Abstract: A method for fabricating a semiconductor device includes: forming on a substrate a silicon-containing insulation film having a diffusion coefficient of about 250 ?m2/min or less as measured using isopropyl alcohol, by plasma reaction using a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing plural cross-linkable groups, (ii) a cross-linking gas, (iii) an inert gas, and optionally (iv) an oxygen-supplying gas, wherein a flow rate of the oxygen-supplying gas is no more than 25% of that of the source gas; and subjecting the insulation film to an integration process to fabricate a semiconductor device.

Abstract: A method of forming a fluorine-containing dielectric film on a substrate by plasma CVD, includes: introducing as a process gas a fluorinated carbon compound having at least two double bonds in its molecule and an unsaturated hydrocarbon compound into a reaction space wherein a substrate is placed; and applying RF power to the reaction space to deposit a fluorine-containing dielectric film on the substrate by plasma CVD.

Abstract: A plasma CVD apparatus includes a showerhead comprised of a body having a hollow structure. The shower plate is detachably integrated with the body at a peripheral surface of the body and a peripheral surface of the shower plate, and at least one of the peripheral surface of the body or the peripheral surface of the shower plate is surface-treated.

Abstract: A method for determining conditions for forming a dielectric SiOCH film, includes: (i) forming a dielectric SiOCH film on a substrate under conditions; (ii) evaluating the conditions using a ratio of Si—CH3 bonding strength to Si—O bonding strength of the film as formed in step (i); (iii) if the ratio is 2.50 % or higher, confirming the conditions, and if the ratio is less than 2.50 %, changing the conditions by changing at least one of the susceptor temperature, the distance between upper and lower electrodes, the RF power, and the curing time; and (iv) repeating steps (i) to (iii) until the ratio is 2.50 % or higher.

Abstract: A method for reducing a dielectric constant of a cured film, includes: introducing a source gas at a flow rate of A, a porogen gas at a flow rate of B, an oxidizing gas at a flow rate of C, and an inert gas into a reaction space in which a substrate is place; increasing a ratio of B/(A+B) used as a parameter for controlling a dielectric constant of a cured film, by a degree substantially or nearly in proportion to a target decrease of dielectric constant of a cured film; applying RF power to the reaction space, thereby depositing a film on the substrate by plasma CVD; and curing the film to remove the porogen material, thereby forming pores in the cured film.

Abstract: A method for increasing mechanical strength of a dielectric film includes: providing an initial dielectric film containing porogen; irradiating the initial dielectric film with first UV light having a first wavelength which is substantially or nearly similar to a maximum light absorption wavelength of the porogen for removing the porogen; and then irradiating the porogen-removed dielectric film with second UV light having a second wavelength which is shorter than the first wavelength, thereby increasing mechanical strength of the dielectric film.

Abstract: A plasma CVD film formation apparatus includes: a reaction chamber; a shower plate installed inside the reaction chamber; and a susceptor for placing a wafer thereon installed substantially parallel to and facing the shower plate. The shower plate has a surface facing the susceptor, which is configured using a convex shape toward a center as a basic shape and overlaying at least one equation thereon, and the susceptor supports the wafer at a peripheral portion and at a position between a central portion and the peripheral portion.

Abstract: A plasma CVD film formation apparatus includes: a reaction chamber; a shower plate installed inside the reaction chamber; and a susceptor for placing a wafer thereon installed substantially parallel to and facing the shower plate. The shower plate has a surface facing the susceptor, which is configured using a convex shape toward a center as a basic shape and overlaying at least one equation thereon, and the susceptor supports the wafer at a peripheral portion and at a position between a central portion and the peripheral portion.

Abstract: A method for depositing a thin film on a substrate by plasma CVD includes: providing a vacuum chamber including a showerhead and a susceptor entirely facing the showerhead in parallel, placing a substrate on the susceptor entirely within the inner portion; and applying an RF power between the showerhead and the susceptor to deposit a thin film on the substrate. The susceptor includes an inner portion and a peripheral portion that is defined as any portion enclosing the inner portion and defines an electrically effective distance from the showerhead greater than that defined by the inner portion.

Abstract: A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing multiple cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed. The insulation film is then exposed to electron beam radiation, thereby increasing mechanical strength of the film without substantial alternation of its dielectric constant.

Abstract: An interlayer insulation film for multilayer interconnect of a semiconductor integrated circuit is formed by forming a first insulation film on a substrate by plasma CVD using a silicon-containing hydrocarbon gas; and continuously forming a second insulation film on the first insulation film at a thickness less than the first insulation film in situ by plasma CVD using a silicon-containing hydrocarbon gas and an oxidizing gas. The second insulation film has a hardness of 6 GPa or higher and is used as a polishing stop layer.

Abstract: A method for fabricating a semiconductor device includes: forming on a substrate a silicon-containing insulation film having a diffusion coefficient of about 250 ?m2/min or less as measured using isopropyl alcohol, by plasma reaction using a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing plural cross-linkable groups, (ii) a cross-linking gas, (iii) an inert gas, and optionally (iv) an oxygen-supplying gas, wherein a flow rate of the oxygen-supplying gas is no more than 25% of that of the source gas; and subjecting the insulation film to an integration process to fabricate a semiconductor device.

Abstract: A method of forming low-dielectric-constant silicon oxide films by capacitive-coupled plasma CVD comprises: introducing a processing gas comprising SiH4 as a silicon source gas, SiF4 as a fluorine source gas, and CO2 as an oxidizing gas to a reaction chamber at a ratio of (SiH4+SiF4)/CO2 in the range of 0.02 to 0.2 and at a total pressure of 250 Pa to 350 Pa; applying first RF power at a frequency of 10 MHz to 30 MHz and second RF power at a frequency of 400 kHz to 500 kHz by overlaying the two RF powers to generate a plasma reaction field within the reaction chamber; and controlling a flow of the respective gases and the respective RF power outputs.

Abstract: An electron-beam irradiation apparatus includes an evacuatable filament-electron gun chamber housing a filament and an anode and having an inactive-gas inlet through which an inactive gas flows in; an evacuatable treatment chamber connected to an exhaust system; and a separation wall for separating the filament-electrode gun chamber and the treatment chamber. The separation wall has an aperture configured to pass electrons and gas therethrough from the filament-electron gun chamber.

Abstract: A method of forming low-dielectric-constant silicon oxide films by capacitive-coupled plasma CVD comprises: introducing a processing gas comprising SiH4 as a silicon source gas, SiF4 as a fluorine source gas, and CO2 as an oxidizing gas to a reaction chamber at a ratio of (SiH4+SiF4)/CO2 in the range of 0.02 to 0.2 and at a total pressure of 250 Pa to 350 Pa; applying first RF power at a frequency of 10 MHz to 30 MHz and second RF power at a frequency of 400 kHz to 500 kHz by overlaying the two RF powers to generate a plasma reaction field within the reaction chamber; and controlling a flow of the respective gases and the respective RF power outputs.

Abstract: A cleaning method for CVD apparatus wherein by-products such as SiO2 and Si3N4 adhered to and deposited on surfaces of the inner wall, electrodes and other parts of a reaction chamber at the stage of film formation can be removed efficiently. Furthermore, the amount of cleaning gas discharged is so small that the influence on environment such as global warming is little and cost reduction can be also attained. After the film formation on a base material surface by the use of CVD apparatus, a fluorinated cleaning gas containing a fluorcompound is converted to plasma by means of a remote plasma generator, and the cleaning gas having been converted to plasma is introduced into a reaction chamber so that any by-products adhered to inner parts of the reaction chamber is removed.

Abstract: A shower plate 122 has protrusions 22 formed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portion 23 is left around apertures of gas inlet holes 21 formed in the shower plate 122. With protrusions 22 being formed, a surface area of the first electrode is increased.

Abstract: A plasma CVD apparatus includes a showerhead comprised of a body having a hollow structure. The shower plate is detachably integrated with the body at a peripheral surface of the body and a peripheral surface of the shower plate, and at least one of the peripheral surface of the body or the peripheral surface of the shower plate is surface-treated.

Abstract: A method of forming an interlayer insulation film on a semiconductor substrate using plasma CVD includes introducing a source gas into a reaction chamber, applying radio-frequency power after the source gas is brought in, introducing an oxidizing gas with or without an additive gas into the reaction chamber after the completion of supplying the source gas and applying the radio-frequency power, and applying the radio-frequency power again. The concentration of the oxidizing gas may be 0.3% or higher and a processing time period by the oxidizing gas may be three seconds or longer.

Abstract: A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing multiple cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed. The insulation film is then exposed to electron beam radiation, thereby increasing mechanical strength of the film without substantial alternation of its dielectric constant.