Abstract: A substrate processing apparatus includes: a processing chamber; a substrate holder that is disposed in the processing chamber and holds a substrate; a processing liquid supply that supplies a processing liquid to the substrate held in the substrate holder; an infrared camera that acquires an infrared image of the processing chamber; and a controller that detects at least a state of the processing liquid based on the infrared image and monitors presence/absence of an abnormality.

Abstract: A substrate processing apparatus includes: a processing chamber; a substrate holder that is disposed in the processing chamber and holds a substrate; a processing liquid supply that supplies a processing liquid to the substrate held in the substrate holder; an infrared camera that acquires an infrared image of the processing chamber; and a controller that detects at least a state of the processing liquid based on the infrared image and monitors presence/absence of an abnormality.

Abstract: Embodiments of the invention provide a method for treating a microelectronic substrate with dilute TMAH. In the method, a microelectronic substrate is received into a process chamber, the microelectronic substrate having a layer, feature or structure of silicon. A treatment solution is applied to the microelectronic substrate to etch the silicon, where the treatment solution includes a dilution solution and TMAH. A controlled oxygen content is provided in the treatment solution or in an environment in the process chamber to achieve a target etch selectivity of the silicon, or a target etch uniformity across the layer, feature or structure of silicon, or both by the treatment solution.

Abstract: Embodiments of the invention provide a method for treating a microelectronic substrate with dilute TMAH. In the method, a microelectronic substrate is received into a process chamber, the microelectronic substrate having a layer, feature or structure of silicon. A treatment solution is applied to the microelectronic substrate to etch the silicon, where the treatment solution includes a dilution solution and TMAH. A controlled oxygen content is provided in the treatment solution or in an environment in the process chamber to achieve a target etch selectivity of the silicon, or a target etch uniformity across the layer, feature or structure of silicon, or both by the treatment solution.

Abstract: Disclosed is a substrate processing apparatus (a substrate processing method, and a computer readable storage medium having a substrate processing program stored therein) of cleaning an etched substrate with a polymer removing liquid, in which any of isopropyl alcohol vapor, water vapor, deionized water and isopropyl alcohol, ammonia water, and ammonia water and isopropyl alcohol is supplied to the substrate before the substrate is cleaned with the polymer removing liquid.

Abstract: A turbine according to an embodiment includes: a formation object member; a facing member; and a seal part. A formation object member is one of a static part and a rotation part. A facing member is the other of the static part and the rotation part. A seal part at the formation object member is configured to reduce combustion gas leaking between the formation object member and the facing member. The seal part including a ceramics layer. The ceramics layer has a heat conductivity lower than that of the formation object member, and has a concave and convex shape at a surface thereof. The ceramics layer is not in contact with the facing member, or has hardness higher than that of the facing member so that the facing member is preferentially abraded when the facing member and the ceramics layer are in contact with each other.

Abstract: A single-flow turbine using CO2 as a working fluid. The turbine includes a balance piston portion configured to optimize an axial load of a rotor on a bearing with a fluid having a temperature lower than a temperature of the working fluid introduced into the turbine, wherein a flow path in which at least a part of the fluid passing through the balance piston portion is extracted from a middle part of the passing, and in which at least a part of the extracted fluid is urged to flow to a middle part of a passage where the working fluid passes and where rotor blades at a plurality of stages are provided, is formed at the turbine.

Abstract: In one embodiment, a turbine using CO2 includes moving blades, stator blades, a working fluid transport flow path, a coolant transport flow path, and a coolant recovery flow path. The stator blades constitute turbine stages together with the moving blades. The working fluid transport flow path is configured to transport the working fluid sequentially to the turbine stages. The coolant transport flow path is configured to transport the coolant by allowing the coolant to sequentially pass through the inside of the stator blades from an upstream to a downstream of the working fluid. The coolant recovery flow path is configured to recover the coolant passing through the inside of the stator blade at a predetermined turbine stage and merge the recovered coolant with the working fluid transport flow path at a turbine stage on an upstream side of the predetermined turbine stage.

Abstract: Disclosed is a substrate processing apparatus (a substrate processing method, and a computer readable storage medium having a substrate processing program stored therein) of cleaning an etched substrate with a polymer removing liquid, in which any of isopropyl alcohol vapor, water vapor, deionized water and isopropyl alcohol, ammonia water, and ammonia water and isopropyl alcohol is supplied to the substrate before the substrate is cleaned with the polymer removing liquid.

Abstract: A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

Abstract: A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

Abstract: There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.

Abstract: In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved.

Abstract: According to one embodiment, there is provided a single-flow turbine using CO2 as a working fluid. The turbine includes a balance piston portion configured to optimize an axial load of a rotor on a bearing with a fluid having a temperature lower than a temperature of the working fluid introduced into the turbine, wherein a flow path in which at least a part of the fluid passing through the balance piston portion is extracted from a middle part of the passing, and in which at least a part of the extracted fluid is urged to flow to a middle part of a passage where the working fluid passes and where rotor blades at a plurality of stages are provided, is formed at the turbine.

Abstract: A turbine according to an embodiment includes: a formation object member; a facing member; and a seal part. A formation object member is one of a static part and a rotation part. A facing member is the other of the static part and the rotation part. A seal part at the formation object member is configured to reduce combustion gas leaking between the formation object member and the facing member. The seal part including a ceramics layer. The ceramics layer has a heat conductivity lower than that of the formation object member, and has a concave and convex shape at a surface thereof. The ceramics layer is not in contact with the facing member, or has hardness higher than that of the facing member so that the facing member is preferentially abraded when the facing member and the ceramics layer are in contact with each other.

Abstract: In one embodiment, a turbine using CO2 includes moving blades, stator blades, a working fluid transport flow path, a coolant transport flow path, and a coolant recovery flow path. The stator blades constitute turbine stages together with the moving blades. The working fluid transport flow path is configured to transport the working fluid sequentially to the turbine stages. The coolant transport flow path is configured to transport the coolant by allowing the coolant to sequentially pass through the inside of the stator blades from an upstream to a downstream of the working fluid. The coolant recovery flow path is configured to recover the coolant passing through the inside of the stator blade at a predetermined turbine stage and merge the recovered coolant with the working fluid transport flow path at a turbine stage on an upstream side of the predetermined turbine stage.

Abstract: In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid. Thereafter, a gas nozzle moves from the position corresponding to the central portion to the position corresponding to the peripheral edge portion while supplying an inert gas.

Abstract: In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid. Thereafter, a gas nozzle moves from the position corresponding to the central portion to the position corresponding to the peripheral edge portion while supplying an inert gas.

Abstract: In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved.

Abstract: There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.