Abstract: An audio reproducing apparatus includes: a decoding module configured to perform a decoding process on a digital broadcast signal demodulated by a demodulating module and generate an audio signal; a generating module configured to generate suspension audio data based on the audio signal of a first given time period, the audio signal being output from the decoding module; a switching module configured to switch a source of the audio signal to be output from the audio output module between the decoding module and a storage module; and a control module configured to control the switching module to switch the source to the storage module for causing an audio output module to output selected suspension audio data to be faded-out when a suspension of the decoding by the decoding module is occurred, the selected suspension audio data being the suspension audio data stored immediately before the suspension.

Abstract: According to one embodiment, an electronic apparatus includes a speaker, a terminal, an amplifier, a power supply circuit, and a first controller. The terminal is configured to input an audio signal from an external apparatus. The amplifier is configured to amplify the audio signal which is input from the terminal, and to output sound from the speaker. The power supply circuit is configured to supply power to the amplifier. The first controller is configured to control the power supply circuit in order to continue the supply of power to the amplifier, if the external apparatus is connected to the terminal when the electronic apparatus transitions from a operative state to a non-operative state.

Abstract: To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial wafer according to the present invention includes: an oxide film forming step in which an oxide film is formed on a back surface thereof; an etching step in which a hydrophobic portion exposing a back surface of the semiconductor wafer is provided by partially removing the oxide film; a wafer placing step in which the semiconductor wafer is placed; and an epitaxial growth step in which an epitaxial layer is grown on a main surface of the semiconductor wafer; and the diameter of the lift pin installation circle provided on a circle on a bottom face of a susceptor is smaller than that of the hydrophobic portion.

Abstract: Since vapor-phase growth of an epitaxial film is performed on the surface of a mirror surface silicon wafer which is not subjected to final polishing, and the surface of the epitaxial film is thereafter subjected to HCl gas etching, the mirror polishing step is simplified, and the productivity is improved, that enables a reduction in cost, and it is possible to suppress the surface roughness of the epitaxial film as well.

Abstract: In a nonaqueous electrolyte secondary battery in which an electrode plate group including a positive electrode plate and a negative electrode plate which have a positive electrode mixture layer formed on a positive electrode current collector to contain a positive electrode active material and a negative electrode mixture layer formed on a negative electrode current collector to contain a negative electrode active material, respectively, and are spirally wound or stacked with a separator interposed therebetween is encapsulated in a battery exterior packaging body with an electrolyte, the battery exterior packaging body includes a gas releasing valve for releasing gas in the battery exterior packaging body to the outside when a gas pressure in the battery exterior packaging body reaches a working pressure and is formed to be deformable where the gas pressure in the battery exterior packaging body is lower than the working pressure of the gas releasing valve.

Abstract: A video display device includes: a connection detecting module configured to detect whether a shutter glasses is connected to the device; a generation module configured to generate a second frame, which is alternately displayed with a first frame included in a video content, by adding an irregular pattern to an image viewed in a predetermined color when the connection detecting module detects that the shutter glasses is connected; a display unit configured to display the video content; a video display controller configured to control the display unit to alternately display the first frame and the second frame; and a shutter glasses controller configured to control the shutter glasses to close shutters in synchronization with the time for displaying the second frame.

Abstract: The present invention mainly relates to non-aqueous electrolyte secondary batteries. The present invention intends to provide a non-aqueous electrolyte secondary battery having excellent cycle characteristics and excellent storage characteristics. The non-aqueous electrolyte secondary battery of the present invention includes a positive electrode including a positive electrode active material, a negative electrode including a negative electrode active material, a separator interposed between the positive electrode and the negative electrode, and a non-aqueous electrolyte. The positive electrode active material includes secondary particles each being an aggregate of a plurality of primary particles, and the primary particles have an average particle diameter of 0.8 ?m or less. The secondary particles each contain aluminum atoms, and the content of the aluminum atoms is larger in a portion near the surface of each of the secondary particles than in a portion near the center of each of the secondary particles.

Abstract: An object of the invention is to calibrate an upper pyrometer for indirectly measuring a substrate temperature at the time of epitaxial growth in a comparatively short time and with accuracy to thereby improve the quality of an epitaxial substrate. After calibrating an upper pyrometer by a thermocouple mounted to a temperature calibrating susceptor, a measured value of a lower pyrometer is adjusted to a calibrated value of the upper pyrometer. Then, a correlation line between substrate temperature indirectly measured by the upper pyrometer at the time of epitaxial growth onto a sample substrate and haze of a sample substrate measured immediately after epitaxial growth is set to indirectly measure a substrate temperature by the upper pyrometer at the time of epitaxial growth onto a mass-production substrate.

Abstract: A process for producing a silicon wafer by conveying a (100) face silicon wafer into and from a treating furnace of a single wafer heat-treating apparatus or a vapor phase growth apparatus with a conveying blade having a mounting face capable of mounting only a specified region of the wafer inclusive of a center position of its rear face for subjecting the wafer to a heat treatment or a vapor phase growth, in which <010> or <001> orientation is shifted by a predetermined angle with respect to a transverse direction of the mounting face of the conveying blade.

Abstract: An audio reproducing apparatus includes: a decoding module configured to perform a decoding process on a digital broadcast signal demodulated by a demodulating module and generate an audio signal; a generating module configured to generate suspension audio data based on the audio signal of a first given time period, the audio signal being output from the decoding module; a switching module configured to switch a source of the audio signal to be output from the audio output module between the decoding module and a storage module; and a control module configured to control the switching module to switch the source to the storage module for causing an audio output module to output selected suspension audio data to be faded-out when a suspension of the decoding by the decoding module is occurred, the selected suspension audio data being the suspension audio data stored immediately before the suspension.

Abstract: To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial wafer according to the present invention includes: an oxide film forming step in which an oxide film is formed on a back surface thereof; an etching step in which a hydrophobic portion exposing a back surface of the semiconductor wafer is provided by partially removing the oxide film; a wafer placing step in which the semiconductor wafer is placed; and an epitaxial growth step in which an epitaxial layer is grown on a main surface of the semiconductor wafer; and the diameter of the lift pin installation circle provided on a circle on a bottom face of a susceptor is smaller than that of the hydrophobic portion.

Abstract: A method for manufacturing an epitaxial wafer is provided, which can alleviate distortions on a back surface of the epitaxial wafer. The method for manufacturing an epitaxial wafer using a susceptor for a vapor phase growth system having a concave shaped wafer placement portion on an upper face thereof, on which a semiconductor wafer is placed, includes: an oxide film forming step in which an oxide film Ox is formed on a back surface of the semiconductor wafer; a wafer placing step in which, after the oxide film forming step, the semiconductor wafer is placed on a wafer placement portion so that the back surface of the semiconductor wafer faces downward; and an epitaxial growth step in which, after the wafer placing step, an epitaxial layer is grown on a main surface of the semiconductor wafer.

Abstract: A secondary battery includes an electrode group 4 in which a positive electrode plate 1 and a negative electrode plate 2 are wounded with a porous insulation layer interposed therebetween, wherein an electrode plate end portion 1a protrudes from the porous insulation layer and abuts the current collector plate 5, and the current collector plate 5 is placed in relation to the electrode group 4 so as to entirely cover the end portion 1a of the electrode group 4. Parts of the electrode plate end portion 1a abutting the current collector plate 5 are welded to the current collector plate 5 at discrete joint portions 6 on the current collector plate 5, and the joint portions 6 are discretely provided on a surface of the current collector plate 5 so that a current flowing from the electrode plate 1 to the current collector plate 5 is uniformly distributed.

Abstract: A non-aqueous electrolyte secondary battery includes a positive electrode, a negative electrode, a non-aqueous electrolyte, and an insulating layer formed on a surface of the positive electrode. The positive electrode includes a lithium nickel composite oxide having a layer structure, and the lithium nickel composite oxide is represented by the general formula: LixNiyM1?yO2 where M is at least one selected from the group consisting of Na, Mg, Sc, Y, Mn, Fe, Co, Cu, Zn, Al, Cr, Pb, Sb, and B, 0<x?1.2, and 0.5<y?1.0. The non-aqueous electrolyte includes a solute and a non-aqueous solvent dissolving the solute, and the non-aqueous solvent contains 40% by weight or more of a cyclic carbonic acid ester. The insulating layer includes an insulating polymeric material.

Abstract: In a method for manufacturing an epitaxial wafer by which an epitaxial layer is formed on a surface of a silicon wafer arranged in a reactor by distributing a raw material gas in the reactor, a temperature of a susceptor at the time of carrying the silicon wafer into the reactor is adjusted in accordance with a resistivity of the silicon wafer. There is provided the method for manufacturing an epitaxial wafer, the method enabling reduction in generation of particles from friction of a back surface edge portion and the susceptor due to warpage of the wafer caused at the time of carriage into the reactor and occurrence of scratches on the silicon wafer back surface edge portion without requiring a complicated apparatus.

Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, a porous insulating layer and a nonaqueous electrolyte. The porous insulating layer is provided between the positive electrode and the negative electrode and contains a material which does not have a shutdown function. Each of the positive electrode and the negative electrode includes an expandable element.

Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, a porous insulating layer and a nonaqueous electrolyte. The porous insulating layer is provided between the positive electrode material mixture layer and the negative electrode material mixture layer and contains a material which does not have a shutdown function. The positive electrode is provided with a PTC layer extending substantially parallel to the positive electrode collector and the negative electrode is provided with a PTC layer extending substantially parallel to the negative electrode collector. Each of the PTC layers contains a material having a positive temperature coefficient of resistance.

Abstract: In a nonaqueous electrolyte secondary battery in which an electrode plate group including a positive electrode plate and a negative electrode plate which have a positive electrode mixture layer formed on a positive electrode current collector to contain a positive electrode active material and a negative electrode mixture layer formed on a negative electrode current collector to contain a negative electrode active material, respectively, and are spirally wound or stacked with a separator interposed therebetween is encapsulated in a battery exterior packaging body with an electrolyte, the battery exterior packaging body includes a gas releasing valve for releasing gas in the battery exterior packaging body to the outside when a gas pressure in the battery exterior packaging body reaches a working pressure and is formed to be deformable where the gas pressure in the battery exterior packaging body is lower than the working pressure of the gas releasing valve.

Abstract: According to one embodiment, a receiving apparatus includes a receiving unit configured to receive digital television broadcast data, a first reproducing unit configured to select data for first content from the digital television broadcast data received by the receiving unit and to reproduce the selected data, a second reproducing unit configured to select data for second content from the digital television broadcast data received by the receiving unit and to reproducing the selected data, and a switching unit configured to selectively operating either the first reproducing unit or the second reproducing unit.

Abstract: A tuner unit includes a scan-candidate registration unit that registers candidate frequencies to be scanned, a scan-frequency selection unit that selects frequencies to be scanned, a first scan unit that performs scanning on the basis of the frequencies to be scanned, a reception determination unit that determines whether channel signals can be received, a scan-candidate-frequency update unit that registers, as detected frequencies, frequencies of ones of the channel signals that can be received and eliminates ones of the candidate frequencies to be scanned within a predetermined range with its center at each of the detected frequencies, and a second scan unit that performs scanning on the basis of the updated candidate frequencies to be scanned. Even when the second scan unit performs scanning, the scan-candidate-frequency update unit performs the same process as described above.