Abstract: A semiconductor device has a multilayer interconnection including a copper interconnection film formed in a predetermined area within an insulating film, a liner film, and a high-melting-point metal film. The copper interconnection film is polycrystalline, and crystal grains occupying 40% or more of an area of a unit interconnection surface among crystal grains forming the polycrystal are oriented to (111) in a substrate thickness direction. The copper interconnection film has crystal conformity with the noble metal liner film. In a case where the high-melting-point metal film is formed of Ti and the noble metal liner film is a Ru film, the high-melting-point metal of Ti dissolves into Ru in a solid state to form the noble metal liner. Thus, a copper interconnection is formed with both of Cu diffusion barrier characteristics and Cu crystal conformity.

Abstract: A trench is formed in an insulation film formed on top of a semiconductor substrate, and a barrier metal film is formed on the surface of the trench. After a copper or copper alloy film is formed on the barrier metal film, an oxygen absorption film in which a standard energy of formation of an oxidation reaction in a range from room temperature to 400° C. is negative, and in which an absolute value of the standard energy of formation is larger than that of the barrier metal film is formed, and the assembly is heated in a temperature range of 200 to 400° C. A semiconductor device can thereby be provided that has highly reliable wiring, in which the adhesion to the barrier metal film in the copper interface is enhanced, copper diffusion in the interface is suppressed, and electromigration and stress migration are prevented.

Abstract: A method of manufacturing a semiconductor device includes: forming a cap insulating film, including Si and C, on a substrate; forming an organic silica film, having a composition ratio of the number of carbon atoms to the number of silicon atoms higher than that of the cap insulating film, on the cap insulating film; and forming two or more concave portions, having different opening diameters, in the organic silica film, by plasma processing in which mixed gas including inert gas, N-containing gas, fluorocarbon gas and oxidant gas is used.

Abstract: A semiconductor device includes a semiconductor substrate, an insulating film formed above the semiconductor substrate, and a multilayered wiring formed in a prescribed area within the insulating film. The multilayered wiring includes a dual damascene wiring positioned on at least one layer of the multilayered wiring. The dual damascene wiring includes an alloy having copper as a principal component. A concentration of at least one metallic element contained as an added component of the alloy in a via connected to the dual damascene wiring is 10% or more higher in a via connected to a wiring whose width exceeds by five or more times a diameter of the via than that in another via connected to another wiring of a smallest width in a same upper wiring layer of the multilayered wiring.

Abstract: A multilayered wiring is formed in a prescribed area in an insulating film that is formed on a semiconductor substrate. Dual damascene wiring that is positioned on at least one layer of the multilayered wiring is composed of an alloy having copper as a principal component. The concentration of at least one metallic element contained in the alloy as an added component in vias of the dual damascene wiring is determined according to the differences in the width of the wiring of an upper layer where the vias are connected. Specifically, a larger wiring width in the upper layer corresponds to a higher concentration of at least one metallic element within the connected vias. Accordingly, increases in the resistance of the wiring are minimized, the incidence of stress-induced voids is reduced, and reliability can be improved.

Abstract: In a formation method of a porous insulating film by supplying at least organosiloxane and an inert gas to a reaction chamber and forming an insulating film by a plasma vapor deposition method, a partial pressure of the organosiloxane in the reaction chamber is changed by varying a volume ratio of the organosiloxane and the inert gas to be supplied during deposition. Thus, the dielectric constant of the insulating film in the semiconductor device is reduced while the adhesion of the insulating film with other materials is improved. It is desirable that the organosiloxane be cyclic organosiloxane including at least silicon, oxygen, carbon, and hydrogen, and that the total pressure of the reaction chamber be constant during deposition.

Abstract: A trench is formed in an insulation film formed on top of a semiconductor substrate, and a barrier metal film is formed on the surface of the trench. After a copper or copper alloy film is formed on the barrier metal film, an oxygen absorption film in which a standard energy of formation of an oxidation reaction in a range from room temperature to 400° C. is negative, and in which an absolute value of the standard energy of formation is larger than that of the barrier metal film is formed, and the assembly is heated in a temperature range of 200 to 400° C. A semiconductor device can thereby be provided that has highly reliable wiring, in which the adhesion to the barrier metal film in the copper interface is enhanced, copper diffusion in the interface is suppressed, and electromigration and stress migration are prevented.

Abstract: A trench is formed in an insulation film formed on top of a semiconductor substrate, and a barrier metal film is formed on the surface of the trench. After a copper or copper alloy film is formed on the barrier metal film, an oxygen absorption film in which a standard energy of formation of an oxidation reaction in a range from room temperature to 400° C. is negative, and in which an absolute value of the standard energy of formation is larger than that of the barrier metal film is formed, and the assembly is heated in a temperature range of 200 to 400° C. A semiconductor device can thereby be provided that has highly reliable wiring, in which the adhesion to the barrier metal film in the copper interface is enhanced, copper diffusion in the interface is suppressed, and electromigration and stress migration are prevented.

Abstract: A method for forming porous insulating film using cyclic siloxane raw material monomer is provided, which method suppresses detachment of hydrocarbon and is able to form a low-density film. In a method where at least cyclic organosiloxane raw material 101 is supplied to a reaction chamber and an insulating film is formed by plasma vapor deposition method, above-mentioned problem is solved by a method for a forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material 101 and a compound raw material 103 including a part of chemical structure comprising the cyclic organosiloxane raw material 101. The compound raw material 103 is preferably a compound including a part of side chain of the cyclic organosiloxane raw material 101.

Abstract: A trench is formed in an insulation film formed on top of a semiconductor substrate, and a barrier metal film is formed on the surface of the trench. After a copper or copper alloy film is formed on the barrier metal film, an oxygen absorption film in which a standard energy of formation of an oxidation reaction in a range from room temperature to 400° C. is negative, and in which an absolute value of the standard energy of formation is larger than that of the barrier metal film is formed, and the assembly is heated in a temperature range of 200 to 400° C. A semiconductor device can thereby be provided that has highly reliable wiring, in which the adhesion to the barrier metal film in the copper interface is enhanced, copper diffusion in the interface is suppressed, and electromigration and stress migration are prevented.

Abstract: A semiconductor device has a multilayer interconnection including a copper interconnection film formed in a predetermined area within an insulating film, a liner film, and a high-melting-point metal film. The copper interconnection film is polycrystalline, and crystal grains occupying 40% or more of an area of a unit interconnection surface among crystal grains forming the polycrystal are oriented to (111) in a substrate thickness direction. The copper interconnection film has crystal conformity with the noble metal liner film. In a case where the high-melting-point metal film is formed of Ti and the noble metal liner film is a Ru film, the high-melting-point metal of Ti dissolves into Ru in a solid state to form the noble metal liner. Thus, a copper interconnection is formed with both of Cu diffusion barrier characteristics and Cu crystal conformity.

Abstract: In a formation method of a porous insulating film by supplying at least organosiloxane and an inert gas to a reaction chamber and forming an insulating film by a plasma vapor deposition method, a partial pressure of the organosiloxane in the reaction chamber is changed by varying a volume ratio of the organosiloxane and the inert gas to be supplied during deposition. Thus, the dielectric constant of the insulating film in the semiconductor device is reduced while the adhesion of the insulating film with other materials is improved. It is desirable that the organosiloxane be cyclic organosiloxane including at least silicon, oxygen, carbon, and hydrogen, and that the total pressure of the reaction chamber be constant during deposition.

Abstract: A multilayered wiring is formed in a prescribed area in an insulating film that is formed on a semiconductor substrate. Dual damascene wiring that is positioned on at least one layer of the multilayered wiring is composed of an alloy having copper as a principal component. The concentration of at least one metallic element contained in the alloy as an added component in vias of the dual damascene wiring is determined according to the differences in the width of the wiring of an upper layer where the vias are connected. Specifically, a larger wiring width in the upper layer corresponds to a higher concentration of at least one metallic element within the connected vias. Accordingly, increases in the resistance of the wiring are minimized, the incidence of stress-induced voids is reduced, and reliability can be improved.