Abstract: A semiconductor device includes a drift layer having a structure wherein a plurality of quantum dot layers each including a quantum dot containing InxGa1-xN (0?x?1) and a burying layer burying the quantum dot and containing n-type Inx(GayAl1-y)1-xN (0?x?1, 0?y?1) are stacked.

Abstract: A support device for supporting a cylindrical member around which is wound an elongated body has: a support shaft for supporting the cylindrical member that is fitted to an external surface of the support shaft from an opening on one end in a longitudinal direction of the cylindrical member; an anchoring plates, built into the support shaft, for anchoring the cylindrical member from an inner circumferential side of the cylindrical member; and an operating means having an operation shaft of a smaller diameter than the support shaft, the operation shaft protruding forward from a distal end of the support shaft in order to operate the anchoring plates. Further, the support device has a protecting member which is attached to the distal end of the support shaft and through which is inserted the operation shaft. The protecting member further has a reduced-diameter section smaller in diameter than the support shaft.

Abstract: A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film.

Abstract: A compound semiconductor device includes: a compound semiconductor layer; a protective insulating film that covers a top of the compound semiconductor layer; and a gate electrode formed on the protective insulating film, wherein the protective insulating film has a first trench and a second trench which is formed side by side with the first trench and in which the protective insulating film remains with only a predetermined thickness on the compound semiconductor layer, and wherein the gate electrode fills the first trench, and one end of the gate electrode is away from the first trench and located at least in the second trench.

Abstract: A compound semiconductor device includes: a compound semiconductor layer; a protective insulating film that covers a top of the compound semiconductor layer; and a gate electrode formed on the protective insulating film, wherein the protective insulating film has a first trench and a second trench which is formed side by side with the first trench and in which the protective insulating film remains with only a predetermined thickness on the compound semiconductor layer, and wherein the gate electrode fills the first trench, and one end of the gate electrode is away from the first trench and located at least in the second trench.

Abstract: A signal processor converts an input 3D image signal into a signal in which a left-eye signal and right-eye signal are rearranged temporally alternately. A driver of a liquid crystal display element includes a sub-frame data generator configuring all the sub-frames with step bit pulses and generating sub-frame data by using a drive gradation table in which the last sub-frame reaches a drive state when a drive gradation is “1” and the number of sub-frames reaching the drive state is increased one by one toward ahead of a sub-frame which has already reached the drive state, every time the drive gradation is increased by one. The liquid crystal display element is driven by the driver. An illumination optical system causes illumination light to enter into the liquid crystal display element. A projection lens projects modulated light emitted from the liquid crystal display element.

Abstract: A compound semiconductor device includes: an electron transit layer; an electron supply layer over the electron transit layer; a gate electrode, a source electrode and a drain electrode at a level above the electron supply layer; and a porous electrical insulating film that covers the gate electrode, the source electrode and the drain electrode, the porous electrical insulating film containing an organic constituent, and a cavity being formed around the gate electrode in the porous electrical insulating film. A cross-linking layer is on a surface of the porous electrical insulating film at the cavity side.

Abstract: A compound semiconductor device includes: an electron transit layer formed of a compound semiconductor; and an electrode formed so as to overlie the electron transit layer with an insulating film interposed between the electron transit layer and the electrode, wherein part of the electron transit layer below the electrode are formed such that a first compound semiconductor having a first polar face and a second compound semiconductor having a second polar face are alternately arranged, and polarization charges in the first polar face have opposite polarity to polarization charges in the second polar face.

Abstract: A semiconductor device includes: a first semiconductor layer which is formed over a substrate and is formed from a nitride semiconductor; a second semiconductor layer which is formed over the first semiconductor layer and is formed from a nitride semiconductor; a third semiconductor layer which is formed over the second semiconductor layer and is formed from a nitride semiconductor; a source electrode and a drain electrode which are formed over the third semiconductor layer; an opening which is formed in the second semiconductor layer and the third semiconductor layer between the source electrode and the drain electrode; an insulating layer which is formed on a side surface and a bottom surface of the opening; and a gate electrode which is formed in the opening through the insulating layer.

Abstract: A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has a shape riding on the compound semiconductor layer, wherein the protection film has a stacked structure of a lower insulating film not containing oxygen and an upper insulating film containing oxygen, and the opening includes a first opening formed in the lower insulating film and a second opening formed in the upper insulating film and wider than the first opening, the first opening and the second opening communicating with each other.

Abstract: An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode formed on the compound semiconductor layer so as to plug the opening. In the protective film, a projecting portion projecting from a side surface of the opening is formed at a lower layer portion 6a.

Abstract: A semiconductor device includes a semiconductor layer and a Schottky electrode, a Schottky junction being formed between the semiconductor layer and the Schottky electrode. The Schottky electrode includes a metal part containing a metal, a Schottky junction being formed between the semiconductor layer and the metal part; and a nitride part around the metal part, the nitride part containing a nitride of the metal, and a Schottky junction being formed between the semiconductor layer and the nitride part.

Abstract: A method of producing a semiconductor device includes forming an insulating film on a substrate on which a semiconductor layer is formed; removing a part of the insulating film by etching to form an opening in the insulating film; supplying steam with a temperature greater than or equal to 200° C. and less than or equal to 600° C. to the opening formed in the insulating film; after supplying the steam, applying a solution including a silicon compound to a side surface or the insulating film defining the opening; and forming a hydrophobic film on the side surface of the insulating film defining the opening by polymerizing the silicon compound.

Abstract: The present invention relates to an information processing device, an information processing method, and a program for easily acquiring information. A television receiver accesses an application server and acquires an application list therefrom. When an application is selected from the application list, the television receiver again accesses the application server and acquires the selected application therefrom. While executing a process based on the acquired application, the television receiver accesses a content server as needed and acquires content data therefrom. The acquired application and content data are deleted from a storage unit when an end of the process based on the application is designated. The present invention applies to television receivers which acquire data via a network.

Abstract: A semiconductor device is provided with: a GaN layer; an anode electrode that forms a Schottky junction with a Ga face of the GaN layer; and an InGaN layer positioned between at least a part of the anode electrode and the GaN layer.

Abstract: A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an insulating film formed directly on the gate electrode to cover at least one of the first and second sidewall surfaces, first and second ohmic electrodes formed on the first and second sides, respectively, a passivation film including a first portion extending from the first ohmic electrode toward the gate electrode to cover a surface area between the first ohmic electrode and the gate electrode and a second portion extending from the second ohmic electrode toward the gate electrode to cover a surface area between the second ohmic electrode and the gate electrode, wherein the insulating film is in direct contact with at least the first and second passivation film portions, and has a composition different from that of the passivation film.

Abstract: The influenced of condensed water on an EGR device is alleviated. A device (100) that controls a cooling system including adjusting means for being able to adjust a circulation amount of coolant in a first flow passage, including an engine cooling flow passage, an EGR cooling flow passage and a radiator flow passage, and a second flow passage, including the engine cooling flow passage, the EGR cooling flow passage and a bypass flow passage and not including the radiator flow passage, includes: measuring means for measuring a temperature of the coolant; limiting means for limiting circulation of the coolant at starting an internal combustion engine; and control means for circulating the coolant preferentially through the second flow passage via control over the adjusting means based on the Measured temperature in a period in which circulation of the coolant is limited.

Abstract: A semiconductor device includes a first semiconductor layer configured to be formed of a nitride semiconductor on a substrate; a second semiconductor layer configured to be formed of a nitride semiconductor on the first semiconductor layer; an insulation film configured to include an opening, and to be formed on the second semiconductor layer; a source electrode and a drain electrode configured to be formed on the second semiconductor layer; and a gate electrode configured to be formed at the opening on the second semiconductor layer. Both the insulation film and the second semiconductor layer include carbon in a neighborhood of an interface between the insulation film and the second semiconductor layer.

Abstract: Provided is a multi-projector system including: projectors; an image outputting apparatus; and an adjusting apparatus to adjust images. Each of the projectors includes: a light-emitting unit to emit the modulated light; and a color adjusting unit to adjust colors of the projected image. The image outputting apparatus includes an outputting unit to output the first adjustment image and the second adjustment image as the input images of the projectors. The adjusting apparatus includes: an imaging unit to take a projected image and to output a captured image; an analyzing unit to analyze an image of the overlapping area from the captured image so as to determine a color component; and a controller for controlling the color adjusting unit of the first projector so that the color of the overlapping area is an achromatic color in accordance with the color component determined as a result of the analysis.

Abstract: A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate; a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer; a gate trench formed in the second semiconductor layer or in the second and first semiconductor layers; a gate electrode formed at the gate trench; and a source electrode and a drain electrode formed on the second semiconductor layer. The gate trench has terminal parts of a bottom of the gate trench formed shallower than a center part of the bottom. A part of a sidewall of the gate trench is formed of a surface including an a-plain surface. The center part of the bottom is a c-plain surface. The terminal parts of the bottom form a slope from the c-plain surface to the a-plain surface.