Abstract: A first magnetic sublayer constituting a pinned magnetic layer is provided in contact with a first magnetostriction-enhancing layer to increase the magnetostriction constant of the first magnetic sublayer. In addition, a nonmagnetic intermediate sublayer constituting the pinned magnetic layer is made of a material having a lattice constant larger than that of Ru, such as a Ru—X alloy, to distort the crystal structures of the first magnetic sublayer and a second magnetic sublayer each in contact with the nonmagnetic intermediate sublayer, increasing the magnetostriction constants of the first magnetic sublayer and the second magnetic sublayer.

Abstract: A magnetic sensing element is provided, in which magnetization of a free magnetic layer is likely to fluctuate when the track width is further reduced, and thereby, the magnetic field detection sensitivity can be improved. A second free magnetic layer having a dimension W2 in the track-width direction is laminated on a first free magnetic layer having a dimension W1 in the track-width direction while the dimension W2 is larger than the dimension W1. The film thickness ta of the free magnetic layer in the track-width region A is made larger than the film thickness tb of the free magnetic layer in both side regions B and B. Consequently, the magnetic flux density in the track-width region A of the free magnetic layer resulting from the static magnetic fields generated from both the side regions B and B of the free magnetic layer can be reduced, a dead zone which occurs in the track-width region A of the free magnetic layer can be reduced, and therefore, the magnetic field detection sensitivity is improved.

Abstract: A magnetic sensing element of a current-perpendicular-to-plane (CPP) type that minimizes an increase in effective read track width and prevents side reading is provided. The magnetic sensing element includes a composite film, an upper shield layer, a lower shield layer, and side shield layers. The side shield layers are disposed at the two sides of the composite film in the track width direction between the lower shield layer and the upper shield layer.

Abstract: A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer is disposed between nonmagnetic metal magnetostriction-enhancing layers. CPP magnetic detecting elements allow this structure without degrading the GMR effect. Thus, the magnetostriction coefficient of the pinned magnetic layer can be increased from above and below to produce an appropriate magnetoelasticity. Consequently, the magnetization of the pinned magnetic layer can be more firmly fixed.

Abstract: In a magnetic sensing element, the amounts of spin-dependent bulk scattering in the upstream part of a multilayer film and in the downstream part of the multilayer film are controlled to be asymmetric. Thus, a value ?R×A, which represents the variation in magnetoresistance×element area, for the upstream part of the multilayer film is controlled so as to be smaller than the value ?R×A for the downstream part of the multilayer film.

Abstract: A magnetic sensing device is presented that has a multilayer material with a pinned magnetic layer, a nonmagnetic material layer, and a free magnetic layer. The pinned magnetic layer is a composite with a nonmagnetic intermediate layer and magnetic thin-film layers separated from each other by the nonmagnetic intermediate layer. A first nonmagnetic magnetostriction-enhancing layer is on the pinned magnetic layer and contacts a first thin-film layer placed farthest from the nonmagnetic material layer. At least one of the magnetic thin-film layers has a composite structure with a second nonmagnetic magnetostriction-enhancing layer and magnetic layers separated from each other by the second magnetostriction-enhancing layer. All of the magnetic layers are magnetized in the same direction antiparallel to the adjacent magnetic thin-film layer. At least some crystals of the first and second magnetostriction-enhancing layers and the first thin-film layer/magnetic layers are epitaxial or heteroepitaxial.

Abstract: An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of the antiferromagnetic layer and the ferromagnetic layer preferentially aligned parallel to the interface are crystallographically identical and crystallographically identical axes lying in these crystal planes are oriented, at least partly, in different directions between the antiferromagnetic layer and the ferromagnetic layer. Thus, a proper order transformation occurs in the antiferromagnetic layer as a result of heat treatment and an increased exchange coupling magnetic field can be obtained.

Abstract: A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer having an artificial ferrimagnetic structure are disposed between a magnetostriction-enhancing layer made of a nonmagnetic metal and a nonmagnetic material layer having a higher lattice constant than Cu. CPP magnetic detecting elements allow this structure without reducing the variation in resistance per unit area ?R·A. Thus, the magnetostriction coefficient of the pinned magnetic layer can be increased from above and below, thereby more firmly fixing the magnetization of the pinned magnetic layer.

Abstract: The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized.

Abstract: When a pinned magnetic layer includes an underlayer and a Heusler alloy layer, a product ?R×A of the amount of change in resistance and an element surface area of a magnetic sensor per unit area is increased. That is, a magnetic field detection sensitivity of the magnetic sensor can be improved. It is believed that the magnetic field detection sensitivity of the magnetic sensor is improved by the present invention because a misfit percentage between the underlayer and the Heusler alloy layer is small, and therefore the crystallinity or the periodicity of the Heusler alloy layer is improved.

Abstract: A spin-valve thin-film magnetic element includes a laminate including a free magnetic layer and a pinned magnetic layer. A pair of hard bias layers is provided on both sides of the laminate to orient the magnetic moment of the free magnetic layer in one direction. A pair of insulating layers extend over the hard bias layers and both top ends of the laminate in the track width direction. A pair of lead layers is provided on the insulating layers. Each lead layer has an overlay section extending over the insulating layer and the laminate. The edge of the overlay section is in direct contact with the central portion of the laminate.

Abstract: A CPP type magnetic sensing element capable of properly performing magnetization control of a free magnetic layer and having small hysteresis and an excellent playback characteristic, as well as a manufacturing method therefor, are provided. Second antiferromagnetic layers are provided not only on both edge sections of the free magnetic layer, but also on the middle rear end. In the height-side edge of the middle front end of the aforementioned free magnetic layer, a sense current magnetic field in the direction opposite to the magnetization direction of the aforementioned free magnetic layer is cancelled by a bias magnetic field from the second antiferromagnetic layer provided on the middle rear end. Consequently, an influence of the aforementioned sense current magnetic field can be reduced, turbulence in the magnetization of the aforementioned free magnetic layer can be made smaller than ever, and a magnetic sensing element having small hysteresis can be manufactured.

Abstract: A magnetic sensing element is provided in which the magnetization of a pinned magnetic layer is pinned by a uniaxial anisotropy of the pinned magnetic layer itself. A nonmagnetic layer for increasing the coercive force of the pinned magnetic layer is disposed adjacent to the pinned magnetic layer at the opposite side of a nonmagnetic conductive layer. Specifically, the nonmagnetic layer is composed of, for example, Cu. In addition, the thickness of the nonmagnetic layer is adequately controlled.

Abstract: A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invention, the crystal grain boundaries formed in an antiferromagnetic layer (PtMn alloy film) and the crystal grain boundaries formed in a ferromagnetic layer are made discontinuous in at least a portion of the interface between both layers. As a result, the antiferromagnetic layer can be appropriately transformed to an ordered lattice by heat treatment to obtain a larger exchange coupling magnetic field than a conventional element.

Abstract: Disclosed are a CPP magnetic sensing element employing the exchange bias method in which a sensing current is prevented from expanding in the track width direction in the multilayer film while the magnetization of the free magnetic layer is controlled properly, side reading is effectively prevented, and read output is improved, and a method for fabricating the same. First insulating layers are disposed at both sides in the track width direction of a multilayer film, a second free magnetic layer is disposed over the multilayer film and the first insulating layers, and second antiferromagnetic layers are disposed on both side regions of the second free magnetic layer.

Abstract: A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 ?. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (?R/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

Abstract: A spin-valve type magnetoresistive sensor with a bias structure enabling a magnetization direction of a free magnetic layer to be uniformly arranged with certainty. The spin-valve type magnetoresistive sensor comprises an antiferromagnetic layer; a pinned magnetic layer having a magnetization direction made stationary; a nonmagnetic electrically conductive layer formed between the pinned magnetic layer and a free magnetic layer; soft magnetic layers that are arranged on the free magnetic layer while a spacing corresponding to a track width is left between the soft magnetic layers and that fill recesses in the free magnetic layer on both sides of an area corresponding to the track width; bias layers formed on the soft magnetic layers; and electrically conductive layers. The antiferromagnetic layer and the bias layers are each made of an alloy containing at least one or more elements selected from among Pt, Pd, Rh, Ru, Ir, Os, Au, Ag, Cr, Ni, Ne, Ar, Xe and Kr, as well as Mn.

Abstract: A seed layer having a chromium content in the range of 35 to 60 atomic percent and a thickness of 10 to 200 ? is deposited to have a single phase of the face-centered cubic structure by optimizing the sputtering conditions, etc. The surface of the seed layer maintaining the face-centered cubic structure exhibits improved wettability, and the rate of change in resistance ?R/R can thereby be improved.

Abstract: A method for manufacturing magnetic sensing elements for use in magnetic sensors and hard disks. A ferromagnetic layer and a second antiferromagnetic layer are deposited on a nonmagnetic layer having a uniform thickness. The second antiferromagnetic layer is milled to form an indent. The resulting magnetic sensing element has a free magnetic layer reliably set in a single-magnetic-domain state in the track width direction.

Abstract: A specular layer and a nonmagnetic layer are provided on a central portion of a free magnetic layer, and ferromagnetic layers and second antiferromagnetic layers are provided on both end portions of the free magnetic layer. In the present invention, the total thickness of the specular layer and the nonmagnetic layer can be decreased, and thus ion milling for removing the layers from both end portions of the free magnetic layer can be performed with low energy. Therefore, both end portions of the free magnetic layer are less damaged by ion milling, and ferromagnetic coupling produced between both end portions of the free magnetic layer and the ferromagnetic layers can be increased, thereby permitting appropriate control of magnetization of the free magnetic layer.