Abstract: A process for cheaply fabricating a substantially single crystal or a polycrystalline semiconductor structure on a host substrate. The process begins by depositing a layer of wide band gap nitride material 10, such as gallium nitride, aluminum nitride and/or indium nitride, on a sapphire substrate 11. The semiconductor structure 14 is then grown on the nitride layer. Next, the host substrate 15 is attached with a bonding agent to an exposed surface area of the semiconductor structure 14. The sapphire substrate is lifted off by irradiation in which nitrogen is dissociated from the nitride layer.

Abstract: A color display device which may be used as a gallium nitride (LED) light emitting diode based traffic light is disclosed. Unlike previous large GaN based display devices, which have been built up from numerous small display elements formed on sapphire substrates, the disclosed device preferably uses an entire monolithic silicon wafer as both a substrate and for connection as a whole as a conducting first electrode, a light emitting layered structure of GaN-based materials over the entire monolithic silicon substrate, and a substantially transparent metallic second electrode layer over the layered structure. In order to emit desired traffic light colors (e.g. yellow, red), a color conversion layer is disposed over the transparent metallic electrode layer.

Abstract: This invention provides a novel hybrid organic-inorganic semiconductor light emitting diode. The device consists of an electroluminescent layer and a photoluminescent layer. The electroluminescent layer is an inorganic GaN light emitting diode structure that is electroluminescent in the blue or ultraviolet (uv) region of the electromagnetic spectrum when the device is operated. The photoluminescent layer is a photoluminescent organic thin film such as tris-(8-hydroxyquinoline) Al, Alq3, deposited onto the GaN LED and which has a high photoluminescence efficiency. The uv emission from the electroluminescent region excites the Alq3 which photoluminesces in the green. Such a photoconversion results in a light emitting diode that operates in the green (in the visible range). Other colors such as blue or red may be obtained by appropriately doping the Alq3. Furthermore, other luminescent organics in addition to Alq3 may be used to directly convert the uv or blue to other wavelengths of interest.

Abstract: This invention provides a novel hybrid organic-inorganic semiconductor light emitting diode. The device consists of an electroluminescent layer and a photoluminescent layer. The electroluminescent layer is an inorganic GaN light emitting diode structure that is electroluminescent in the blue or ultraviolet (uv) region of the electromagnetic spectrum when the device is operated. The photoluminescent layer is a photoluminescent organic thin film such as tris-(8-hydroxyquinoline) Al, Alq3, deposited onto the GaN LED and which has a high photoluminescence efficiency. The uv emission from the electroluminescent region excites the Alq3 which photoluminesces in the green. Such a photoconversion results in a light emitting diode that operates in the green (in the visible range). Other colors such as blue or red may be obtained by appropriately doping the Alq3. Furthermore, other luminescent organics in addition to Alq3 may be used to directly convert the uv or blue to other wavelengths of interest.

Abstract: A magneto-optic memory and a magnetic material is described incorporating a polarized light beam directed towards a magnetic material and an analyzer for intercepting the polarized light beam after passing through the magnetic material or after being reflected by the magnetic material. The magnetic material includes a matrix of metal such as iron, cobalt, nickel, and alloys thereof and a plurality of separated phases distributed in the matrix such as EuS, EuO, EuOTb, PtMnSb, MnAs, MnBi, MnSb, CrO.sub.2, CrTe, GdN, Gd.sub.4 C, other compounds of a rare earth element and manganese compounds. Terbium or neodymium may be dissolved in the matrix of metal and in the plurality of separated phases. The invention overcomes the problem of providing a magnetic material having a Curie point above room temperature, a square perpendicular hysteresis loop at room temperature, a large magneto-optic rotation at the wavelength of interest and a deposition temperature suitable depositing on polymer substrates.