Abstract: An epitaxial substrate having a 2D material interposer, the epitaxial substrate extending along an epitaxial interface direction, wherein the epitaxial substrate includes: a polycrystalline base substrate having a superficial layer, a wafer bevel, and a back surface, wherein a difference in coefficient of thermal expansion between the polycrystalline base substrate and MN or GaN is not greater than 1.5×106° C.?1 in a direction parallel to the epitaxial interface; a multi-orientation 2D ultra-thin material interposer arranged on the superficial layer of the polycrystalline base substrate, wherein the multi-orientation 2D ultra-thin material interposer has a top layer, a lattice constant of the top layer being highly matched with that of AlN, AlGaN, or GaN; and an AlN, AlGaN, or GaN-based epitaxial layer, which is epitaxially grown on a portion of the multi-orientation 2D ultra-thin material interposer distant from the polycrystalline base substrate.

Abstract: A semiconductor device includes an interposer having a first side and a second side opposite to the first side, at least one active chip mounted on the first side within a chip mounting area through a plurality of first bumps, at least one dummy chip mounted on the first side within a peripheral area being adjacent to the chip mounting area, a molding compound disposed on the first side. The molding compound covers the at least one active chip and the at least one dummy chip. A plurality of solder bumps is mounted on the second side.

Abstract: A semiconductor device includes a substrate, and interposer layers. The substrate has a first region, and a second region adjacent the first region. The interposer layers are sequentially stacked on the substrate. Each of the interposer layers has an active region and an open region, are respectively correspond to the first region and the second region of the substrate. Each of the interposer layers includes a device layout pattern, and a stress release structure. The device layout pattern is formed within the active region. The stress release structure is formed within the open region, and includes openings.

Abstract: A semiconductor device includes an interposer having a first side and a second side opposite to the first side, at least one active chip mounted on the first side within a chip mounting area through a plurality of first bumps, at least one dummy chip mounted on the first side within a peripheral area being adjacent to the chip mounting area, a molding compound disposed on the first side. The molding compound covers the at least one active chip and the at least one dummy chip. A plurality of solder bumps is mounted on the second side.

Abstract: A semiconductor device includes an interposer having a first side and a second side opposite to the first side, at least one active chip mounted on the first side within a chip mounting area through a plurality of first bumps, at least one dummy chip mounted on the first side within a peripheral area being adjacent to the chip mounting area, a molding compound disposed on the first side. The molding compound covers the at least one active chip and the at least one dummy chip. A plurality of solder bumps is mounted on the second side.

Abstract: A package structure and a method for fabricating thereof are provided. The package structure includes a substrate, a first connector, a redistribution layer, a second connector, and a chip. The first connector is disposed over the substrate. The redistribution layer is directly disposed over the first connector, and is connected to the substrate by the first connector. The redistribution layer includes a block layer, and a metal layer over the block layer. The second connector is directly disposed over the redistribution layer, and the chip is connected to the redistribution layer by the second connector.

Abstract: A package structure and a method for fabricating thereof are provided. The package structure includes a substrate, a first connector, a redistribution layer, a second connector, and a chip. The first connector is disposed over the substrate. The redistribution layer is directly disposed over the first connector, and is connected to the substrate by the first connector. The redistribution layer includes a block layer, and a metal layer over the block layer. The second connector is directly disposed over the redistribution layer, and the chip is connected to the redistribution layer by the second connector.

Abstract: A package structure and a method for fabricating thereof are provided. The package structure includes a substrate, a first connector, a redistribution layer, a second connector, and a chip. The first connector is disposed over the substrate. The redistribution layer is directly disposed over the first connector, and is connected to the substrate by the first connector. The redistribution layer includes a block layer, and a metal layer over the block layer. The second connector is directly disposed over the redistribution layer, and the chip is connected to the redistribution layer by the second connector.

Abstract: A semiconductor device includes an interposer having a first side and a second side opposite to the first side, at least one active chip mounted on the first side within a chip mounting area through a plurality of first bumps, at least one dummy chip mounted on the first side within a peripheral area being adjacent to the chip mounting area, a molding compound disposed on the first side. The molding compound covers the at least one active chip and the at least one dummy chip. A plurality of solder bumps is mounted on the second side.

Abstract: A semiconductor device includes an interposer having a first side and a second side opposite to the first side, at least one active chip mounted on the first side within a chip mounting area through a plurality of first bumps, at least one dummy chip mounted on the first side within a peripheral area being adjacent to the chip mounting area, a molding compound disposed on the first side. The molding compound covers the at least one active chip and the at least one dummy chip. A plurality of solder bumps is mounted on the second side.

Abstract: A semiconductor device includes a substrate, and interposer layers. The substrate has a first region, and a second region adjacent the first region. The interposer layers are sequentially stacked on the substrate. Each of the interposer layers has an active region and an open region, are respectively correspond to the first region and the second region of the substrate. Each of the interposer layers includes a device layout pattern, and a stress release structure. The device layout pattern is formed within the active region. The stress release structure is formed within the open region, and includes openings.

Abstract: A semiconductor device includes an interposer having a first side and a second side opposite to the first side, at least one active chip mounted on the first side within a chip mounting area through a plurality of first bumps, at least one dummy chip mounted on the first side within a peripheral area being adjacent to the chip mounting area, a molding compound disposed on the first side. The molding compound covers the at least one active chip and the at least one dummy chip. A plurality of solder bumps is mounted on the second side.

Abstract: A semiconductor device includes a substrate, and interposer layers. The substrate has a first region, and a second region adjacent the first region. The interposer layers are sequentially stacked on the substrate. Each of the interposer layers has an active region and an open region, which respectively correspond to the first region and the second region of the substrate. Each of the interposer layers includes a device layout pattern, and a stress release structure. The device layout pattern is formed within the active region. The stress release structure is formed within the open region, and includes openings.

Abstract: A semiconductor device includes an interposer having a first side and a second side opposite to the first side, at least one active chip mounted on the first side within a chip mounting area through a plurality of first bumps, at least one dummy chip mounted on the first side within a peripheral area being adjacent to the chip mounting area, a molding compound disposed on the first side. The molding compound covers the at least one active chip and the at least one dummy chip. A plurality of solder bumps is mounted on the second side.

Abstract: A package structure and a method for fabricating thereof are provided. The package structure includes a substrate, a first connector, a redistribution layer, a second connector, and a chip. The first connector is disposed over the substrate. The redistribution layer is directly disposed over the first connector, and is connected to the substrate by the first connector. The redistribution layer includes a block layer, and a metal layer over the block layer. The second connector is directly disposed over the redistribution layer, and the chip is connected to the redistribution layer by the second connector.

Abstract: A metal-insulator-metal (MIM) capacitor is disclosed. The MIM capacitor includes a substrate having a first dielectric layer thereon and a bottom electrode embedded in the first dielectric layer. The bottom electrode includes a metal plate and a three-dimensional (3D) metal structure protruding from a top surface of the metal plate. A second dielectric layer surrounds the 3D metal structure. A capacitor dielectric layer covers the 3D metal structure and the second dielectric layer. A top electrode is disposed on the capacitor dielectric layer. The top electrode has fins that interdigitate with the 3D metal structure.

Abstract: A package structure and a method for fabricating thereof are provided. The package structure includes a substrate, a first connector, a redistribution layer, a second connector, and a chip. The first connector is disposed over the substrate. The redistribution layer is directly disposed over the first connector, and is connected to the substrate by the first connector. The redistribution layer includes a block layer, and a metal layer over the block layer. The second connector is directly disposed over the redistribution layer, and the chip is connected to the redistribution layer by the second connector.

Abstract: A method for fabricating a semiconductor package, the method includes forming at least one conductive via having a first end and a second end opposite the first end in a wafer, in which the wafer has a first surface and a second surface opposite the first surface, and the first end of the at least one conductive via is exposed of the first surface of the wafer; grinding the second surface of the wafer to form an inner portion and a ring portion surrounding the inner portion of the wafer, wherein the inner portion has a thinner thickness than that of the ring portion; and etching the inner portion to expose the second end of the at least one conductive via.

Abstract: A method for fabricating a semiconductor package, the method includes forming at least one conductive via having a first end and a second end opposite the first end in a wafer, in which the wafer has a first surface and a second surface opposite the first surface, and the first end of the conductive via is exposed of the first surface of the wafer; grinding the second surface of the wafer to form an inner portion and a ring portion surrounding the inner portion of the wafer, wherein the inner portion has a thinner thickness than that of the ring portion; and etching the inner portion to expose the second end of the conductive via.

Abstract: A semiconductor device includes a substrate, and interposer layers. The substrate has a first region, and a second region adjacent the first region. The interposer layers are sequentially stacked on the substrate. Each of the interposer layers has an active region and an open region, which are respectively corresponded to the first region and the second region of the substrate. Each of the interposer layers includes a device layout pattern, and a stress release structure. The device layout pattern is formed within the active region. The stress release structure is formed within the open region, and includes openings.