Patents by Inventor Naruhito Iwasa
Naruhito Iwasa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6940103Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.Type: GrantFiled: June 23, 2003Date of Patent: September 6, 2005Assignee: Nichia Chemical Industries, Ltd.Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
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Patent number: 6900465Abstract: A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.Type: GrantFiled: March 16, 2001Date of Patent: May 31, 2005Assignee: Nichia CorporationInventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa, Hiroyuki Kiyoku
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Publication number: 20040183063Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.Type: ApplicationFiled: March 16, 2004Publication date: September 23, 2004Applicant: Nichia CorporationInventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa
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Patent number: 6791103Abstract: A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1−xN (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.Type: GrantFiled: August 27, 2002Date of Patent: September 14, 2004Assignee: Nichia CorporationInventors: Shuji Nakamura, Takashi Mukai, Naruhito Iwasa
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Patent number: 6756611Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.Type: GrantFiled: October 2, 2002Date of Patent: June 29, 2004Assignee: Nichia Chemical Industries, Ltd.Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
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Publication number: 20040101012Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.Type: ApplicationFiled: November 24, 2003Publication date: May 27, 2004Applicant: Nichia CorporationInventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa
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Publication number: 20040094773Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.Type: ApplicationFiled: June 23, 2003Publication date: May 20, 2004Applicant: NICHIA CHEMICAL INDUSTRIES, LTD.Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
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Publication number: 20030216011Abstract: A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1-xN (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.Type: ApplicationFiled: June 9, 2003Publication date: November 20, 2003Applicant: Nichia Chemical Industries Ltd.Inventors: Shuji Nakamura, Takashi Mukai, Naruhito Iwasa
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Patent number: 6580099Abstract: A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.Type: GrantFiled: October 11, 2001Date of Patent: June 17, 2003Assignee: Nichia Chemical Industries, Ltd.Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa, Hiroyuki Kiyoku
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Publication number: 20030037722Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.Type: ApplicationFiled: October 2, 2002Publication date: February 27, 2003Applicant: NICHIA CHEMICAL INDUSTRIES, LTD.Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
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Publication number: 20030015724Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.Type: ApplicationFiled: August 28, 2002Publication date: January 23, 2003Applicant: Nichia Chemical Industries, Ltd.Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa
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Publication number: 20030006424Abstract: A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1−xN (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.Type: ApplicationFiled: August 27, 2002Publication date: January 9, 2003Applicant: Nichia Chemical Industries Ltd.Inventors: Shuji Nakamura, Takashi Mukai, Naruhito Iwasa
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Publication number: 20020167019Abstract: ? A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.Type: ApplicationFiled: October 11, 2001Publication date: November 14, 2002Applicant: NICHIA CHEMICAL INDUSTRIES, LTD.Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa, Hiroyuki Kiyoku
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Patent number: 6469323Abstract: A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1−xN (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.Type: GrantFiled: March 1, 2000Date of Patent: October 22, 2002Assignee: Nichia Chemical Industries, Ltd.Inventors: Shuji Nakamura, Takashi Mukai, Naruhito Iwasa
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Publication number: 20020046693Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.Type: ApplicationFiled: November 8, 2001Publication date: April 25, 2002Applicant: NICHIA CHEMICAL INDUSTRIES, LTD.Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
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Publication number: 20010030318Abstract: A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.Type: ApplicationFiled: March 16, 2001Publication date: October 18, 2001Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa, Hiroyuki Kiyoku
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Patent number: 6215133Abstract: A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1-xN (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.Type: GrantFiled: April 28, 1999Date of Patent: April 10, 2001Assignee: Nichia Chemical Industries, Ltd.Inventors: Shuji Nakamura, Takashi Mukai, Naruhito Iwasa
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Patent number: 6153010Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.Type: GrantFiled: December 9, 1998Date of Patent: November 28, 2000Assignee: Nichia Chemical Industries Ltd.Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
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Patent number: 6078063Abstract: A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.Type: GrantFiled: September 3, 1998Date of Patent: June 20, 2000Assignee: Nichia Chemical Industries Ltd.Inventors: Shuji Nakamura, Takashi Mukai, Naruhito Iwasa
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Patent number: 5959307Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.Type: GrantFiled: November 6, 1996Date of Patent: September 28, 1999Assignee: Nichia Chemical Industries Ltd.Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa