a carrier.