Abstract: A gate insulating film has a multilayer structure including a SiO2 film, a LaAlO3 film, and an Al2O3 film that are sequentially stacked, relative permittivity of the gate insulating film being optimized by the LaAlO3 film. In forming the LaAlO3 film constituting the gate insulating film, a La2O3 film and an Al2O3 film are alternately deposited repeatedly using an ALD method. The La2O3 film is deposited first, whereby during a POA performed thereafter, a sub-oxide of the surface of the SiO2 film is removed by a cleaning effect of lanthanum atoms in the La2O3 film. A temperature of the POA is suitably set in a range from 700 degrees C. to less than 900 degrees C.

Abstract: [Problem] A substrate treatment apparatus that can protect an AC power supply connected to a heater is provided. [Means for solving the problem] A substrate treatment apparatus includes a lower electrode formed of a dielectric, a first AC power supply that is connected to a first internal electrode included in the lower electrode and supplies AC power with a first frequency, a heater included in the lower electrode to heat the lower electrode, a filter circuit connected to the heater, and a second AC power supply connected to the heater via the filter circuit and used for the heater, in which the filter circuit includes a parallel circuit that connects a low-pass filter with a cut-off frequency that is lower than the first frequency and a high-pass filter with a cut-off frequency that is higher than the first frequency in parallel.

Abstract: Examples of a substrate processing apparatus includes a chamber, a susceptor provided in the chamber, a shower head provided above the susceptor, and a flow control ring having a shape to surround the susceptor, the flow control ring having a first top surface and a second top surface that has an annular shape and is provided closer to an inner edge of the flow control ring than the first top surface at a higher level than the first top surface, the second top surface being a sloped surface whose height decreases toward the first top surface.

Abstract: Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

Abstract: A resister clip (35) includes engage portions (35a) engaging with an engage groove, a spring portion (35b) and operating portions (35c). The spring portion (35b) can be designed with a high degree of freedom in terms of a coil number of turns, a winding diameter and others and the engage portions (35a) are widened centering on the spring portion (35b), so that diameter-widening resistance can be optimized.

Abstract: A substrate processing apparatus includes a chamber, a manifold including a tubular portion above the chamber, first and second introduction pipes provided on a side surface of the tubular portion, and a gas guide portion to guide, in a direction opposite the chamber, gases introduced from the first and second introduction pipes into the tubular portion, and then introduce the gases into the chamber. The gas guide portion does not contact a top of the manifold, and the manifold includes a space above the gas guide portion to allow the gases to flow from between the gas guide portion and the tubular portion into a space surrounded by the gas guide portion. The gas guide portion advantageously enables the gases to broadly diffuse and uniformly mix, increasing the quality of a film formed on a substrate inside the chamber.

Abstract: A gas distribution assembly and methods for adjusting the gas flow through a gas supply unit into a reaction chamber are disclosed. The gas distribution assembly and methods can be used to increase or decrease gas flow uniformly through the gas supply unit. The gas distribution assembly and methods can also be used to increase gas flow into one area of the reaction chamber, while decreasing gas flow into another area.

Abstract: Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

Abstract: An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.

Abstract: Examples of a substrate processing apparatus includes a chamber, a manifold including a tubular portion provided above the chamber, a first introduction pipe provided on a side surface of the tubular portion, a second introduction pipe provided on the side surface of the tubular portion, and a gas guide portion configured to once guide, in a direction opposite to the chamber, gases introduced from the first introduction pipe and the second introduction pipe into the tubular portion, and then introduce the gases into the chamber, a first gas source configured to supply gas into the first introduction pipe, and a second gas source configured to supply gas into the second introduction pipe.

Abstract: A substrate treatment apparatus includes a lower electrode, an upper electrode, a first AC power supply that is connected to the upper electrode and supplies AC power at a first frequency, a second AC power supply that is connected to the upper electrode and supplies AC power at a second frequency which is lower than the first frequency, an internal electrode provided in the lower electrode, a filter circuit connected to the internal electrode, and a DC power supply connected to the internal electrode via the filter circuit. The filter circuit includes a first filter circuit that becomes low impedance with respect to AC power at the first frequency compared to AC power at the second frequency, and a second filter circuit that becomes low impedance with respect to AC power at the second frequency compared to AC power at the first frequency.

Abstract: A resister clip (35) includes engage portions (35a) engaging with an engage groove, a spring portion (35b) and operating portions (35c). The spring portion (35b) can be designed with a high degree of freedom in terms of a coil number of turns, a winding diameter and others and the engage portions (35a) are widened centering on the spring portion (35b), so that diameter-widening resistance can be optimized.

Abstract: An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.

Abstract: A substrate treatment apparatus includes a lower electrode, an upper electrode, a first AC power supply that is connected to the upper electrode and supplies AC power at a first frequency, a second AC power supply that is connected to the upper electrode and supplies AC power at a second frequency which is lower than the first frequency, an internal electrode provided in the lower electrode, a filter circuit connected to the internal electrode, and a DC power supply connected to the internal electrode via the filter circuit. The filter circuit includes a first filter circuit that becomes low impedance with respect to AC power at the first frequency compared to AC power at the second frequency, and a second filter circuit that becomes low impedance with respect to AC power at the second frequency compared to AC power at the first frequency.

Abstract: A semiconductor manufacturing apparatus includes a stage, and an exhaust duct having an annular passage surrounding a processing space over the stage, an annular slit through which a gas supplied to the processing space is led into the annular passage, and an exhaust port through which the gas in the annular passage is discharged to the outside, wherein the opening-area percentage of the slit is increased with increase in distance from the exhaust port.

Abstract: A film forming apparatus includes a susceptor, and a shower head provided above the susceptor and having a first passage and a second passage independent of the first passage formed therein, wherein the first passage is formed through the shower head by being provided with a first cavity surrounded by a first upper wall and a first lower wall, a first thin hole formed in the first upper wall, and a plurality of second thin holes formed in the first lower wall, the height of the first upper wall in the vertical direction is reduced with increase in distance from the first thin hole, and the second passage is formed in the same manner as the first passage.

Abstract: A semiconductor manufacturing apparatus includes a stage, and an exhaust duct having an annular passage surrounding a processing space over the stage, an annular slit through which a gas supplied to the processing space is led into the annular passage, and an exhaust port through which the gas in the annular passage is discharged to the outside, wherein the opening-area percentage of the slit is increased with increase in distance from the exhaust port.

Abstract: An anti-slip end-effector for transporting a workpiece, which is configured to be attached to a robotic arm, includes: a workpiece-supporting area for placing a workpiece thereon for transportation; at least one front protrusion disposed at a distal end of the workpiece-supporting area for engaging an edge of the workpiece to restrict movement of the workpiece placed on the workpiece-supporting area beyond the front protrusion; and at least one anti-slip protrusion disposed in the workpiece-supporting area for contacting and supporting the backside of the workpiece, said anti-slip protrusion having a top face having a static friction coefficient of 1.0 or more as measured against the backside of the workpiece, and having a surface roughness of less than 0.4 ?m.

Abstract: A film forming apparatus includes a susceptor, and a shower head provided above the susceptor and having a first passage and a second passage independent of the first passage formed therein, wherein the first passage is formed through the shower head by being provided with a first cavity surrounded by a first upper wall and a first lower wall, a first thin hole formed in the first upper wall, and a plurality of second thin holes formed in the first lower wall, the height of the first upper wall in the vertical direction is reduced with increase in distance from the first thin hole, and the second passage is formed in the same manner as the first passage.