Patents by Inventor Nathan P. Marchack

Nathan P. Marchack has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11013908
    Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: May 25, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven J. Holmes, Qinghuang Lin, Emily R. Kinser, Nathan P. Marchack, Roy R. Yu
  • Publication number: 20210151503
    Abstract: A semiconductor structure and fabrication method of forming a semiconductor structure. The structure is a MRAM element having a first conductive electrode embedded in a first interconnect dielectric material layer upon which a multi-layered magnetic tunnel junction (MTJ) memory element is formed in a magnetoresistive random access memory (MRAM) device area. The first conductive electrode includes a first end having a top surface of a first surface area and a second end having a bottom surface of a second surface area, the first surface area being smaller than the second surface area. The second end of the bottom electrode includes a barrier liner material including a metal fill material, and the first end of the bottom electrode is a pillar structure formed as a result of an etchback process in which the metal barrier liner is recessed relative to the metal fill material.
    Type: Application
    Filed: December 29, 2020
    Publication date: May 20, 2021
    Inventors: Pouya Hashemi, Bruce B.` Doris, Chandrasekharan Kothandaraman, Nathan P. Marchack
  • Patent number: 11011698
    Abstract: A magnetic memory device includes a magnetic memory stack including a bottom electrode and having a hard mask formed thereon. An encapsulation layer is formed over sides of the magnetic memory stack and has a thickness adjacent to the sides formed on the bottom electrode. A dielectric material is formed over the encapsulation layer and is removed from over the hard mask and gapped apart from the encapsulation layer on the sides of the magnetic memory stack to form trenches between the dielectric material and the encapsulation layer at the sides of the magnetic memory stack. A top electrode is formed over the hard mask and in the trenches such that the top electrode is spaced apart from the bottom electrode by at least the thickness.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: May 18, 2021
    Assignee: International Business Machines Corporation
    Inventors: Anthony J. Annunziata, Gen P. Lauer, Nathan P. Marchack
  • Publication number: 20210119113
    Abstract: A magnetic tunnel junction (MTJ) containing device is provided that includes an undercut conductive pedestal structure having a concave sidewall positioned between a bottom electrode and a MTJ pillar. The geometric nature of such a conductive pedestal structure makes the pedestal structure unlikely to be resputtered and deposited on a sidewall of the MTJ pillar, especially the sidewall of the tunnel barrier of the MTJ pillar. Thus, electrical shorts caused by depositing resputtered conductive metal particles on the sidewall of the tunnel barrier of the MTJ pillar are substantially reduced.
    Type: Application
    Filed: December 28, 2020
    Publication date: April 22, 2021
    Inventors: Nathan P. Marchack, Bruce B. Doris
  • Publication number: 20210118693
    Abstract: A method of plasma processing that includes maintaining a plasma processing chamber between 10° C. to 200° C., flowing oxygen and nitrogen into the plasma processing chamber, where a ratio of a flow rate of the nitrogen to a flow rate of oxygen is between about 1:5 and about 1:1, and etching a ruthenium/osmium layer by sustaining a plasma in the plasma processing chamber.
    Type: Application
    Filed: October 21, 2019
    Publication date: April 22, 2021
    Inventors: Nicholas Joy, Devi Koty, Qingyun Yang, Nathan P. Marchack, Sebastian Ulrich Engelmann
  • Publication number: 20210119121
    Abstract: A bottom electrode structure for a magnetic tunnel junction (MTJ) containing device is provided. The bottom electrode structure includes a mesa portion that is laterally surrounded by a recessed region. The recessed region of the bottom electrode structure is laterally adjacent to a dielectric material, and a MTJ pillar is located on the mesa portion of the bottom electrode structure. Such a configuration shields the recessed region from impinging ions thus preventing deposition of resputtered conductive metal particles from the bottom electrode onto the MTJ pillar.
    Type: Application
    Filed: December 30, 2020
    Publication date: April 22, 2021
    Inventors: Nathan P. Marchack, Bruce B. Doris, Pouya Hashemi
  • Patent number: 10957738
    Abstract: A semiconductor structure and fabrication method of forming a semiconductor structure. The structure is a MRAM element having a first conductive electrode embedded in a first interconnect dielectric material layer upon which a multi-layered magnetic tunnel junction (MTJ) memory element is formed in a magnetoresistive random access memory (MRAM) device area. The first conductive electrode includes a first end having a top surface of a first surface area and a second end having a bottom surface of a second surface area, the first surface area being smaller than the second surface area. The second end of the bottom electrode includes a barrier liner material including a metal fill material, and the first end of the bottom electrode is a pillar structure formed as a result of an etchback process in which the metal barrier liner is recessed relative to the metal fill material.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: March 23, 2021
    Assignee: International Business Machines Corporation
    Inventors: Pouya Hashemi, Bruce B. Doris, Chandrasekharan Kothandaraman, Nathan P. Marchack
  • Publication number: 20210066578
    Abstract: A multilayered bottom electrode for a magnetic tunnel junction (MTJ) containing device is provided that includes, from bottom to top, a base segment having a first diameter and composed of a remaining portion of a first bottom electrode metal-containing layer, a middle segment having a second diameter and composed of a remaining portion of a second bottom electrode metal-containing layer, and an upper segment having a third diameter and composed of a remaining portion of a third bottom electrode metal-containing layer, wherein the first diameter is greater than the second diameter, and the third diameter is equal to, or less than, the second diameter. The wider base segment of each multilayered bottom electrode prevents tilting and/or bowing of the resultant bottom electrode. Thus, a stable bottom electrode is provided.
    Type: Application
    Filed: August 27, 2019
    Publication date: March 4, 2021
    Inventors: Bruce B. Doris, Thitima Suwannasiri, Nathan P. Marchack, Pouya Hashemi
  • Publication number: 20210066581
    Abstract: A dielectric material structure is formed laterally adjacent to a bottom portion of a bottom electrode metal-containing portion that extends upward from an electrically conductive structure that is embedded in an interconnect dielectric material layer. The physically exposed top portion of the bottom electrode metal-containing portion is then trimmed to provide a bottom electrode of unitary construction (i.e., a single piece) that has a lower portion having a first diameter and an upper portion that has a second diameter that is greater than the first diameter. The presence of the dielectric material structure prevents tilting and/or bowing of the resultant bottom electrode. Thus, a stable bottom electrode is provided.
    Type: Application
    Filed: August 29, 2019
    Publication date: March 4, 2021
    Inventors: Bruce B. Doris, Eileen A. Galligan, Nathan P. Marchack, Pouya Hashemi
  • Patent number: 10937945
    Abstract: A magnetic tunnel junction (MTJ) containing device is provided that includes an undercut conductive pedestal structure having a concave sidewall positioned between a bottom electrode and a MTJ pillar. The geometric nature of such a conductive pedestal structure makes the pedestal structure unlikely to be resputtered and deposited on a sidewall of the MTJ pillar, especially the sidewall of the tunnel barrier of the MTJ pillar. Thus, electrical shorts caused by depositing resputtered conductive metal particles on the sidewall of the tunnel barrier of the MTJ pillar are substantially reduced.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: March 2, 2021
    Assignee: International Business Machines Corporation
    Inventors: Nathan P. Marchack, Bruce B. Doris
  • Patent number: 10926079
    Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: February 23, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven J. Holmes, Qinghuang Lin, Emily R. Kinser, Nathan P. Marchack, Roy R. Yu
  • Patent number: 10918852
    Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: February 16, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven J. Holmes, Qinghuang Lin, Emily R. Kinser, Nathan P. Marchack, Roy R. Yu
  • Patent number: 10903417
    Abstract: A method of forming a magnetic tunnel junction (MTJ) containing device is provided in which a patterned sacrificial material is present atop a MTJ pillar that is located on a bottom electrode. A passivation material liner and a dielectric material portion laterally surround the MTJ pillar and the patterned sacrificial material. The patterned sacrificial material is removed from above the MTJ pillar and replaced with a top electrode. A seam is present in the top electrode. The method mitigates the possibility of depositing resputtered conductive metal particles on a sidewall of the MTJ pillar. Thus, improved device performance, in terms of a reduction in failure mode, can be obtained.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: January 26, 2021
    Assignee: International Business Machines Corporation
    Inventors: Pouya Hashemi, Alexander Reznicek, Nathan P. Marchack, Bruce B. Doris
  • Patent number: 10892403
    Abstract: A bottom electrode structure for a magnetic tunnel junction (MTJ) containing device is provided. The bottom electrode structure includes a mesa portion that is laterally surrounded by a recessed region. The recessed region of the bottom electrode structure is laterally adjacent to a dielectric material, and a MTJ pillar is located on the mesa portion of the bottom electrode structure. Such a configuration shields the recessed region from impinging ions thus preventing deposition of resputtered conductive metal particles from the bottom electrode onto the MTJ pillar.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: January 12, 2021
    Assignee: International Business Machines Corporation
    Inventors: Nathan P. Marchack, Bruce B. Doris, Pouya Hashemi
  • Patent number: 10840433
    Abstract: An ultra-small diameter and a tall bottom electrode for use in magnetic random access memory (MRAM) devices containing a multilayered MTJ pillar is provided. The bottom electrode is formed by depositing a thick bottom electrode layer on a surface of a metallic etch stop layer. The bottom electrode layer is then patterned by lithography and etching to provide a bottom electrode structure. An angled ion beam etch is thereafter used to trim the bottom electrode structure into a bottom electrode having a high aspect ratio (on the order of 10:1 or greater).
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: November 17, 2020
    Assignee: International Business Machines Corporation
    Inventors: Pouya Hashemi, Bruce B. Doris, John A. Ott, Nathan P. Marchack
  • Patent number: 10840441
    Abstract: Techniques for MRAM patterning using a diamond-like carbon hardmask are provided. In one aspect, a method of forming an MRAM device includes: forming an MRAM stack on a substrate; depositing a metal hardmask layer on the MRAM stack; depositing a diamond-like carbon layer on the metal hardmask layer; forming a patterned resist on the diamond-like carbon layer; patterning the diamond-like carbon layer using the patterned resist to form a diamond-like carbon pillar; patterning the metal hardmask layer using the diamond-like carbon pillar to form a patterned metal hardmask; and patterning the MRAM stack into an MRAM pillar using the patterned metal hardmask to form the MRAM device. An MRAM device is also provided.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: November 17, 2020
    Assignee: International Business Machines Corporation
    Inventors: Anthony Annunziata, Nathan P. Marchack, Eugene O'Sullivan, Chandrasekharan Kothandaraman
  • Publication number: 20200321220
    Abstract: A method for etching a poly-granular metal-based film includes providing a flow of a background gas in a plasma etching chamber containing a semiconductor structure including the poly-granular metal-based film formed over a substrate with a mask patterned over the poly-granular metal-based film. The method also includes applying a source power to generate a background plasma from the background gas, and providing a flow of a modifying gas while maintaining the flow of the background gas to generate a modifying plasma that produces a surface modification region with a substantially uniform depth in the top surface of the poly-granular metal-based film exposed by the mask. The method further includes stopping the flow of the modifying gas while maintaining the flow of the background gas, and applying a biasing power to the substrate to remove the surface modification region.
    Type: Application
    Filed: April 8, 2019
    Publication date: October 8, 2020
    Inventors: John M. Papalia, Hiroyuki Miyazoe, Nathan P. Marchack, Sebastian Ulrich Engelmann
  • Publication number: 20200321394
    Abstract: A semiconductor structure and fabrication method of forming a semiconductor structure. The structure is a MRAM element having a first conductive electrode embedded in a first interconnect dielectric material layer upon which a multi-layered magnetic tunnel junction (MTJ) memory element is formed in a magnetoresistive random access memory (MRAM) device area. The first conductive electrode includes a first end having a top surface of a first surface area and a second end having a bottom surface of a second surface area, the first surface area being smaller than the second surface area. The second end of the bottom electrode includes a barrier liner material including a metal fill material, and the first end of the bottom electrode is a pillar structure formed as a result of an etchback process in which the metal barrier liner is recessed relative to the metal fill material.
    Type: Application
    Filed: April 3, 2019
    Publication date: October 8, 2020
    Inventors: Pouya Hashemi, Bruce B. Doris, Chandrasekharan Kothandaraman, Nathan P. Marchack
  • Publication number: 20200299832
    Abstract: A method of fabricating a glassy carbon film is described. The method includes forming a soluble layer on a substrate, forming a lift-off stack that includes a lift-off mask layer and a hard-mask layer, and forming a pattern in the lift-off stack to expose a portion of the soluble layer. The exposed portions of the soluble layer are removed to expose a portion of the substrate. A carbon material is over the exposed portion of the substrate. The soluble layer is dissolved in a solvent, and the lift-off stack is lifted-off.
    Type: Application
    Filed: March 22, 2019
    Publication date: September 24, 2020
    Inventors: Steven J. Holmes, Deborah A. Neumayer, Stephen Bedell, Devendra K. Sadana, Damon Farmer, Nathan P. Marchack
  • Publication number: 20200303386
    Abstract: A magnetic tunnel junction (MTJ) containing device and methods of constructing the MTJ containing device are described. In an example, the MTJ containing device may be a memory element including a bottom electrode structure, a MTJ pillar, and a top electrode structure located on the MTJ pillar. The MTJ pillar has a non-circular lateral cross section, where the MTJ pillar has a bottommost portion forming an interface with an uppermost portion of the bottom electrode structure. The MTJ pillar has a lateral perimeter-to-area ratio that defines a breakdown voltage of the MTJ pillar.
    Type: Application
    Filed: March 21, 2019
    Publication date: September 24, 2020
    Inventors: Chandrasekharan Kothandaraman, Babar Khan, Nathan P. Marchack, Bruce B. Doris