Abstract: In a thin film forming method and an apparatus A for implementing the method, a deposition chamber 1 provided with a substrate holder 12 and a radical emitting device 2 continuing to the chamber 1 for emitting neutral radicals uniformly to a whole deposition target region of a deposition target substrate S held by the holder 12 are used. Deposition gas plasma PL1 is formed at the vicinity of the substrate S on the holder 12 by supplying a predetermined deposition gas into the chamber 1. Neutral radicals RA are produced by exciting and dissociating a predetermined radical material gas in the radical emitting device 2, and the radicals are uniformly emitted to the deposition target region of the substrate S for forming a predetermined thin film on the substrate S.

Abstract: A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.

Abstract: A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.