Abstract: The present invention relates to new pharmaceutical salts and/or co-crystals of sepiapterin which exhibit improved properties. In particular, the invention relates to salts of sepiapterin with improved stability. The invention also relates to pharmaceutical compositions including a pharmaceutically effective amount of one or more salts and/or co-crystals of sepiapterin, as well as methods of treating tetrahydrobiopterin-related disorders including administration of a sepiapterin salt and/or co-crystal of the invention to a subject in need thereof.

Abstract: The present invention features compositions including sepiapterin, or a pharmaceutically acceptable salt thereof, and methods for the treatment of BH4-related disorders. In some embodiments, these compositions and methods result in an increase in plasma. CSF, and/or brain exposure of sepiapterin.

Abstract: The present invention features compositions including sepiapterin, or a pharmaceutically acceptable salt thereof, and methods for the treatment of BH4-related disorders. In some embodiments, these compositions and methods result in an increase in plasma exposure of BH4.

Abstract: The present invention features compositions including sepiapterin, or a pharmaceutically acceptable salt thereof, and methods for the treatment of BH4-related disorders. In some embodiments, these compositions and methods result in an increase in plasma, CSF, and/or brain exposure of sepiapterin.

Abstract: A spin-transfer torque (STT) magnetoresistive memory device includes a first electrode, a second electrode, and a magnetic tunnel junction located between the first electrode and the second electrode. The magnetic tunnel junction includes a reference layer having a fixed magnetization direction, a free layer stack, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer stack. The free layer stack has a total thickness of less than 2 nm, and contains in order, a proximal ferromagnetic layer located proximal to the nonmagnetic tunnel barrier layer, a first non-magnetic metal sub-monolayer, an intermediate ferromagnetic layer, a second non-magnetic metal sub-monolayer, and a distal ferromagnetic layer.

Abstract: The present invention features compositions including sepiapterin, or a pharmaceutically acceptable salt thereof, and methods for the treatment of BH4-related disorders. In some embodiments, these compositions and methods result in an increase in plasma exposure of BH4.

Abstract: The invention features methods of treating a SARS-CoV-2 infection in a subject, the method comprising administering to the subject an effective amount of sepiapterin or a pharmaceutically acceptable salt thereof.

Abstract: The invention features methods of treating glioblastoma in a subject, the method comprising administering to the subject an effective amount of sepiapterin or a pharmaceutically acceptable salt thereof.

Abstract: The present invention features compositions including sepiapterin, or a pharmaceutically acceptable salt thereof, and methods for the treatment of BH4-related disorders. In some embodiments, these compositions and methods result in an increase in plasma, CSF, and/or brain exposure of sepiapterin.

Abstract: The present invention features methods for treating Parkinson's disease using sepiapterin, or a pharmaceutically acceptable salt thereof.

Abstract: The present invention features compositions including sepiapterin, or a pharmaceutically acceptable salt thereof, and methods for the treatment of BH4-related disorders. In some embodiments, these compositions and methods result in an increase in plasma, CSF, and/or brain exposure of sepiapterin.

Abstract: The invention features methods of reducing the blood phenylalanine concentration in a subject by administering sepiapterin, or a pharmaceutically acceptable salt thereof.

Abstract: In one embodiment, the invention discloses a method for adapting educational content. The method comprises generating data for each of a plurality of students, the data pertaining to an aspect of the student's interaction with an educational system; combining the generated data to form a combined data set; analyzing the combined data set to identify clusters, each representing similar students according to a mathematical model; and adapting the educational system to provide a customized learning experience for a particular student based on an identified cluster.

Abstract: The invention provides methods for treating radiation exposure in a subject by administering sepiapterin, tetrahydrobiopterin, or dihydrobiopterin.

Abstract: A spin-transfer torque (STT) magnetoresistive memory device includes a first electrode, a second electrode, and a magnetic tunnel junction located between the first electrode and the second electrode. The magnetic tunnel junction includes a reference layer having a fixed magnetization direction, a free layer stack, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer stack. The free layer stack has a total thickness of less than 2 nm, and contains in order, a proximal ferromagnetic layer located proximal to the nonmagnetic tunnel barrier layer, a first non-magnetic metal sub-monolayer, an intermediate ferromagnetic layer, a second non-magnetic metal sub-monolayer, and a distal ferromagnetic layer.

Abstract: A magnetic memory device includes a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode. The layer stack includes a reference layer, a tunnel barrier layer, a free layer, and a magnetoelectric multiferroic layer including at least one crystalline grain. The magnetization of the magnetoelectric multiferroic layer may be axial, canted, or in-plane. For axial or canted magnetization of the magnetoelectric multiferroic layer, a deterministic switching of the free layer may be achieved through coupling with the axial component of magnetization of the magnetoelectric multiferroic layer. Alternatively, the in-plane magnetization of the magnetoelectric multiferroic layer may be employed to induce precession of the magnetization angle of the free layer.

Abstract: A magnetic memory device includes a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode. The layer stack includes a reference layer, a tunnel barrier layer, a free layer, and a magnetoelectric multiferroic layer including at least one crystalline grain. The magnetization of the magnetoelectric multiferroic layer may be axial, canted, or in-plane. For axial or canted magnetization of the magnetoelectric multiferroic layer, a deterministic switching of the free layer may be achieved through coupling with the axial component of magnetization of the magnetoelectric multiferroic layer. Alternatively, the in-plane magnetization of the magnetoelectric multiferroic layer may be employed to induce precession of the magnetization angle of the free layer.

Abstract: A magnetic memory device includes a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode. The layer stack includes a reference layer, a tunnel barrier layer, a free layer, and a magnetoelectric multiferroic layer including at least one crystalline grain. The magnetization of the magnetoelectric multiferroic layer may be axial, canted, or in-plane. For axial or canted magnetization of the magnetoelectric multiferroic layer, a deterministic switching of the free layer may be achieved through coupling with the axial component of magnetization of the magnetoelectric multiferroic layer. Alternatively, the in-plane magnetization of the magnetoelectric multiferroic layer may be employed to induce precession of the magnetization angle of the free layer.

Abstract: A magnetic memory device includes a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode. The layer stack includes a reference layer, a tunnel barrier layer, a free layer, and a magnetoelectric multiferroic layer including at least one crystalline grain. The magnetization of the magnetoelectric multiferroic layer may be axial, canted, or in-plane. For axial or canted magnetization of the magnetoelectric multiferroic layer, a deterministic switching of the free layer may be achieved through coupling with the axial component of magnetization of the magnetoelectric multiferroic layer. Alternatively, the in-plane magnetization of the magnetoelectric multiferroic layer may be employed to induce precession of the magnetization angle of the free layer.

Abstract: A system may use a machine-learned model to determine whether to classify a sequence of one or more words within a first document that is being edited as a candidate hyperlink based at least in part on context associated with the first document. In response to classifying the sequence of one or more words as the candidate hyperlink, the system may use the machine-learned model and based at least in part on the sequence of one or more words and the context to determine one or more candidate document to be hyperlinked from the sequence of one or more words. In response to receiving an indication of a second document being selected out of the one or more candidate documents, the system may modify the first document to associate the sequence of one or more words with a hyperlink to the second document.