Abstract: The present disclosure relates to a solid-state imaging device, an electronic apparatus, and a manufacturing method that are designed to further increase conversion efficiency. A solid-state imaging device includes a pixel in which element separation is realized by a first trench element separation region having a trench structure in a region between an FD unit and an amplifying transistor among element separation elements separating the elements constituting the pixel from one another, and a second trench element separation region having a trench structure in a region other than the region between the FD unit and the amplifying transistor among the element separation regions separating the elements constituting the pixel from one another, and the first trench element separation region is deeper than the second trench element separation region. The present technology can be applied to CMOS image sensors, for example.

Abstract: There is provided a display control device to provide a technique that enables a user to easily specify an application as an operation target, the display control device including: an output control unit configured to control an output unit so as to display a display object associated with one application or each of multiple applications; an action detection unit configured to detect a finger pointing direction of a user; and an application selection unit configured to select an application as an operation target based on the display object associated with the one application or each of the multiple applications and the finger pointing direction.

Abstract: [Object] To make it possible to further improve convenience for users. [Solution] There is provided an information processing device including: a user information management unit configured to set a user in a window in which an operation screen of an application is displayed and grant at least one of execution authority of the application set in the window according to the user and browsing authority of content in the window to the window.

Abstract: A digital television (DTV) operating screen is displayed on the cathode ray tube (CRT) display screen of a DTV which is the controlling apparatus of a network. In the event that the user selects a digital video home system (DVHS) from the buttons displayed on the DTV operating screen, data corresponding to the DVHS operation screen is input to the DTV, and a DVHS operation screen is displayed on the CRT display screen 61. The user operation instructions executed regarding the DVHS operation screen are notified from the digital television DTV to the DVHS, so the DTV can execute control corresponding to the operations of the user, without transmitting commands for directly controlling the DVHS.

Abstract: The present disclosure relates to a solid-state imaging device capable of further decreasing reflectivity, a method of manufacturing the same, and an electronic device. The solid-state imaging device includes a semiconductor substrate on which a photoelectric converting unit is formed for each of a plurality of pixels, and an antireflection structure provided on a light incident surface side from which light is incident on the semiconductor substrate in which a plurality of types of projections of different heights is formed. The antireflection structure is formed by performing processing of digging a light incident surface of the semiconductor substrate in a plurality of stages with different processing conditions. The antireflection structure is the structure in which a second projection lower than a first projection is formed between the first projections of predetermined height. The present technology may be applied to a CMOS image sensor, for example.

Abstract: There is provided a display control device, an information processing device, an information processing method, and a program capable of presenting information in a suitable mode according to a positional relationship between a display region and a user, the display control device including: a calculation unit configured to specify a first region in which a user is a reference point; and a display control unit configured to control display of a display object on a display unit according to the specified first region and a second region occupied by the display unit.

Abstract: The present disclosure relates to a solid-state imaging element and an electronic device capable of suppressing occurrence of a dark current and acquiring higher image quality. The solid-state imaging element includes a high-concentration diffusion layer configured to serve as a connection portion by which a wiring is connected to a semiconductor substrate, and a junction leak control film formed to cover a surface of the diffusion layer. Also, to connect the wiring to the diffusion layer, a width of an opening formed in an insulation film stacked on the semiconductor substrate is greater than a width of the diffusion layer. Further, in a charge accumulation portion configured to accumulate a charge generated by a photoelectric conversion portion generating the charge according to an amount of received light, the junction leak control film is also used as a capacitor film of the charge accumulation portion.

Abstract: There is provided an information processing apparatus including: a search unit that searches for an apparatus, which is suitable for providing event notification, when event generation is detected; and a supply unit that supplies notification content to the apparatus which is found by the search unit.

Abstract: There is provided an information processing apparatus including: a search unit that searches for an apparatus, which is suitable for providing event notification, when event generation is detected; and a supply unit that supplies notification content to the apparatus which is found by the search unit. The search unit is configured to issue a response request for responding to a search target apparatus in an event a third condition, which includes a first condition relevant to display of a privacy information and a second condition relevant to whether or not a user notices the notification, is satisfied.

Abstract: [Object] To propose a novel and improved transmission apparatus, relay apparatus, and reception apparatus that have improved quick response performance involved in content processing. [Solution] According to the present disclosure, there is provided a transmission apparatus including: a storage unit configured to store first encoded data used for playback at first quality and second encoded data used for playback at second quality higher than the first quality, for same temporally continuous content; and a communication unit configured to transmit the first encoded data to a reception apparatus, and thereafter, receive first position information relating to a data position from the reception apparatus, and transmit a portion of the second encoded data corresponding to the first position information to the reception apparatus.

Abstract: The present disclosure relates to a solid-state imaging element and an electronic device capable of suppressing occurrence of a dark current and acquiring higher image quality. The solid-state imaging element includes a high-concentration diffusion layer configured to serve as a connection portion by which a wiring is connected to a semiconductor substrate, and a junction leak control film formed to cover a surface of the diffusion layer. Also, to connect the wiring to the diffusion layer, a width of an opening formed in an insulation film stacked on the semiconductor substrate is greater than a width of the diffusion layer. Further, in a charge accumulation portion configured to accumulate a charge generated by a photoelectric conversion portion generating the charge according to an amount of received light, the junction leak control film is also used as a capacitor film of the charge accumulation portion.

Abstract: The present disclosure relates to a solid-state imaging device, an electronic apparatus, and a manufacturing method that are designed to further increase conversion efficiency. A solid-state imaging device includes a pixel in which element separation is realized by a first trench element separation region having a trench structure in a region between an FD unit and an amplifying transistor among element separation elements separating the elements constituting the pixel from one another, and a second trench element separation region having a trench structure in a region other than the region between the FD unit and the amplifying transistor among the element separation regions separating the elements constituting the pixel from one another, and the first trench element separation region is deeper than the second trench element separation region. The present technology can be applied to CMOS image sensors, for example.

Abstract: The present disclosure relates to a solid-state imaging element and an electronic device capable of suppressing occurrence of a dark current and acquiring higher image quality. The solid-state imaging element includes a high-concentration diffusion layer configured to serve as a connection portion by which a wiring is connected to a semiconductor substrate, and a junction leak control film formed to cover a surface of the diffusion layer. Also, to connect the wiring to the diffusion layer, a width of an opening formed in an insulation film stacked on the semiconductor substrate is greater than a width of the diffusion layer. Further, in a charge accumulation portion configured to accumulate a charge generated by a photoelectric conversion portion generating the charge according to an amount of received light, the junction leak control film is also used as a capacitor film of the charge accumulation portion.

Abstract: A content server provides content to a first network device during a data synchronization between the two devices. A middleware filter selectively filters content provided by the content server such that selected content is provided to the first network device. The middleware filter is included within a second network device coupled between the content server and the first network device. The second network device acts as a proxy for the first network device to receive the content provided by the content server. The content is provided from the content server according to a subscription service between the content server and the first network device. The first network device is preferably a personal digital assistant (PDA) and the second network device is preferably a personal computer. Alternatively, the content server is coupled to the first network device, without the second network device coupled in between.

Abstract: A solid-state imaging device according to the present disclosure includes: a semiconductor base; a photoelectric conversion element provided in the semiconductor base; a photoelectric conversion film arranged on a light receiving surface side of the semiconductor base; a contact section to which a signal charge generated in the photoelectric conversion film is read, the contact section being provided in the semiconductor base; a first film member covering the photoelectric conversion element; and a second film member provided on the contact section.

Abstract: The present disclosure relates to a solid-state imaging element and an electronic device capable of suppressing occurrence of a dark current and acquiring higher image quality. The solid-state imaging element includes a high-concentration diffusion layer configured to serve as a connection portion by which a wiring is connected to a semiconductor substrate, and a junction leak control film formed to cover a surface of the diffusion layer. Also, to connect the wiring to the diffusion layer, a width of an opening formed in an insulation film stacked on the semiconductor substrate is greater than a width of the diffusion layer. Further, in a charge accumulation portion configured to accumulate a charge generated by a photoelectric conversion portion generating the charge according to an amount of received light, the junction leak control film is also used as a capacitor film of the charge accumulation portion.

Abstract: There is provided an information processing apparatus including: a search unit that searches for an apparatus, which is suitable for providing event notification, when event generation is detected; and a supply unit that supplies notification content to the apparatus which is found by the search unit.

Abstract: There is provided an information processing apparatus, including an information acquisition section which acquires display information, and a first display section which displays the display information. A display of the display information is controlled for the first display section, in accordance with a relative positional relationship between the first display section and a second display section provided in an external apparatus, based on at least one of a control of a display destination of the display information between the first display section and the second display section, and a control of a layout of the display information displayed on the first display section.

Abstract: The present technology relates to an information processing apparatus, mobile terminal, information processing method, program, and information processing system that can make it possible to easily link information output by a certain device to information output by another device.

Abstract: Disclosed herein is a solid-state imaging device including: a photoelectric conversion section configured to have a charge accumulating region of a first conductivity type formed in a semiconductor layer; a pixel having the photoelectric conversion section and a pixel transistor; a pixel region in which a plurality of the pixels are arranged; an epitaxially grown semiconductor layer of the first conductivity type formed on an inner wall part of a trench disposed in the semiconductor layer at least between adjacent ones of the pixels within the pixel region; and a pixel separating section configured to separate the charge accumulating regions of the adjacent ones of the pixels from each other, the pixel separating section being formed on the inside of the semiconductor layer of the first conductivity type.