Abstract: A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

Abstract: A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in response to the gate voltage; an active layer provided adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor including magnesium and indium as major components; and a gate insulating layer provided between the gate electrode and the active layer.

Abstract: A field-effect transistor includes a gate electrode, a source electrode and a drain electrode to take out electric current according to an application of a voltage to the gate electrode, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, the semiconductor layer forming a channel between the source electrode and the drain electrode, a first insulating layer as gate insulating film disposed between the semiconductor layer and the gate electrode, and a second insulating layer covering at least a part of a surface of the semiconductor layer, the second insulating layer including an oxide including silicon and alkaline earth metal.

Abstract: A field-effect transistor includes a gate electrode to apply a gate voltage, a source electrode and a drain electrode to take electric current out, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements.

Abstract: The present invention aims to maximally reduce a projecting width of a projecting part formed on a terminal when the terminal is crimped to an exposed core part of an end part of a wire. To achieve this aim, a method for producing a terminal-equipped wire in which a crimping portion of a terminal is crimped to an exposed core part of an end part of a wire includes a) a step of arranging the exposed core part in the crimping portion, b) a step of sandwiching a part of the crimping portion between a lower die surface of a lower die and an upper die surface of an upper die and crimping the part of the crimping portion to the exposed core part, and c) a step of pressing an end part of the crimping portion protruding from the upper die surface from above.

Abstract: A field-effect transistor including: a gate electrode; a source electrode and a drain electrode; an active layer disposed to be adjacent to the source electrode and the drain electrode and including a n-type oxide semiconductor; and a gate insulating layer disposed between the gate electrode and the active layer, wherein the n-type oxide semiconductor undergoes substitutional doping with at least one dopant selected from divalent, trivalent, tetravalent, pentavalent, hexavalent, heptavalent, and octavalent cations, valence of the dopant is greater than valence of a metal ion constituting the n-type oxide semiconductor, provided that the dopant is excluded from the metal ion, and the source electrode and the drain electrode include a material selected from Au, Pt, and Pd and alloys including at least any one of Au, Pt, and Pd, in at least contact regions of the source electrode and the drain electrode with the active layer.

Abstract: A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer formed between the substrate and the passivation layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first complex oxide containing an alkaline earth metal and a rare-earth element, and wherein the gate insulating layer contains a second complex oxide containing an alkaline earth metal and a rare-earth element.

Abstract: To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.

Abstract: A nozzle plate for a liquid droplet discharge head to discharge a charged liquid droplet, includes a discharge port disposed on a nozzle face; a discharge chamber filled with liquid to be discharged from the discharge port; a nozzle hole extending from the discharge port in a thickness direction of the nozzle plate and communicating with the discharge chamber; a first electrode disposed at either the discharge chamber or the nozzle hole and contacting part of the liquid droplet; and a second electrode disposed on the nozzle face and neither connecting to the first electrode nor contacting the liquid droplet.

Abstract: A nozzle plate having a nozzle hole that penetrates through the nozzle plate in a thickness direction is disclosed. The nozzle plate includes a discharge outlet that is formed at the nozzle hole, and provided curvatures of four corner portions of an opening shape of the discharge outlet are denoted as R1, R2, R3, and R4, the opening shape of the discharge outlet is configured to approximate the equation R1=R2?R3=R4?0.

Abstract: A nozzle plate for a liquid droplet discharge head to discharge a charged liquid droplet, includes a discharge port disposed on a nozzle face; a discharge chamber filled with liquid to be discharged from the discharge port; a nozzle hole extending from the discharge port in a thickness direction of the nozzle plate and communicating with the discharge chamber; a first electrode disposed at either the discharge chamber or the nozzle hole and contacting part of the liquid droplet; and a second electrode disposed on the nozzle face and neither connecting to the first electrode nor contacting the liquid droplet.

Abstract: A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

Abstract: A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent.

Abstract: To provide a field-effect transistor, containing: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, both of which are configured to take out electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein work function of the source electrode and drain electrode is 4.90 eV or greater, and wherein an electron carrier density of the n-type oxide semiconductor is 4.0×1017 cm?3 or greater.

Abstract: To provide a coating liquid for forming a metal oxide film, containing: an indium compound; at least one selected from the group consisting of a magnesium compound, a calcium compound, a strontium compound, and a barium compound; at least one selected from the group consisting of a compound containing a metal a maximum positive value of an oxidation number of which is IV, a compound containing a metal a maximum positive value of an oxidation number of which is V, and a compound containing a metal a maximum positive value of an oxidation number of which is VI; and an organic solvent.

Abstract: A field-effect transistor, including: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode configured to take out electric current; an active layer formed of a n-type oxide semiconductor, and provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor includes at least one selected from the group consisting of Re, Ru, and Os as a dopant.

Abstract: To provide a field-effect transistor, containing: a substrate; a protective layer; a gate insulating layer formed between the substrate and the protective layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is formed at an opposite side to the side where the semiconductor layer is provided, with the gate insulating layer being between the gate electrode and the semiconductor layer, and is in contact with the gate insulating layer, wherein the protective layer contains a metal oxide composite, which contains at least Si and alkaline earth metal.

Abstract: A terminal crimping device includes a one-sided braking unit for braking a movement of a series terminal. The one-sided braking unit includes a main body portion arranged to face the series terminal and a supporting portion for pivotably supporting the main body portion. A pivot axis of the main body portion is located upstream of a reference plane in a feed direction if a surface of the main body portion facing the series terminal is referred to as a facing surface and a virtual plane passing through a contact position of the facing surface with the series terminal and extending along a direction normal to a stage is referred to as the reference plane.

Abstract: A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

Abstract: A disclosed field effect transistor includes a gate electrode to which a gate voltage is applied, a source electrode and a drain electrode for acquiring a current in response to the gate voltage, an active layer provided adjacent to the source electrode and the drain electrode, the active layer being formed of an n-type oxide semiconductor, and a gate insulator layer provided between the gate electrode and the active layer. In the field effect transistor, the n-type oxide semiconductor is formed of an n-type doped compound having a chemical composition of a crystal phase obtained by introducing at least one of a trivalent cation, a tetravalent cation, a pentavalent cation and a hexavalent cation.