Abstract: In order to provide a highly reliable organic EL element, a first step in which a deposition material is heated and vaporized in a deposition chamber in which the pressure is reduced and a second step in which a layer included in an EL layer is deposited in the deposition chamber are performed while exhaustion is performed and the partial pressure of water in the deposition chamber is measured with a mass spectrometer. Alternatively, the deposition chamber in the deposition apparatus includes a deposition material chamber and is connected to an exhaust mechanism. The deposition material chamber is separated from the deposition chamber by a sluice valve, includes a deposition material holding portion including a heating mechanism, and is connected to a mass spectrometer and an exhaust mechanism.

Abstract: An object of the present invention is to provide an apparatus for successive deposition used for manufacturing a semiconductor element including an oxide semiconductor in which impurities are not included. By using the deposition apparatus capable of successive deposition of the present invention that keeps its inside in high vacuum state, and thus allows films to be deposited without being exposed to the air, the entry of impurities such as hydrogen into the oxide semiconductor layer and the layer being in contact with the oxide semiconductor layer can be prevented; as a result, a semiconductor element including a high-purity oxide semiconductor layer in which hydrogen concentration is sufficiently reduced can be manufactured. In such a semiconductor element, off-state current is low, and a semiconductor device with low power consumption can be realized.