Patents by Inventor Neil Dasgupta
Neil Dasgupta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230282804Abstract: A lithium-ion battery includes an electrode with a plurality of channels formed at least partially through its thickness. Each channel has a diameter in a range from 5 ?m to 100 ?m and/or is spaced apart from another channel by a distance in a range from 10 ?m to 200 ?m as measured between centerlines of the channels. The electrode may be an anode and includes carbonaceous material such as graphite and/or additional electrochemically active lithium host materials. The battery can be charged at a C-rate greater than 2 C.Type: ApplicationFiled: March 14, 2023Publication date: September 7, 2023Inventors: Kuan-Hung Chen, Neil Dasgupta, Jeffrey Sakamoto, Min Ji Namkoong
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Patent number: 11626583Abstract: An anode for a lithium ion battery is disclosed includes a first major face, a second major face that, together with the first major face, defines a thickness of the anode, and at least one carbonaceous electrochemically active lithium host material distributed between the first and second major faces of the anode. The at least one carbonaceous electrochemically active lithium host material is selected from the group consisting of graphite, hard carbon, or a blend of graphite and hard carbon. The anode additionally defines a plurality of vertical channels extending at least partially through the thickness of the anode. A lithium-ion batter that includes the disclosed anode and a method of charging a lithium-ion battery that includes the disclosed anode are also disclosed.Type: GrantFiled: June 11, 2020Date of Patent: April 11, 2023Assignee: The Regents of the University of MichiganInventors: Kuan-Hung Chen, Neil Dasgupta, Jeffrey Sakamoto, Min Ji Namkoong
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Publication number: 20230097272Abstract: A spatial atomic layer deposition apparatus that includes a depositor head having an active surface configured to discharge a flow of a first precursor gas, a flow of a second precursor gas, and a flow of an inert gas that separates the flow of the first precursor gas and the flow of the second precursor gas, a substrate plate that opposes the depositor head and has a support surface for retaining a build substrate, a plurality of gap detection sensors producing an output signal indicative of a distance between the active surface of the depositor head and the support surface of the substrate plate, and a controller that communicates with the plurality of gap detection sensors. The gap detection sensors permit a spatial orientation of the active surface of the depositor head and the support surface of the substrate plate to be determined in real-time and monitored.Type: ApplicationFiled: January 23, 2021Publication date: March 30, 2023Inventors: TAE H. CHO, ELLIS HERMAN, ORLANDO TREJO, MATTISON ROSE, LAUREN RANSOHOFF, NEIL DASGUPTA, KIRA BARTON, HYUNWOO PARK, ANDRE BROOKS
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Patent number: 11342176Abstract: An integrated electrohydrodynamic jet printing and spatial atomic layer deposition system for conducting nanofabrication includes an electrohydrodynamic jet printing station that includes an E-jet printing nozzle, a spatial atomic layer deposition station that includes a zoned ALD precursor gas distributor that discharges linear zone-separated first and second ALD precursor gases, a heatable substrate plate supported on a motion actuator controllable to move the substrate plate in three dimensions, and a conveyor on which the motion actuator is supported. The conveyor is operative to move the motion actuator between the electrohydrodynamic jet printing station and the spatial atomic layer deposition station so that the substrate plate is conveyable between a printing window of the E-jet printing nozzle and a deposition window of the zoned ALD precursor gas distributor, respectively. A method of conducting area-selective atomic layer deposition is also disclosed.Type: GrantFiled: July 23, 2020Date of Patent: May 24, 2022Assignee: The Regents of the University of MichiganInventors: Mattison Rose, Kira Barton, Neil Dasgupta, Lauren Ransohoff, Ellis Herman, Orlando Trejo, Carli Huber, Tae H. Cho, Eric Kazyak, Christopher P. Pannier
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Publication number: 20210043967Abstract: Disclosed are electrochemical devices, such as lithium metal batteries using a solid state electrolyte. A means is disclosed to achieve relevant charging rates without short-circuiting a cell of the electrochemical device by limiting the electrode area, positioning the electrode where least defect population exist and controlling the external variables for stable lithium electrodeposition. Also disclosed is a method for visualizing metal propagation from an anode into a solid state electrolyte during cycling of an electrochemical cell comprising the anode and the solid state electrolyte.Type: ApplicationFiled: August 10, 2020Publication date: February 11, 2021Inventors: Jeff Sakamoto, Maria Garcia Mendez, Neil Dasgupta, Eric Kazyak
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Publication number: 20210028006Abstract: An integrated electrohydrodynamic jet printing and spatial atomic layer deposition system for conducting nanofabrication includes an electrohydrodynamic jet printing station that includes an E-jet printing nozzle, a spatial atomic layer deposition station that includes a zoned ALD precursor gas distributor that discharges linear zone-separated first and second ALD precursor gases, a heatable substrate plate supported on a motion actuator controllable to move the substrate plate in three dimensions, and a conveyor on which the motion actuator is supported. The conveyor is operative to move the motion actuator between the electrohydrodynamic jet printing station and the spatial atomic layer deposition station so that the substrate plate is conveyable between a printing window of the E-jet printing nozzle and a deposition window of the zoned ALD precursor gas distributor, respectively. A method of conducting area-selective atomic layer deposition is also disclosed.Type: ApplicationFiled: July 23, 2020Publication date: January 28, 2021Inventors: Mattison Rose, Kira Barton, Neil Dasgupta, Lauren Ransohoff, Ellis Herman, Orlando Trejo, Carli Huber, Tae H. Cho, Erik Kazyak, Christopher P. Pannier
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Publication number: 20200395600Abstract: An anode for a lithium ion battery is disclosed includes a first major face, a second major face that, together with the first major face, defines a thickness of the anode, and at least one carbonaceous electrochemically active lithium host material distributed between the first and second major faces of the anode. The at least one carbonaceous electrochemically active lithium host material is selected from the group consisting of graphite, hard carbon, or a blend of graphite and hard carbon. The anode additionally defines a plurality of vertical channels extending at least partially through the thickness of the anode. A lithium-ion batter that includes the disclosed anode and a method of charging a lithium-ion battery that includes the disclosed anode are also disclosed.Type: ApplicationFiled: June 11, 2020Publication date: December 17, 2020Inventors: Kuan-Hung Chen, Neil Dasgupta, Jeffrey Sakamoto, Min Ji Namkoong
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Publication number: 20150357534Abstract: A method of encapsulating PbS quantum dots is provided that includes depositing, using atomic layer deposition (ALD), a first layer of TiO2 on a substrate, depositing, using ALD, a first layer of PbS quantum dots on the first layer of TiO2, and depositing, using ALD, an encapsulating layer of the TiO2 on the first layer of TiO2 and the first layer of PbS quantum dots, where the first layer of PbS quantum dots are encapsulated and separated by the first layer of TiO2 and the encapsulating layer of TiO2.Type: ApplicationFiled: June 9, 2014Publication date: December 10, 2015Inventors: Neil Dasgupta, Andrei T. Iancu, Hitoshi Iwadate, Michael C. Langston, Manca Logar, Friedrich B. Prinz, Orlando Trejo, Shicheng Xu
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Patent number: 9166074Abstract: A method of fabricating single-crystalline metal silicide nanowires for anti-reflective electrodes for photovoltaics is provided that includes exposing a surface of a metal foil to oxygen or hydrogen at an elevated temperature, and growing metal silicide nanowires on the metal foil surface by flowing a silane gas mixture over the metal foil surface at the elevated temperature, where spontaneous growth of the metal silicide nanowires occur on the metal foil surface, where the metal silicide nanowires are post treated for use as an electrode in a photovoltaic cell or used directly as the electrode in the photovoltaic cell.Type: GrantFiled: December 10, 2012Date of Patent: October 20, 2015Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Motor Co., LTD.Inventors: Neil Dasgupta, Hee Joon Jung, Andrei Iancu, Rainer J. Fasching, Friedrich B. Prinz, Hitoshi Iwadate, Shicheng Xu
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Patent number: 8883266Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.Type: GrantFiled: June 11, 2013Date of Patent: November 11, 2014Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Patents & Technologies North America, LLCInventors: Timothy P. Holme, Andrei Iancu, Hee Joon Jung, Michael C Langston, Munekazu Motoyama, Friedrich B. Prinz, Takane Usui, Hitoshi Iwadate, Neil Dasgupta, Cheng-Chieh Chao
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Publication number: 20140093654Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.Type: ApplicationFiled: June 11, 2013Publication date: April 3, 2014Inventors: Timothy P. Holme, Andrei Iancu, Hee Joon Jung, Michael C. Langston, Munekazu Motoyama, Friedrich B. Prinz, Takane Usui, Hitoshi Iwadate, Neil Dasgupta, Cheng-Chieh Chao
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Patent number: 8551868Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.Type: GrantFiled: March 24, 2011Date of Patent: October 8, 2013Assignees: The Board of Trustees of the Leland Stanford Junior Universit, Honda Patents & Technologies North America, LLCInventors: Timothy P. Holme, Andrei Iancu, Hee Joon Jung, Michael C Langston, Munekazu Motoyama, Friedrich B. Prinz, Takane Usui, Hitoshi Iwadate, Neil Dasgupta, Cheng-Chieh Chao
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Patent number: 8496999Abstract: Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.Type: GrantFiled: March 24, 2009Date of Patent: July 30, 2013Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Motor Co., LtdInventors: Neil Dasgupta, Friedrich B. Prinz, Timothy P. Holme, Stephen Walch, Wonyoung Lee, James F. Mack
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Patent number: 8499361Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.Type: GrantFiled: July 13, 2012Date of Patent: July 30, 2013Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Motor Co., LtdInventors: James F. Mack, Neil Dasgupta, Timothy P. Holme, Friedrich B. Prinz, Andrel Iancu, Wonyoung Lee
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Patent number: 8395042Abstract: Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.Type: GrantFiled: March 24, 2009Date of Patent: March 12, 2013Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Motor Co., LtdInventors: Neil Dasgupta, Friedrich B. Prinz, Timothy P. Holme, James F Mack
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Publication number: 20120284882Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.Type: ApplicationFiled: July 13, 2012Publication date: November 8, 2012Inventors: James F. Mack, Neil Dasgupta, Timothy P. Holme, Friedrich B. Prinz, Andrel Iancu, Wonyoung Lee
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Patent number: 8296859Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.Type: GrantFiled: March 23, 2009Date of Patent: October 23, 2012Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Motor Co., LtdInventors: James F. Mack, Neil Dasgupta, Timothy P. Holme, Friedrich B. Prinz, Andrei Iancu, Wonyoung Lee
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Patent number: 8168251Abstract: A method of making nanowire probes is provided. The method includes providing a template having a nanoporous structure, providing a probe tip that is disposed on top of the template, and growing nanowires on the probe tip, where the nanowires are grown from the probe tip along the nanopores, and the nanowires conform to the shape of the nanopores.Type: GrantFiled: October 10, 2008Date of Patent: May 1, 2012Assignees: The Board of Trustees of the Leland Stanford Junior University, Honda Motor Co., LtdInventors: Friedrich B. Prinz, Neil Dasgupta, Munekazu Motoyama
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Publication number: 20110269298Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.Type: ApplicationFiled: March 24, 2011Publication date: November 3, 2011Inventors: Timothy P. Holme, Andrei Iancu, Hee Joon Jung, Michael C Langston, Munekazu Motoyama, Friedrich B. Prinz, Takane Usui, Hitoshi Iwadate, Neil Dasgupta, Cheng-Chieh Chao
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Publication number: 20100240167Abstract: The current invention provides a method of fabricating quantum confinement (QC) in a solar cell that includes using atomic layer deposition (ALD) for providing at least one QC structure embedded into an intrinsic region of a p-i-n diode in the solar cell, where optical and electrical properties of the confinement structure are adjusted according to at least one dimension of the confinement structure. The QC structures can include quantum wells, quantum wires, quantum tubes, and quantum dots.Type: ApplicationFiled: March 23, 2010Publication date: September 23, 2010Inventors: Neil Dasgupta, Wonyoung Lee, Timothy P. Holme, Friedrich B. Prinz