Patents by Inventor Neeraj Nepal

Neeraj Nepal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220406591
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal InN using a pulsed growth method at a temperature lower than 300° C.
    Type: Application
    Filed: August 3, 2022
    Publication date: December 22, 2022
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Patent number: 11443942
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: September 13, 2022
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Publication number: 20210091746
    Abstract: Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).
    Type: Application
    Filed: September 14, 2020
    Publication date: March 25, 2021
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Vikrant J. Gokhale, Brian P. Downey, Matthew T. Hardy, Eric N. Jin, Neeraj Nepal, D. Scott Katzer, David J. Meyer
  • Patent number: 10937649
    Abstract: Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InxGa1?xN, AlxGa1?xN, AlxIn1?xN, or AlxInyGa1?(x+y)N.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: March 2, 2021
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Publication number: 20210043824
    Abstract: Solid-state devices including a layer of a superconductor material epitaxially grown on a crystalline high thermal conductivity substrate, the superconductor material being one of TiNx, ZrNx, HfNx, VNx, NbNx, TaNx, MoNx, WNx, or alloys thereof, and one or more layers of a semiconducting or insulating or metallic material epitaxially grown on the layer of superconductor material, the semiconducting or insulating material being one of a Group III N material or alloys thereof or a Group 4b N material or SiC or ScN or alloys thereof.
    Type: Application
    Filed: March 6, 2019
    Publication date: February 11, 2021
    Applicants: Cornell University, The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Rusen Yan, Guru Bahadur Singh Khalsa, John Wright, H. Grace Xing, Debdeep Jena, D. Scott Katzer, Neeraj Nepal, Brian P. Downey, David J. Meyer
  • Publication number: 20200294792
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Application
    Filed: June 1, 2020
    Publication date: September 17, 2020
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Patent number: 10494738
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: December 3, 2019
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Publication number: 20190161887
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Application
    Filed: January 28, 2019
    Publication date: May 30, 2019
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia Wheeler, Charles R. Eddy, JR., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Patent number: 10266963
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: April 23, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Publication number: 20180040472
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Application
    Filed: September 7, 2017
    Publication date: February 8, 2018
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Patent number: 9773666
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Grant
    Filed: June 13, 2013
    Date of Patent: September 26, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemmullah A. Mahadik, Syed B Qadri, Michael J. Mehl
  • Publication number: 20150140789
    Abstract: Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InxGa1?xN, AlxGa1?xN, AlxIn1?xN, or AlxInyGa1?(x+y)N
    Type: Application
    Filed: December 16, 2014
    Publication date: May 21, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Publication number: 20140255705
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Application
    Filed: January 30, 2014
    Publication date: September 11, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, JR., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Publication number: 20130334666
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Application
    Filed: June 13, 2013
    Publication date: December 19, 2013
    Applicant: The Government of the United Stated of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl