Patents by Inventor Neil Quinn

Neil Quinn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11721767
    Abstract: A transistor including a channel layer including an oxide semiconductor material and methods of making the same. The transistor includes a channel layer having a first oxide semiconductor layer having a first oxygen concentration, a second oxide semiconductor layer having a second oxygen concentration and a third oxide semiconductor layer having a third oxygen concentration. The second oxide semiconductor layer is located between the first semiconductor oxide layer and the third oxide semiconductor layer. The second oxygen concentration is lower than the first oxygen concentration and the third oxygen concentration.
    Type: Grant
    Filed: April 14, 2021
    Date of Patent: August 8, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Kuo Chiang, Hung-Chang Sun, TsuChing Yang, Sheng-Chih Lai, Yu-Wei Jiang, Feng-Cheng Yang, Neil Quinn Murray
  • Publication number: 20230062099
    Abstract: A drive train, including: a first electric motor; a second electric motor; and a transmission system including a first input shaft driveably connected to the first electric motor, a second input shaft driveably connected to the second electric motor, a first gear train including a first gear element rotatably mounted on the first input shaft and a second gear element rotatably mounted on the second input shaft, a second gear train including a third gear element rotatably mounted on the first input shaft and a fourth gear element rotatably mounted on the second input shaft, a gear selector assembly arranged to selectively lock either the first and third gear elements for rotation with the first input shaft or the second and fourth gear elements for rotation with the second input shaft.
    Type: Application
    Filed: February 6, 2020
    Publication date: March 2, 2023
    Inventor: Neil QUINN
  • Publication number: 20230034708
    Abstract: A thin film transistor, a semiconductor device having a thin film transistor and a method of fabricating a thin film transistor are provided. The thin film transistor includes a gate metal; a gate dielectric layer disposed on the gate metal; a semiconductor layer disposed on the gate dielectric layer; an interlayer dielectric disposed on the semiconductor layer and having a contact hole over the semiconductor layer; a source/drain metal disposed in the contact hole; a first liner disposed between the interlayer dielectric and the source/drain metal; and a second liner disposed between the first liner and the source/drain metal and being in contact with the semiconductor layer in the contact hole.
    Type: Application
    Filed: July 30, 2021
    Publication date: February 2, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Neil Quinn Murray, Hung-Wei Li, Mauricio MANFRINI, Sai-Hooi Yeong
  • Publication number: 20230029955
    Abstract: Disclosed transistor structures include a gate electrode, an active layer, a gate dielectric layer separating the active layer from the gate electrode, a source electrode, a drain electrode, and a hydrogen-rich material layer separating the source electrode and the drain electrode from the active layer. The presence of hydrogen in the hydrogen-rich material layer may act to reduce contact resistances and Schottky barriers between the source electrode and the active layer, and between the drain electrode and the active layer, thus leading to improved device performance. The disclosed transistor structures may be formed in a BEOL process and may be incorporated with other BEOL circuit components. As such, the disclosed transistor structures may include materials that may be processed at low temperatures and thus, may not damage previously fabricated devices.
    Type: Application
    Filed: May 6, 2022
    Publication date: February 2, 2023
    Inventors: Neil Quinn Murray, Mauricio Manfrini
  • Publication number: 20220352385
    Abstract: A transistor device includes a first source/drain region and a second source/drain region spaced apart from each other; a channel layer electrically connected to the first and second source/drain regions; a gate insulator layer; a gate electrode isolated from the channel layer by the gate insulator layer; and a UV-attenuating layer disposed on the channel layer to protect the channel layer from characteristic degradation caused by UV light.
    Type: Application
    Filed: April 28, 2021
    Publication date: November 3, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Katherine H. CHIANG, Neil Quinn MURRAY, Ming-Yen CHUANG, Chung-Te LIN
  • Publication number: 20220320347
    Abstract: A semiconductor structure is provided. The semiconductor structure may include a transistor structure, the transistor structure may include a gate region arranged over an upper surface of a substrate and extending substantially in a first direction that is perpendicular to the upper surface of the substrate; a first source/drain region over the upper surface of the substrate; a second source/drain region over the upper surface of the substrate; and a channel region vertically extending in the first direction between the first source/drain region and the second source/drain region, wherein the channel region comprises an oxide semiconductor material. Along the first direction, the gate region covers a sidewall of the channel region.
    Type: Application
    Filed: July 16, 2021
    Publication date: October 6, 2022
    Inventors: Neil Quinn Murray, Katherine H. Chiang, Chung-Te Lin
  • Publication number: 20220120321
    Abstract: A transmission system, including: a first input shaft (1) that is arranged to receive drive directly from a drive source (80); a second input shaft (3) that is arranged to receive drive from the drive source (80) via a drive interruption means (86), such as a friction clutch device; a first lay shaft (5); a gear element (19) rotatably mounted on the first input shaft (1); a gear element (15) mounted on the first lay shaft (5); a first selector assembly (29) arranged to selectively lock the gear element (19) rotatably mounted on the first input shaft (1) for rotation with the first input shaft (1) and to selectively lock the gear element (15) mounted on the first lay shaft (5) for rotation with the first input shaft (1), the first selector assembly (29) comprising a single engagement ring (35) that includes a first side (35a) having a first set of engagement elements (28a), wherein each engagement element (28a) has a drive face (43a) arranged to drivingly engage in a first rotational direction a first set of d
    Type: Application
    Filed: September 2, 2019
    Publication date: April 21, 2022
    Inventor: Neil QUINN
  • Patent number: 9303731
    Abstract: A transmission system including a first input shaft (1) that is arranged to receive drive directly from a drive source (80), and a second input shaft (3) that is arranged to receive drive from the drive source via a drive interruption means (86), such as a friction clutch device, a first gear element (15) rotatable relative to the first input shaft (1) and a selector assembly (29) for selectively locking the first gear element (15) for rotation with the first input shaft (1) from operational modes that include the following modes: lock the gear element for rotation with the first input shaft in forward and reverse torque directions, lock the gear element for rotation with the first input shaft in the forward torque direction and not lock in the reverse torque direction; and lock the gear element with rotation with the first input shaft in the reverse torque direction and not lock in the forward torque direction. A method of performing a power on down shift is also provided.
    Type: Grant
    Filed: May 25, 2012
    Date of Patent: April 5, 2016
    Assignee: ZEROSHIFT TRANSMISSIONS LIMITED
    Inventors: William Wesley Martin, Richard Neil Quinn
  • Publication number: 20140326093
    Abstract: A transmission system including a first input shaft (1) that is arranged to receive drive directly from a drive source (80), and a second input shaft (3) that is arranged to receive drive from the drive source via a drive interruption means (86), such as a friction clutch device, a first gear element (15) rotatable relative to the first input shaft (1) and a selector assembly (29) for selectively locking the first gear element (15) for rotation with the first input shaft (1) from operational modes that include the following modes: lock the gear element for rotation with the first input shaft in forward and reverse torque directions, lock the gear element for rotation with the first input shaft in the forward torque direction and not lock in the reverse torque direction; and lock the gear element with rotation with the first input shaft in the reverse torque direction and not lock in the forward torque direction. A method of performing a power on down shift is also provided.
    Type: Application
    Filed: May 25, 2012
    Publication date: November 6, 2014
    Applicant: ZEROSHIFT TRANSMISSIONS LIMITED
    Inventors: William Wesley Martin, Richard Neil Quinn
  • Patent number: 8001021
    Abstract: A system for compensation query management includes one or more processors and memory coupled to the processors. The memory stores program instructions executable by the processors to implement an analysis tool. The analysis tool is configured to access representations of a plurality of tax returns and extract compensation-related data from the tax returns. The analysis tool is further configured to compile a version of the compensation-related data into a data store, and access the data store to prepare a response to a compensation query.
    Type: Grant
    Filed: May 16, 2006
    Date of Patent: August 16, 2011
    Assignee: Intuit Inc.
    Inventors: Christopher Neil Quinn, Anthony L. Creed, Kenichi Mori
  • Patent number: 5695462
    Abstract: An insufflation needle apparatus which creates a pneumoperitoneum during the preparation of a patient for endoscopic surgical procedures is disclosed. The insufflation needle apparatus is characterized by a helical needle having a central helical passageway for gas therethrough. The helical needle is associated with a guide support member which maintains the helical needle in position for insertion into a patient while at the same time permitting free rotation of the helical needle about the central longitudinal axis of the support member independent of movement of the support member. In this manner, an upward traction force can be exerted on the support member to gently pull the wall of a patient's body cavity upwardly away from vulnerable internal organs while at the same time a downward force can be exerted on the helical needle while it is rotated in order to penetrate the peritoneum with the needle.
    Type: Grant
    Filed: January 18, 1996
    Date of Patent: December 9, 1997
    Assignee: Conmed Corporation
    Inventors: Maz Sutcu, John Gentelia, Neil Quinn