Patents by Inventor Nathan Gardner

Nathan Gardner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200403121
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 24, 2020
    Inventors: Fariba Danesh, Richard P. Schneider, JR., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10797202
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: October 6, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20200248698
    Abstract: Systems and methods are provided for determining a use condition of an appliance, such as a sump pump, and outputting an indication of the current use condition of the appliance. A system implementing the method will first generate an actual first signature of a first characteristic associated with the appliance. The system will then generate an actual second signature of a second characteristic associated with the appliance. Each of the actual first and second signatures are then compared to corresponding expected signatures. The system then selects a current use condition from a plurality of use conditions based on the relationship between the actual signatures and the expected signatures.
    Type: Application
    Filed: April 17, 2020
    Publication date: August 6, 2020
    Inventors: Nayeem M. Hussain, Ryan T. Fant, William J. McLeod, Theodore R. Ullrich, Dean DiPietro, Nathan Gardner Meryash, Pepin Sebastian Gelardi
  • Patent number: 10626873
    Abstract: Systems and methods are provided for determining a use condition of an appliance, such as a sump pump, and outputting an indication of the current use condition of the appliance. A system implementing the method will first generate an actual first signature of a first characteristic associated with the appliance. The system will then generate an actual second signature of a second characteristic associated with the appliance. Each of the actual first and second signatures are then compared to corresponding expected signatures. The system then selects a current use condition from a plurality of use conditions based on the relationship between the actual signatures and the expected signatures.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: April 21, 2020
    Assignee: CONNECTM TECHNOLOGY SOLUTIONS, INC.
    Inventors: Nayeem M. Hussain, Ryan T. Fant, William J. McLeod, Theodore R. Ullrich, Dean DiPietro, Nathan Gardner Meryash, Pepin Sebastian Gelardi
  • Publication number: 20200119229
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: December 12, 2019
    Publication date: April 16, 2020
    Inventors: Fariba Danesh, Richard P. Schneider, JR., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10566499
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: February 18, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10483319
    Abstract: A pixelated display device and a method for making the same are disclosed. The device may include an array of nanowire LEDs located above a substrate. When the nanowire LEDs are initially grown, they may emit first-wavelength light proximally to the substrate and second-wavelength light distally from the substrate. The nanowires may remain as initially grown, in which case only second-wavelength light is visible, or the second-wavelength light emitting portions may be etched away such that only first-wavelength light is visible.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: November 19, 2019
    Assignee: GLO AB
    Inventors: Nathan Gardner, Ronald Kaneshiro, Daniel Bryce Thompson, Fariba Danesh, Martin Schubert
  • Publication number: 20190341525
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: July 16, 2019
    Publication date: November 7, 2019
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10361341
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: July 23, 2019
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10304810
    Abstract: A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: May 28, 2019
    Assignee: GLO AB
    Inventors: Nathan Gardner, Fredrick A. Kish, Jr., Miljenko Modric, Anusha Pokhriyal, Daniel Thompson, Fariba Danesh
  • Patent number: 10217911
    Abstract: A set of light emitting devices can be formed on a substrate A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second hand gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: February 26, 2019
    Assignee: GLO AB
    Inventors: Martin Schubert, Daniel Bryce Thompson, Michael Grundmann, Nathan Gardner
  • Patent number: 10177123
    Abstract: A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: January 8, 2019
    Assignee: GLO AB
    Inventors: Nathan Gardner, Fredrick A. Kish, Jr., Miljenko Modric, Anusha Pokhriyal, Daniel Bryce Thompson, Fariba Danesh, Sharon N. Farrens
  • Patent number: D839297
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: January 29, 2019
    Assignee: MX TECHNOLOGIES, INC.
    Inventors: Nathan Gardner, Matthew B. Chadbourne, Rachel Wolthuis
  • Patent number: D839906
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: February 5, 2019
    Assignee: MX TECHNOLOGIES, INC.
    Inventors: Nathan Gardner, Matthew B. Chadbourne, Rachel Wolthuis
  • Patent number: D839907
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: February 5, 2019
    Assignee: MX TECHNOLOGIES, INC.
    Inventors: Nathan Gardner, Matthew B. Chadbourne, Rachel Wolthuis
  • Patent number: D839908
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: February 5, 2019
    Assignee: MX TECHNOLOGIES, INC.
    Inventors: Nathan Gardner, Matthew B. Chadbourne, Rachel Wolthuis
  • Patent number: D839909
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: February 5, 2019
    Assignee: MX TECHNOLOGIES, INC.
    Inventors: Nathan Gardner, Matthew B. Chadbourne, Rachel Wolthuis
  • Patent number: D839910
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: February 5, 2019
    Assignee: MX TECHNOLOGIES, INC.
    Inventors: Nathan Gardner, Matthew B. Chadbourne, Rachel Wolthuis
  • Patent number: D839911
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: February 5, 2019
    Assignee: MX TECHNOLOGIES, INC.
    Inventors: Nathan Gardner, Matthew B. Chadbourne, Rachel Wolthuis
  • Patent number: D842880
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: March 12, 2019
    Assignee: MX TECHNOLOGIES, INC.
    Inventors: Nathan Gardner, Matthew B. Chadbourne, Rachel Wolthuis