Abstract: A method which especially can safely produce a hypobromous acid or a water-soluble salt thereof, that does not require expensive equipment or the like, does not involve extra work such as pre-mixing or have restrictions such as producing immediately prior to use, and is simple. Further, a method which can efficiently and rapidly form a hypobromous acid or a water-soluble salt thereof which is stable and has high sterilization/anti-microbial effect, and which does not form harmful bromic acid. At least either a hypobromous acid or a water-soluble salt thereof is formed by reacting at least either a hypochlorous acid or a water-soluble salt thereof with a bromide in a liquid to be treated, wherein the at least either hypobromous acid a water-soluble salt thereof is formed by adding a modified chlorite to the liquid to be treated.

Abstract: A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening reaching at least a surface of the insulating substrate is formed in the source electrode, the GaN layer and the n-type AlGaN layer. Then, a nickel (Ni) layer is formed in the opening. Thereafter, by conducting dry etching from the back side while making the nickel (Ni) layer serve as an etching stopper, a via hole reaching the nickel (Ni) layer is formed in the insulating substrate. Then, a via wiring is formed extending from an inside the via hole to the back surface of the insulating substrate.

Abstract: A light source device includes a solid light emitting element 1 having a reflection film on the back side, first and second reflection surfaces 2, 3 opposing each other in parallel and substantially perpendicular to a front surface of the solid light emitting element 1 and a third reflection surface 4 substantially perpendicular to the first and second reflection surfaces 2, 3 and opposing the front surface of the solid light emitting element 1. The third reflection surface 4 is inclined to the front surface of the solid light emitting element 1. The reflection film of the element 1, the first, second and third reflection surfaces 2, 3, 4 do constitute a closed polyhedron having an emission opening 5 smaller than a light emitting surface of the element 1. Light emitted from the element 1 is emitted to an outside through the emission opening 5.

Abstract: An engine valve, formed of a titanium alloy, enables improvement of reliability and productivity while improving creep resistance and fatigue strength at a high temperature. The engine valve, including a stem section and a bevel section provided at one end of the stem section, is integrally formed of the titanium alloy. A portion of the valve, extending from the bevel section to a medial portion of the valve stem, is formed mainly of a needle-like crystallographic texture. Another portion of the valve, extending from the medial section to the other end of the stem section, is formed of a material having a substantially equiaxed crystallographic texture. A boundary between the needle-like texture and the equiaxed texture is provided in a range of sliding movement of the valve relative to a valve guide that slidably guides the stem section within the cylinder head.

Abstract: An information processing system includes a first information processing apparatus and a second information processing apparatus. The first information processing apparatus includes storing means configured to store a predetermined content or predetermined software, acquiring means configured to acquire the predetermined content or the predetermined software, and transmitting means configured to transmit the acquired predetermined content or the acquired predetermined software.

Abstract: An engine valve, formed of a titanium alloy, enables improvement of reliability and productivity while improving creep resistance and fatigue strength at a high temperature. The engine valve, including a stem section and a bevel section provided at one end of the stem section, is integrally formed of the titanium alloy. A portion of the valve, extending from the bevel section to a medial portion of the valve stem, is formed mainly of a needle-like crystallographic texture. Another portion of the valve, extending from the medial section to the other end of the stem section, is formed of a material having a substantially equiaxed crystallographic texture. A boundary between the needle-like texture and the equiaxed texture is provided in a range of sliding movement of the valve relative to a valve guide that slidably guides the stem section within the cylinder head.

Abstract: An application development supporting apparatus and method that make it possible to generate a GUI application, freely altering the settings for graphical representation corresponding to devices, are provided. A configuration in which the logical part and the graphics representation part of each component set in a graphical user interface (GUI) are configured separately, and a GUI component is generated based on the logical part and the graphics representation part is adopted. Through the present configuration, it becomes possible to easily construct a GUI adapted to a device by sharing the logical part among various devices, and selecting different graphics representation parts, in which various representation modes are set, depending on the device.

Abstract: An application development supporting apparatus and method that make it possible to easily set and execute various animation representations according to a state of a GUI component are provided. A GUI component is generated based on a logical part and a graphics representation part, and the graphics representation part is made to have an animation execution function based on image files according to the state of the component. By reading and displaying pre-set image data from an image file in accordance with methods that is carried out by a class of a graphics representation component, it becomes possible to carry out various animations with an image that is set according to the state of the component.

Abstract: There can be presented a letter input apparatus and method which make it possible to speedily and easily select a necessary letter from many kinds of letters while using a control dial input apparatus. By providing a control dial input apparatus 11 for generating command signals for forward direction and backward direction revolutions and a press-down, a microcomputer 12 for controlling a letter to be displayed based on the command signals, an OSD controller 13 for generating image information out of letter information and a display unit for displaying the generated image information, selection is conducted by moving a one dimensional cursor with a step for selecting one group of letters arranged and displayed in two dimensional fashion and a step for selecting a letter from the selected group of letters.

Abstract: A first surface layer made of compound semiconductor material is defined in a surface area of a substrate. A first intermediate layer is formed on the surface layer, the first intermediate layer being made of compound material having Ga as a III group element and S as a VI element and having a thickness of at least two monolayers or thicker. A first electrode is formed on the first intermediate layer, being electrically connected to the first surface layer with an ohmic contact.

Abstract: An undoped GaAs layer and a GaAs active layer are formed on a GaAs semiconductor substrate in that order, and a surface of the GaAs active layer is inactivated. Thereafter, a wafer composed of the GaAs semiconductor substrate, the undoped G&As layer and the GaAs active layer is annealed at temperatures ranging from 570 to 580.degree. C. in a molecular beam epitaxy apparatus. Thereafter, the wafer is maintained at temperatures ranging from 350 to 500.degree. C., and an insulating layer made of amorphous GaAs is formed on the GaAs active layer while using tertiary-butyl-gallium-sulfide-cubane "((t-Bu)GaS).sub.4 " as a source of the insulating layer. Thereafter, the insulating layer is patterned according to a photo-lithography method to form a gate insulating layer on the GaAs active layer.

Abstract: A semiconductor device is fabricated by the step of forming a gate insulation film of a GaS film on a compound semiconductor layer; the step of forming an inter-layer insulation film on the gate insulation film; the step of etching the inter-layer insulation film selectively with respect to the gate insulation film by the use of an etchant containing hydrogen fluoride and ammonium fluoride, the step of exposing a prescribed region of the gate insulation film; and the step of forming a gate electrode on the exposed gate insulation film.

Abstract: An undoped GaAs layer and a GaAs active layer are formed on a GaAs semiconductor substrate in that order, and a surface of the GaAs active layer is inactivated. Thereafter, a wafer composed of the GaAs semiconductor substrate, the undoped GaAs layer and the GaAs active layer is annealed at temperatures ranging from 570 to 580.degree. C. in a molecular beam epitaxy apparatus. Thereafter, the wafer is maintained at temperatures ranging from 350 to 500.degree. C., and an insulating layer made of amorphous GaAs is formed on the GaAs active layer while using tertiary-butyl-gallium-sulfide-cubane "((t-Bu)GaS).sub.4 " as a source of the insulating layer. Thereafter, the insulating layer is patterned according to a photo-lithography method to form a gate insulating layer on the GaAs active layer.

Abstract: The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH.sub.2 I.sub.2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a highly p-type conductivity to a GaAs crystal layer, an InGaAs crystal layer or the like as an object of it, and includes a process of forming a p-type III-V system compound semiconductor layer as using a compound containing carbon (C) as a dopant material for giving a p-type conductivity and further containing iodine (I) and hydrogen (H) as impurity.

Abstract: The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH.sub.2 I.sub.2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a highly p-type conductivity to a GaAs crystal layer, an InGaAs crystal layer or the like as an object of it, and includes a process of forming a p-type III-V system compound semiconductor layer as using a compound containing carbon (C) as a dopant material for giving a p-type conductivity and further containing iodine (I) and hydrogen (H) as impurity.