Abstract: A carbon dioxide capture system, fluid contactor and method are disclosed. In embodiments, a gas-liquid contactor unit is disposed along a process fluid flow axis and includes a contactor of network flow diversions barriers with flow voids for movement of process fluids therebetween. A plurality of heat exchange channels are provided in the flow diversion barriers to transport a heat exchange fluid through the contactor network. A heat exchange feed channel is provided to deliver feed of the heat exchange fluid to the heat exchange channels at multiple feed locations spaced along the flow axis. At least one heat exchange bypass channel may extend beyond the multiple feed locations to deliver a portion of the feed of the heat exchange fluid to additional heat exchange channels located downstream from the multiple feed locations for the heat exchange channels.

Abstract: A carbon dioxide capture system, fluid contactor and method are disclosed. In embodiments, a gas-liquid contactor unit is disposed along a process fluid flow axis and includes a contactor network of flow diversion barriers with flow voids for movement of process fluids therebetween. A plurality of heat exchange channels are provided in the flow diversion barriers to transport a heat exchange fluid through the contactor network. A heat exchange feed channel is provided to deliver feed of the heat exchange fluid to the heat exchange channels at multiple feed locations spaced along the flow axis. At least one heat exchange bypass channel may extend beyond the multiple feed locations to deliver a portion of the feed of the heat exchange fluid to additional heat exchange channels located downstream from the multiple feed locations for the heat exchange channels.

Abstract: A chemical processing system for removing carbon dioxide from a gas mixture using a multicomponent amine-based scrubbing solution includes a spectroscopic evaluation system with a liquid contact probe for spectroscopic investigation, an energy source connected with the liquid contact probe to provide the spectroscopic stimulation energy to the probe, a spectrometer connected with the liquid contact probe to detect the spectroscopic response energy to the probe and to output spectral data corresponding to the spectroscopic response energy, and a machine learning spectral data analyzer connected to the spectrometer for evaluation of the spectral data to determine a concentration value for each of water, amine component and captured carbon dioxide in the scrubbing solution, the machine learning spectral data analyzer being trained for each such component over a corresponding trained concentration range, and optionally over a trained temperature range to provide a temperature-compensated concentration value.

Abstract: A chemical processing system for removing carbon dioxide from a gas mixture using a multicomponent amine-based scrubbing solution includes a spectroscopic evaluation system with a liquid contact probe for spectroscopic investigation, an energy source connected with the liquid contact probe to provide the spectroscopic stimulation energy to the probe, a spectrometer connected with the liquid contact probe to detect the spectroscopic response energy to the probe and to output spectral data corresponding to the spectroscopic response energy, and a machine learning spectral data analyzer connected to the spectrometer for evaluation of the spectral data to determine a concentration value for each of water, amine component and captured carbon dioxide in the scrubbing solution, the machine learning spectral data analyzer being trained for each such component over a corresponding trained concentration range, and optionally over a trained temperature range to provide a temperature-compensated concentration value.

Abstract: A chemical processing system for removing carbon dioxide from a gas mixture using a multicomponent amine-based scrubbing solution includes a spectroscopic evaluation system with a liquid contact probe for spectroscopic investigation, an energy source connected with the liquid contact probe to provide the spectroscopic stimulation energy to the probe, a spectrometer connected with the liquid contact probe to detect the spectroscopic response energy to the probe and to output spectral data corresponding to the spectroscopic response energy, and a machine learning spectral data analyzer connected to the spectrometer for evaluation of the spectral data to determine a concentration value for each of water, amine component and captured carbon dioxide in the scrubbing solution, the machine learning spectral data analyzer being trained for each such component over a corresponding trained concentration range, and optionally over a trained temperature range to provide a temperature-compensated concentration value.

Abstract: A carbon dioxide capture system, fluid contactor and method are disclosed. In embodiments, a gas-liquid contactor unit is disposed along a process fluid flow axis and includes a contactor network of flow diversion barriers with flow voids for movement of process fluids therebetween. A plurality of heat exchange channels are provided in the flow diversion barriers to transport a heat exchange fluid through the contactor network. A heat exchange feed channel is provided to deliver feed of the heat exchange fluid to the heat exchange channels at multiple feed locations spaced along the flow axis. At least one heat exchange bypass channel may extend beyond the multiple feed locations to deliver a portion of the feed of the heat exchange fluid to additional heat exchange channels located downstream from the multiple feed locations for the heat exchange channels.

Abstract: An apparatus for applying different amounts of pressure to different locations of a semiconductor device structure or other substrate during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to individually apply pressure to a major surface of the semiconductor device structure during polishing thereof. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Abstract: An apparatus for applying different amounts of pressure to different locations of a semiconductor device structure or other substrate during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to individually apply pressure to a major surface of the semiconductor device structure during polishing thereof. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Abstract: An apparatus for applying different amounts of pressure to different locations of a backside of a semiconductor device structure during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to be biased against the backside of the semiconductor device structure during polishing thereof. The pressurization structures are independently movable with respect to one another. The amount of force or pressure applied by each pressurization structure to the backside of the semiconductor device structure is controlled by at least one corresponding actuator. The actuator may magnetically facilitate movement of the corresponding pressurization structure toward or away from the backside of the semiconductor device structure. The actuator may alternatively comprise a positive or negative pressure source.

Abstract: An apparatus for applying different amounts of pressure to different locations of a semiconductor device structure or other substrate during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to individually apply pressure to a major surface of the semiconductor device structure during polishing thereof. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Abstract: A differential pressure application apparatus is configured to apply different amounts of pressure to different locations of a substrate, such as a semiconductor device structure. The apparatus may be used during polishing or planarization processes. The apparatus includes physically discrete pressurization structures that may be moved independently from one another. An actuator may control the amount of force or pressure applied by each pressurization structure to the surface of the substrate. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Abstract: A polishing carrier head including a retaining ring for defining an area of a polishing pocket region used to polish a predetermined object, is provided. The polishing carrier head may further include a perforated plate positioned lateral to the retaining ring, the perforated plate having a plurality of perforations for permitting fluid flow. The polishing carrier head may further include a flexible membrane having a first region overlying a portion of the retaining ring and the perforated plate and a second region in which a first portion of the flexible membrane overlies a second portion of the flexible membrane to form one or more bellows. The polishing carrier head may further include an edge support ring in contact with the first region of the flexible membrane for clamping the first region of the flexible membrane to the perforated plate.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A differential pressure application apparatus is configured to apply different amounts of pressure to different locations of a substrate, such as a semiconductor device structure. The apparatus may be used during polishing or planarization processes. The apparatus includes pressurization structures that may be moved independently from one another. An actuator may control the amount of force or pressure applied by each pressurization structure to the surface of the substrate. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Abstract: An apparatus for applying different amounts of pressure to different locations of a backside of a semiconductor device structure during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to be biased against the backside of the semiconductor device structure during polishing thereof. The pressurization structures are independently movable with respect to one another. The amount of force or pressure applied by each pressurization structure to the backside of the semiconductor device structure is controlled by at least one corresponding actuator. The actuator may magnetically facilitate movement of the corresponding pressurization structure toward or away from the backside of the semiconductor device structure. The actuator may alternatively comprise a positive or negative pressure source.

Abstract: A chemical mechanical polishing (CMP) tool holds a conditioning disk that is used to remove impurities from a polishing disk used to planarize surfaces, such as a semiconductor surface. The tool uses an elastic disk that is positioned between a clamp and a gimbal hub that pivotally overlies a gimbal plate. The elastic disk is a polymer material, such as for example polytetrafluoroethylene (PTFE). The elastic disk has a central opening and is radially solid around the central opening. Alignment holes and drive mechanism holes pierce the elastic disk which functions to rotate the tool with minimal friction and provides a liquid seal from CMP fluids. Access holes in the gimbal plate permit easy installation and removal of the individual components. The PTFE disk is strong and durable enough to withstand high torque and provide lengthy operation without maintenance.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: An apparatus for applying different amounts of pressure to different locations of a backside of a semiconductor device structure during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to be biased against the backside of the semiconductor device structure during polishing thereof. The pressurization structures are independently movable with respect to one another. The amount of force or pressure applied by each pressurization structure to the backside of the semiconductor device structure is controlled by at least one corresponding actuator. The actuator may magnetically facilitate movement of the corresponding pressurization structure toward or away from the backside of the semiconductor device structure. The actuator may alternatively comprise a positive or negative pressure source.