Abstract: Provided is a method for highly efficiently producing highly pure single-walled carbon nanotubes. This method for producing carbon nanotubes by fluidized CVD includes: a step for heating a material (A) to 1200° C. or higher, in which the total mass of Al2O3 and SiO2 constitutes at least 90% of the total mass of the material (A) and the mass ratio of Al2O3/SiO2 is in the range of 1.0-2.3; and a step for bringing a gas, which is present in the environment in which the material (A) is being heated to 1200° C. or higher, into contact with a feed gas to generate carbon nanotubes.

Abstract: The present invention provides novel silver particles that when used as a conductive adhesive, are satisfactorily sintered at a low temperature without application of pressure during sintering of the conductive adhesive, and form a sintered body with high denseness and high mechanical strength (shear strength). Silver particles comprising silver particles A with an average particle diameter in the range of 50 to 500 nm, and silver particles B with an average particle diameter in the range of 0.5 to 5.5 ?m, wherein the silver particles satisfy a relationship in which the average particle diameter of the silver particles B is 5 to 11 times the average particle diameter of the silver particles A.

Abstract: The present invention provides silver nanoparticles that form a sintered body having a high shear strength and a low specific resistance when sintered at a low temperature (for example, 200° C. or less), even though the silver nanoparticles have an average particle diameter as large as 200 nm or more. Silver nanoparticles having an average particle diameter of 200 to 600 nm, wherein an exothermic peak due to binding of the silver nanoparticles in thermogravimetry-differential thermal analysis appears at less than 175° C., and a weight loss on heating from 30 to 500° C. by thermogravimetry-differential thermal analysis is 0.4% by weight or less.

Abstract: Provided is a method for highly efficiently producing highly pure single-walled carbon nanotubes. This method for producing carbon nanotubes by fluidized CVD includes: a step for heating a material (A) to 1200° C. or higher, in which the total mass of Al2O3 and SiO2 constitutes at least 90% of the total mass of the material (A) and the mass ratio of Al2O3/SiO2 is in the range of 1.0-2.3; and a step for bringing a gas, which is present in the environment in which the material (A) is being heated to 1200° C. or higher, into contact with a feed gas to generate carbon nanotubes.

Abstract: An object of the present invention is to provide an active energy ray-curable inkjet ink composition that has a low viscosity such that the composition can be ejected as an inkjet ink, and can exhibit sufficient adhesion to a plastic substrate having low surface free energy. The present invention provides an active energy ray-curable inkjet ink composition comprising a polyester resin (A), wherein the polyester resin (A) contains a structural unit (a-1) derived from a polybasic acid and a structural unit (a-2) derived from a polyhydric alcohol, the structural unit (a-2) derived from a polyhydric alcohol contains 20 mol % or more and 100 mol % or less of a structural unit derived from hydrogenated bisphenol A, and the polyester resin (A) has a number average molecular weight (Mn) of 500 to 4,500 and an acid value of 5 to 300.

Abstract: Provided is an electroconductive adhesive which is less apt to suffer cracking, chipping, etc. upon sintering and gives sintered objects having excellent mechanical strength. The electroconductive adhesive comprises metallic microparticles which include a protective layer comprising one or more amines and have an average particle diameter of 30-300 nm, the amines comprising a C5-7 monoalkylamine and/or an alkoxyamine represented by the following general formula (1). NH2—R2—O—R1 (1) In the protective layer, the ratio of the C5-7 monoalkylamine and/or alkoxyamine represented by the general formula (1) to one or more amines different therefrom is in the range of 100:0 to 10:90. [In formula (1), R1 represents a C1-4 alkyl group and R2 represents a C1-4 alkylene group.

Abstract: The objection of the present invention is to provide a photocurable resin composition having deep curability. The photocurable resin composition comprises an allyl polymer (a) produced by polymerization of an allyl compound represented by the following formula (1), a photocurable compound (b), and a photopolymerization initiator (c). In the formula, n represents an integer of 2 to 4; Z is selected from a binding site, an n-valent aliphatic chain hydrocarbon group optionally having a hydroxyl group, an n-valent alicyclic hydrocarbon group optionally having an alkyl group, and an n-valent aromatic hydrocarbon group optionally having an alkyl group; n is 2 and two —COOCH2CH?CH2 moieties are directly bonded to each other when Z is a binding site.

Abstract: The objection of the present invention is to provide a photocurable resin composition having deep curability. The photocurable resin composition comprises an allyl polymer (a) produced by polymerization of an allyl compound represented by the following formula (1), a photocurable compound (b), and a photopolymerization initiator (c). In the formula, n represents an integer of 2 to 4; Z is selected from a binding site, an n-valent aliphatic chain hydrocarbon group optionally having a hydroxyl group, an n-valent alicyclic hydrocarbon group optionally having an alkyl group, and an n-valent aromatic hydrocarbon group optionally having an alkyl group; n is 2 and two —COOCH2CH?CH2 moieties are directly bonded to each other when Z is a binding site.

Abstract: The present invention aims to provide a lining composition which overcomes the problems such as environmental problems (e.g. marine pollution) and VOC problem and which has a good cure rate. We have found that this can be achieved by a composition containing a vinyl ester resin as a prepolymer component and an aliphatic or alicyclic polyfunctional allyl ester compound as a crosslinking agent.

Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.

Abstract: Provided is a method for producing polylactic acid comprising the step of a ring-opening polymerization of lactide in the presence of an alkylaluminum compound represented by the following formula (1): R1nAlX3-n??Formula (1) (wherein n represents an integer of 1 to 3; R1 may be the same or different and independently represents a linear or branched alkyl group having 1 to 10 carbon atoms; X may be the same or different and independently represents a halogen atom or a hydrogen atom; and Al represents an aluminum atom) as a ring-opening polymerization catalyst. The ring-opening polymerization of lactide further effectively proceeds in the presence of at least one kind of metal compounds selected from the group consisting of aluminum compounds (except the alkylaluminum compounds represented by the above formula (1)), zinc compounds, titanium compounds, zirconium compounds, magnesium compounds, and calcium compounds.

Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.

Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.

Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.

Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.