Patents by Inventor Nianqi YAO

Nianqi YAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220100982
    Abstract: A fingerprint identification module, a method for manufacturing the fingerprint identification module, a display substrate and a display device are provided. The fingerprint identification module includes a TFT, a photosensitive sensor, and a connection electrode configured to connect the TFT to the photosensitive sensor; the TFT includes an active layer; the active layer and the connection electrode are formed through a same semiconductor layer pattern, the semiconductor layer pattern includes a first semiconductor pattern and a second semiconductor pattern, the first semiconductor pattern is used as the active layer, and the second semiconductor pattern is subjected to conductor-formation treatment and used as the connection electrode.
    Type: Application
    Filed: February 9, 2021
    Publication date: March 31, 2022
    Inventors: Nianqi YAO, Lubin SHI
  • Publication number: 20210217784
    Abstract: An array substrate, a method for manufacturing an array substrate, and a display panel are provided. The array substrate includes: a base substrate; a thin film transistor on the base substrate; and a PIN diode on a side of the thin film transistor away from the base substrate, in a direction running away the base substrate from the thin film transistor, the PIN diode including a first electrical conduction type semiconductor layer and an intrinsic semiconductor layer and a second electrical conduction type semiconductor layer stacked in sequence, wherein a material from which the first electrical conduction type semiconductor layer is made includes one or more of following materials: metal oxide, metal sulfide, metal selenide, metal nitride, metal phosphide, or metal arsenide.
    Type: Application
    Filed: November 21, 2019
    Publication date: July 15, 2021
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhengliang Li, Jiayu He, Hehe Hu, Wenlin Zhang, Song Liu, Xiaochen Ma, Nianqi Yao, Jie Huang
  • Publication number: 20210091223
    Abstract: An oxide thin film transistor includes an oxide active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the oxide active layer perpendicular to a thickness direction of the oxide active layer, and is in contact with the oxide active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the oxide active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material.
    Type: Application
    Filed: May 18, 2020
    Publication date: March 25, 2021
    Inventors: Lizhong WANG, Tianmin ZHOU, Hehe HU, Shuilang DONG, Wenhua WANG, Nianqi YAO