Abstract: A method of making nanowire probes is provided. The method includes providing a template having a nanoporous structure, providing a probe tip that is disposed on top of the template, and growing nanowires on the probe tip, where the nanowires are grown from the probe tip along the nanopores, and the nanowires conform to the shape of the nanopores.

Abstract: Lateral nano-scale pattern control for atomic layer deposition can be provided by using a scanning tunneling microscope (SPM) tip to locally influence chemical reaction rates. An electric field and/or charge transfer can significantly reduce the potential energy barrier that affects reaction kinetics, and thereby significantly enhance reaction rates. By operating the ALD growth system in a regime where reaction rates without an electric field and/or charge transfer are negligible, deposition can be precisely controlled to occur only at locations defined by the SPM tip. Alternatively, the SPM tip can be used to locally inhibit ALD growth.

Abstract: Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.

Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

Abstract: Improved tip-patterned atomic layer deposition (ALD) is provided by using a scanning probe microscope (SPM) tip to define an oxide pattern in a self-assembled monolayer deposited on a substrate. The oxide pattern can directly define the ALD deposition pattern. Alternatively, the oxide pattern can be removed (e.g., with a chemical etch), and the resulting exposed substrate pattern can be used to define the ALD deposition pattern.