Abstract: A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the second free magnetic layer is formed in contact with the nonmagnetic conductive layer, the first and second free magnetic layers are antiferromagnetically coupled with each other to bring both layers into a ferrimagnetic state, and either of the first and second free magnetic layers comprises a ferromagnetic insulating film.

Abstract: A spin-valve thin-film magnetic element includes a substrate, a composite formed thereon, and electrode layers formed on both sides of the composite. The composite includes an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a mean-free-path-extending layer, and an exchange bias layer. The mean-free-path-extending layer may be a back layer or a mirror reflective layer. The mean-free-path-extending layer extends the mean free path of spin-up conduction electrons in the spin-valve thin-film magnetic element. This spin-valve thin-film magnetic element meets trends toward a narrower track width.

Abstract: A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient ? than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient ? than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient ? of the free magnetic layer.

Abstract: A seed layer having a chromium content in the range of 35 to 60 atomic percent and a thickness of 10 to 200 ? is deposited to have a single phase of the face-centered cubic structure by optimizing the sputtering conditions, etc. The surface of the seed layer maintaining the face-centered cubic structure exhibits improved wettability, and the rate of change in resistance ?R/R can thereby be improved.

Abstract: The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized.

Abstract: A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invention, the crystal grain boundaries formed in an antiferromagnetic layer (PtMn alloy film) and the crystal grain,boundaries formed in a ferromagnetic layer are made discontinuous in at least a portion of the interface between both layers. As a result, the antiferromagnetic layer can be appropriately transformed to an ordered lattice by heat treatment to obtain a larger exchange coupling magnetic field than a conventional element.

Abstract: An exchange-coupled film includes a ferromagnetic layer and an antiferromagnetic layer disposed on each other, the magnetization direction of the ferromagnetic layer being pinned in one direction by an exchange coupling magnetic field generated at the interface between the ferromagnetic layer and the antiferromagnetic layer, wherein the antiferromagnetic layer is composed of IrzMn100-z (wherein 2 atomic percent?z?80 atomic percent), the ferromagnetic layer has a two-layer structure including a CoyFe100-y layer having a face-centered cubic structure (wherein 80 atomic percent?y?100 atomic percent), the CoyFe100-y layer being in contact with the antiferromagnetic layer, and an FexCo100-x layer (wherein x?30 atomic percent), the FexCo100-x layer being disposed on the CoyFe100-y layer, and the thickness of the FexCo100-x layer is 30% to 90% of the total thickness of the ferromagnetic layer.

Abstract: An intermediate region is formed at a central portion of an element in a track width direction, and an antiferromagnetic layer is not provided at the intermediate region. Accordingly, a sense current can be prevented from being shunted to the intermediate region, and as a result, improvement in reproduction output and strength against magnetic electrostatic damage can be realized. In addition, since the thickness of the central portion of the element is decreased, trend toward narrower gap can be realized. Furthermore, since the direction of magnetization of a free magnetic layer is oriented in the track width direction by shape anisotropy, means for orienting the magnetization is not necessary, and hence the structure and manufacturing method of the element can be simplified.

Abstract: A multilayer film is placed on a substrate. The multilayer film includes an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic material layer, and a free magnetic layer. The multilayer film has recessed sections arranged in both side regions thereof, the recessed sections being formed by partly removing the multilayer film in a vacuum. The bottoms of the recessed sections are located between the upper face and lower face of the antiferromagnetic layer. Amorphous barrier layers with a thickness of ? are placed on the bottoms of the recessed sections, the amorphous barrier layers being formed in the same vacuum as that for forming the recessed sections sequentially to the step of forming the recessed sections.

Abstract: A magnetic sensing element exhibiting a large ?RA is provided, in which a free magnetic layer has a small coercive force Hc and a small magnetostriction constant ?s. The free magnetic layer includes a Co2MnZ alloy layer (where Z may represent at least one element selected from the group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a (NiaFe100-a)bX100-b alloy layer (where X may represent at least one element selected from the group consisting of Cu, Au, Ag, Zn, Mn, Al, Cd, Zr, and Hf, a may represent a composition ratio satisfying 80<a?100, and b may represent a composition ratio satisfying 60<b?100). Consequently, the magnetostriction constant ?s and the coercive force Hc of the free magnetic layer may be decreased and the soft magnetic properties of the free magnetic layer may be improved.

Abstract: A magnetic detecting element has a multilayer laminate including a first free magnetic layer. A second antiferromagnetic layer is disposed on each side surface of the multilayer laminate in the track width direction. A second free magnetic layer is disposed from the upper surface of the second antiferromagnetic layer to the upper surface of the first free magnetic layer. Thus, the shield distance in the central portion of the element can be prevented from increasing, and the insulation between a shield layer and an electrode layer is enhanced.

Abstract: A CPP magnetic sensing element is provided which may exhibit a large value of ?RA (the product of the resistance variation ?R and area A of the magnetic sensing element). The magnetic sensing element includes a free magnetic layer and a pinned magnetic layer. At least one of these layers has a (Co0.67Fe0.33)100-aZa alloy layer, wherein Z may represent at least one element selected from the group consisting of Al, Ga, Si, Ge, Sn, and Sb, and the parameter a may satisfy the relationship 0<a?30 in terms of atomic percent.

Abstract: In a magnetic detecting element, second ferromagnetic layers are deposited on respective second antiferromagnetic layers. The magnetization direction of the second ferromagnetic layers is antiparallel to that of first ferromagnetic layers. A static magnetic field generated by a surface magnetic charge at the internal side surfaces of the first ferromagnetic layers is absorbed by the second ferromagnetic layers. Thus, it becomes hard that the static magnetic field from the first ferromagnetic layers enters the central portion of a free magnetic layer. Consequently, the central portion of the free magnetic layer can maintain its single magnetic domain state, and, thus, the hysteresis can be reduced and the Barkhausen noise is suppressed.

Abstract: A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

Abstract: A magnetic sensing element comprising a stably magnetized free magnetic layer is provided. Hard bias layers are disposed at the two sides of the free magnetic layer, and a third antiferromagnetic layer is disposed on the free magnetic layer. Side regions of the free magnetic layer extending beyond the track width are overlaid by second antiferromagnetic layers with the third antiferromagnetic layer therebetween. The magnetization directions of the side regions of the free magnetic layer are pinned in the track width direction by a synergetic effect of the exchange coupling magnetic fields generated between the side regions of the free magnetic layer and the third antiferromagnetic layer and the longitudinal bias magnetic fields from the hard bias layers.

Abstract: A magnetic detecting element, which can suppress change in output asymmetry even if the magnetization direction of a pinned magnetic layer is changed 180°, is provided. The magnetic-film-thickness of a second free magnetic layer is increased so as to be greater than that of a first free magnetic layer and offset the torque applied to the second free magnetic layer with that applied to the first free magnetic layer when the sensing current magnetic field occurs. Thus, change in the magnetization direction of the free magnetic layer before and after a sensing current is applied in the magnetic detecting element can be suppressed. The orthogonal state between the free magnetic layer and the pinned magnetic layer is maintained even when a sensing current in the same direction as that before the occurrence is applied in the magnetic detecting element wherein pin inversion occurred, and the output asymmetry is maintained suitably.

Abstract: Changes of the direction of magnetization at the central region of the free magnetic layer are facilitated by using a layer of a magnetic material having a small exchange stiffness constant such as a NiaFeb layer (a and b are represented in at %, and satisfy the relation of a>80 and a+b=100) and NiFeX layer (X is at least one element selected from Mn, Cu, Zn, Ti, Al, Ge, Si, Cr, V, Sn, Ir, Ru, Nb, Sb, W, Mo, Os and Ta) for the magnetic material layer of the free magnetic layer.

Abstract: An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of the antiferromagnetic layer and the ferromagnetic layer preferentially aligned parallel to the interface are crystallographically identical and crystallographically identical axes lying in these crystal planes are oriented, at least partly, in different directions between the antiferromagnetic layer and the ferromagnetic layer. Thus, a proper order transformation occurs in the antiferromagnetic layer as a result of heat treatment and an increased exchange coupling magnetic field can be obtained.

Abstract: A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the second free magnetic layer is formed in contact with the nonmagnetic conductive layer, the first and second free magnetic layers are antiferromagnetically coupled with each other to bring both layers into a ferrimagnetic state, and either of the first and second free magnetic layers comprises a ferromagnetic insulating film.

Abstract: A magnetic sensing element and exchange coupling film is disclosed. The magnetic sensing element has a free magnetic layer, nonmagnetic material layers disposed on the top and bottom of the free magnetic layer, pinned magnetic layers disposed on the top of one nonmagnetic material layer and on the bottom of the other nonmagnetic material layer, and antiferromagnetic layers containing IrMn disposed on the top of one pinned magnetic layer and on the bottom of the other pinned magnetic layer. The magnetization of the free magnetic layer is aligned in a direction orthogonal to the magnetization direction of the pinned magnetic layers. The exchange coupling film is formed by the antiferromagnetic layer and the pinned magnetic layer above the free magnetic layer. At least an interfacial portion of the ferromagnetic layer which is adjacent to the antiferromagnetic layer contains Co100-xFex wherein 30%?x?90% in atomic percent.