Patents by Inventor Naruhito Iwasa

Naruhito Iwasa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200172767
    Abstract: Provided is an electroconductive adhesive which is less apt to suffer cracking, chipping, etc. upon sintering and gives sintered objects having excellent mechanical strength. The electroconductive adhesive comprises metallic microparticles which include a protective layer comprising one or more amines and have an average particle diameter of 30-300 nm, the amines comprising a C5-7 monoalkylamine and/or an alkoxyamine represented by the following general formula (1). NH2—R2—O—R1 (1) In the protective layer, the ratio of the C5-7 monoalkylamine and/or alkoxyamine represented by the general formula (1) to one or more amines different therefrom is in the range of 100:0 to 10:90. [In formula (1), R1 represents a C1-4 alkyl group and R2 represents a C1-4 alkylene group.
    Type: Application
    Filed: May 24, 2017
    Publication date: June 4, 2020
    Inventors: Takamichi MORI, Junichiro MINAMI, Naruhito IWASA
  • Patent number: 10604600
    Abstract: The objection of the present invention is to provide a photocurable resin composition having deep curability. The photocurable resin composition comprises an allyl polymer (a) produced by polymerization of an allyl compound represented by the following formula (1), a photocurable compound (b), and a photopolymerization initiator (c). In the formula, n represents an integer of 2 to 4; Z is selected from a binding site, an n-valent aliphatic chain hydrocarbon group optionally having a hydroxyl group, an n-valent alicyclic hydrocarbon group optionally having an alkyl group, and an n-valent aromatic hydrocarbon group optionally having an alkyl group; n is 2 and two —COOCH2CH?CH2 moieties are directly bonded to each other when Z is a binding site.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: March 31, 2020
    Assignee: OSAKA SODA CO., LTD.
    Inventors: Hideaki Umakoshi, Naruhito Iwasa, Hiroki Yamamoto
  • Publication number: 20190100608
    Abstract: The objection of the present invention is to provide a photocurable resin composition having deep curability. The photocurable resin composition comprises an allyl polymer (a) produced by polymerization of an allyl compound represented by the following formula (1), a photocurable compound (b), and a photopolymerization initiator (c). In the formula, n represents an integer of 2 to 4; Z is selected from a binding site, an n-valent aliphatic chain hydrocarbon group optionally having a hydroxyl group, an n-valent alicyclic hydrocarbon group optionally having an alkyl group, and an n-valent aromatic hydrocarbon group optionally having an alkyl group; n is 2 and two —COOCH2CH?CH2 moieties are directly bonded to each other when Z is a binding site.
    Type: Application
    Filed: March 10, 2017
    Publication date: April 4, 2019
    Applicant: OSAKA SODA CO., LTD.
    Inventors: Hideaki UMAKOSHI, Naruhito IWASA, Hiroki YAMAMOTO
  • Publication number: 20180186064
    Abstract: The present invention aims to provide a lining composition which overcomes the problems such as environmental problems (e.g. marine pollution) and VOC problem and which has a good cure rate. We have found that this can be achieved by a composition containing a vinyl ester resin as a prepolymer component and an aliphatic or alicyclic polyfunctional allyl ester compound as a crosslinking agent.
    Type: Application
    Filed: June 3, 2016
    Publication date: July 5, 2018
    Inventors: Suguru HASHIDATE, Naruhito IWASA, Hideaki UMAKOSHI
  • Patent number: 8304790
    Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: November 6, 2012
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa
  • Publication number: 20110313127
    Abstract: Provided is a method for producing polylactic acid comprising the step of a ring-opening polymerization of lactide in the presence of an alkylaluminum compound represented by the following formula (1): R1nAlX3-n??Formula (1) (wherein n represents an integer of 1 to 3; R1 may be the same or different and independently represents a linear or branched alkyl group having 1 to 10 carbon atoms; X may be the same or different and independently represents a halogen atom or a hydrogen atom; and Al represents an aluminum atom) as a ring-opening polymerization catalyst. The ring-opening polymerization of lactide further effectively proceeds in the presence of at least one kind of metal compounds selected from the group consisting of aluminum compounds (except the alkylaluminum compounds represented by the above formula (1)), zinc compounds, titanium compounds, zirconium compounds, magnesium compounds, and calcium compounds.
    Type: Application
    Filed: January 29, 2010
    Publication date: December 22, 2011
    Inventors: Naruhito Iwasa, Katsuhito Miura, Yoshiro Furukawa
  • Patent number: 7442254
    Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
    Type: Grant
    Filed: November 14, 2006
    Date of Patent: October 28, 2008
    Assignee: Nichia Corporation
    Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
  • Publication number: 20070272915
    Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
    Type: Application
    Filed: December 8, 2006
    Publication date: November 29, 2007
    Applicant: Nichia Corporation
    Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa
  • Publication number: 20070057276
    Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
    Type: Application
    Filed: November 14, 2006
    Publication date: March 15, 2007
    Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
  • Patent number: 7166874
    Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
    Type: Grant
    Filed: November 24, 2003
    Date of Patent: January 23, 2007
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa
  • Patent number: 7166869
    Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
    Type: Grant
    Filed: March 16, 2004
    Date of Patent: January 23, 2007
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa
  • Patent number: 7154128
    Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
    Type: Grant
    Filed: February 9, 2005
    Date of Patent: December 26, 2006
    Assignee: Nichia Chemical Industries, Limited
    Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
  • Patent number: 7083679
    Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
    Type: Grant
    Filed: November 8, 2001
    Date of Patent: August 1, 2006
    Assignee: Nichia Corporation
    Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
  • Publication number: 20050202682
    Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
    Type: Application
    Filed: February 9, 2005
    Publication date: September 15, 2005
    Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
  • Patent number: 6940103
    Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
    Type: Grant
    Filed: June 23, 2003
    Date of Patent: September 6, 2005
    Assignee: Nichia Chemical Industries, Ltd.
    Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
  • Patent number: 6900465
    Abstract: A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.
    Type: Grant
    Filed: March 16, 2001
    Date of Patent: May 31, 2005
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa, Hiroyuki Kiyoku
  • Publication number: 20040183063
    Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
    Type: Application
    Filed: March 16, 2004
    Publication date: September 23, 2004
    Applicant: Nichia Corporation
    Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa
  • Patent number: 6791103
    Abstract: A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1−xN (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.
    Type: Grant
    Filed: August 27, 2002
    Date of Patent: September 14, 2004
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Takashi Mukai, Naruhito Iwasa
  • Patent number: 6756611
    Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
    Type: Grant
    Filed: October 2, 2002
    Date of Patent: June 29, 2004
    Assignee: Nichia Chemical Industries, Ltd.
    Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
  • Patent number: RE42770
    Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: October 4, 2011
    Assignee: Nichia Corporation
    Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho