Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.

Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.

Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.

Abstract: An sports shoe that changes shape in two ways. Firstly, a change of shape occurs when the sports shoe is used to kick a ball with the toes. This change of shape maximizes the area of contact with a ball that is kicked with the toes. Secondly, a change of shape occurs when the front of the sports shoe rotates during contact with a kicked ball.

Abstract: An article of sports footwear that changes shape in two ways. Firstly, a change of shape occurs when such footwear is used to kick a ball with the toes. This change of shape maximizes the area of contact with a ball that is kicked with the toes. Secondly, a change of shape occurs when the article of sports footwear bends during running. This change of shape shortens the entire length of the article of sports footwear in order to prevent tripping. A flexible toe cap encases the foot and parts of a traditional article of footwear and attaches at or near the tarsometatarsal joint of a wearer.

Abstract: An article of sports footwear that changes shape in two ways. Firstly, a change of shape occurs when such footwear is used to kick a ball with the toes. This change of shape maximizes the area of contact with a ball that is kicked with the toes. Secondly, a change of shape occurs when the article of sports footwear bends during running. This change of shape shortens the entire length of the article of sports footwear in order to prevent tripping. A flexible toe cap encases the foot and parts of a traditional article of footwear and attaches at or near the tarsometatarsal joint of a wearer.

Abstract: A sensor with a sensor housing or body, a plastic molded table positioned in the sensor housing; and a counter electrode carried on a first end of the table.

Abstract: The sling comprises at least one strap defining a loop. The loop is to be positioned over a user's first shoulder and under a user's second shoulder. A first attaching member couples a first part of the loop to a first part of a weapon. A cam buckle is coupled to a second part of the loop and is for adjusting the size of the loop when a first force acts on a lever of the cam buckle. A trigger snap hook is coupled to a third part of the loop and is for removably coupling the loop to a second part of a weapon. A gate of the trigger snap hook is configured to open when a second force acts on a trigger of the trigger snap hook. A linking member couples the trigger of the trigger snap hook to the lever of cam buckle.

Abstract: A memory system or flash card includes a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects can be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements are used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements leads to improved memory management and data management. That action includes calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.

Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.

Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.

Abstract: The sling comprises at least one strap defining a loop. The loop is to be positioned over a user's first shoulder and under a user's second shoulder. A first attaching member couples a first part of the loop to a first part of a weapon. A cam buckle is coupled to a second part of the loop and is for adjusting the size of the loop when a first force acts on a lever of the cam buckle. A trigger snap hook is coupled to a third part of the loop and is for removably coupling the loop to a second part of a weapon. A gate of the trigger snap hook is configured to open when a second force acts on a trigger of the trigger snap hook. A linking member couples the trigger of the trigger snap hook to the lever of cam buckle.

Abstract: A process and system are disclosed that identifies tools and training regimens that best assist the golfer to improve the golfer's own golf swing and golf game. The process and system provide personal perspective on clubs, training aids, and instructors, as well as provide a data-driven, fact-based review of each training mode and method among several crowd-sourced globally-used training modes and methods of other golfers. The process and system identify a set of best practices for the golfer to improve golf swing and golf game based on scaled insights derived from the crowd-sourced golf information in light of the personal perspective on clubs, training aids, and instructors. In some embodiments, the system and process are implemented as a website and software applications that allow golfers to interact with the system and perform the methods in order to improve golf swing and golf game.

Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.

Abstract: Embodiments of the disclosure relate to capillary controlled gas sensors comprising a top cap assembly, wherein the top cap assembly is operable to reduce the effects of condensation and pressure changes on the effectiveness of the gas sensor. The top cap assembly comprises a capillary controlled gas flow path, a bulk flow control assembly, and a raised boss surrounded by a moat.

Abstract: Disclosed are techniques and apparatuses for implementing device-based application security. These techniques enable a computing device to assign a security level from a hierarchy of security levels to an application. Once the security level is assigned to the application, authentication techniques associated with the security level can be initiated in response to a request to launch the application. When an indication is received that the security level for the application has been satisfied, the application can then be launched, availing a user of the application's full functionality.

Abstract: A method and system are disclosed for improved block erase cycle life prediction and block management in a non-volatile memory. The method includes the storage device tracking information relating to a first erase cycle count at which the block erase time exceeded a predetermined threshold relative to a first erase cycle at which this occurred in other blocks. Blocks having a later relative erase cycle at which the erase time threshold is exceeded are assumed to have a greater erase cycle life than those that need to exceed the erase time threshold at an earlier erase cycle. This information is used to adjust wear leveling in the form of free block selection, garbage collection block selection and other block management processes. Alternatively or in combination, the predicted erase cycle life information is used to adjust program and/or erase parameters such as erase voltage and time.

Abstract: An electrochemical detector includes a carbon based element located between a separator and a current collector of an adjacent electrode. Elements can take the form of a carbon fabric located between the separator and the collector, or a linear, or, circular carbon deposit on a surface of the separator adjacent to the respective current collector. Other conductive coatings including gold, platinum or transition metals, as well as carbon, can be deposited directly onto a porous substrate, such as a masked separator material.

Abstract: A method for analyzing a read error event is provided comprising reading a page of data stored in memory, determining a read error event for the page of data, and identifying a scope of the read error event in the memory. In another embodiment, a method for performing a preliminary read error recovery is provided comprising reading a first data unit from memory and identifying a bit error rate for a first data unit with a correction engine, determining that the bit error rate is above a threshold, accessing a data structure including entries identifying data units and read error event information associated with the data units, identifying a second data unit in an entry that matches the first data unit, and performing a preliminary read error recovery process on the first data unit using the information in the entry to reduce the bit error rate below the threshold.

Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.