Abstract: A method for forming a transistor that includes forming an intrinsic base on a substrate using nonselective epitaxy and forming a raised extrinsic base on the intrinsic base. The nonselective epitaxy used to form the intrinsic base avoids the costly, complex, and defect prone process of selective epitaxy while the raised extrinsic base avoids the high resistance, high noise, low gain, and base contact problems found in prior transistors having thin base regions.

Abstract: A method of accessing computer networks and data sources simultaneously is disclose. The method includes the steps of (a) selecting at least one of a target source to be accessed; and (b) running target parsing tool of said at least one of a target source if parsing is required. Also, there is disclosed a user interface for accessing multiple target sources simultaneously. The user interface includes a text entry field, a scroll-down menu for selecting one or more target sources, and an infobar for displaying information.