Abstract: A semiconductor structure includes an upper-level CMOS transistor layer having a plurality of upper-level N-type and P-type field effect transistors; and a frontside interconnect layer above, and interconnected with, the upper-level transistor layer. The frontside interconnect layer includes frontside power rails and frontside signal wiring, and at least three frontside interconnect layer metal levels. A lower-level CMOS transistor layer has a plurality of lower-level N-type and P-type field effect transistors; and a backside interconnect layer below, and interconnected with, the lower-level transistor layer. The backside interconnect layer includes backside power rails and backside signal wiring and at least three backside interconnect layer metal levels.

Abstract: A semiconductor structure includes an interconnect wiring level having metal lines. An insulating cut shape is disposed through a run length of one of the metal lines wherein the insulating cut shape divides the one of the metal lines into electrically isolated nets.

Abstract: A capacitive memory cell includes an electrode, a tunneling barrier layer in direct contact with the electrode, a charge trapping layer in direct contact with the tunneling barrier layer, a ferroelectric layer in direct contact with the charge trapping layer, and another electrode in direct contact with the ferroelectric layer.

Abstract: A semiconductor structure extends laterally with an interconnect on one side and another interconnect on an opposing side separated by a thickness of the semiconductor structure that extends longitudinally. The semiconductor structure includes an insulating member extending laterally, a source/drain (S/D) positioned in the insulating member between the interconnects, another S/D positioned in the insulating member between the first S/D and one of the interconnects, wherein the S/Ds laps each other laterally and are offset from each other longitudinally, and a via electrically connected to the first S/D and to the aforementioned one of the interconnects.

Abstract: A semiconductor structure comprising a substrate, a first metal layer on top of the substrate, a second metal layer on top of the first metal layer and a dielectric layer adjacent to the second metal layer and at least part of the first metal layer and on top of at least part of the first metal layer. The first metal layer includes a via. The width of the second metal layer is the same as the width of the via of the first metal layer.

Abstract: Embodiments are disclosed for a semiconductor structure. The semiconductor structure includes a stacked field effect transistor (FET) including a top FET and a bottom FET. Additionally, the semiconductor structure includes a bottom source/drain (S/D) contact jumper connection within a gate cut region. The gate cut includes a liner spacer and a dielectric fill within the first liner spacer. Additionally, the bottom S/D contact jumper is within the dielectric fill. The semiconductor structure further includes a top S/D contact fly-over over a bottom S/D contact in contact with the bottom S/D contact jumper. Additionally, the semiconductor structure includes a top S/D access metal track over the bottom S/D contact, through the top S/D contact. Further, the semiconductor structure includes a recessed gate cut liner facing the top S/D contact fly-over. Additionally, the semiconductor structure includes a non-recessed gate cut liner facing a non-fly-over top S/D contact.

Abstract: Embodiments provide metal tip-to-tip scaling for metal contacts. A structure includes a first metal line and a second metal line. The structure includes a spacer separating the first metal line from the second metal line, the spacer including a flat surface and curved tips, where the flat surface abuts the first metal line and the curved tips abut the second metal line.

Abstract: A semiconductor integrated circuit (IC) device includes a backside fuse structure and a backside contact. The backside fuse structure is located within the backside of the semiconductor IC device vertically between a transistor there above and a backside back end of the line (BEOL) network. The backside fuse structure includes a fuse wire and a deep via contact that is connected to both the fuse wire and to a frontside BEOL network. The backside contact is connected to the transistor, to the backside BEOL network, and to the fuse wire. The backside fuse structure may be in a non-programmed state or a programmed state. When in a non-programmed state, an open circuit exists that prevents current flow through the fuse wire or through the backside contact.

Abstract: Integrated chips include first lines, formed on an underlying substrate. Spacers are formed conformally on sidewalls of the plurality of lines. Etch stop remnants are positioned on the sidewalls of the plurality of lines, between the spacers and the underlying substrate. Second lines are formed on the underlying substrate, between respective pairs of adjacent first lines.

Abstract: A semiconductor device architecture includes a substrate and a device region including active components carried by the substrate. A plurality of tracks are on the substrate including conductive lines connecting power and signals to the active components in the device region. A first track includes a plurality of segments of a conductive line. A first segment in the first track delivers power to the device region. A second segment in the first track delivers a signal to the device region. The first segment and the second segment are arranged in the same first track.

Abstract: A semiconductor device includes a substrate and a transistor positioned on the substrate. The transistor includes transistor includes a channel region, a shared gate region, and a source and drain region. The source and drain region includes a concave outer wall includes a concave outer wall. A method of manufacturing a semiconductor device includes providing a substrate and forming a plurality of transistor gate structures on the substrate. A source and drain region are formed and positioned adjacent the plurality of transistor gate structures. A concave wall is recessed into material of the source and drain region toward a centerline of the source and drain region.

Abstract: A semiconductor device includes a substrate and a plurality of stacked transistors positioned on the substrate. The transistors include a gate region and a source and drain proximate the gate region. The source and drain includes an overall region and an active region. A thickness of the active region is less than a thickness of the overall region.

Abstract: Embodiments are disclosed for a semiconductor structure. The semiconductor structure includes a damascene-based interconnect. The damascene-based interconnect includes multiple metal layer Mx structures. Additionally, the semiconductor structure includes a subtractive metal patterned interconnect. The subtractive metal patterned interconnect includes multiple Vx-1 structures, multiple spacers in contact with the Vx-1 structures, and a dielectric liner. Further, the spacers and the dielectric liner prevent electrical contact between one of the Vx-1 structures and a neighboring Mx structure of the subtractive metal patterned layer.

Abstract: An interconnect structure includes a first via metallization layer having at least a first metal via, a second via metallization layer having at least a second metal via, and a first metallization layer disposed between the first via metallization layer and the second via metallization layer, the first metallization layer comprising a first metal line and a second metal line. The first metal via is disposed on the first metal line and the second metal via is disposed on the second metal line. The second metal via is in an overlapping configuration with the first metal via.

Abstract: A microelectronic structure includes a first row of stack nano devices that includes a plurality of a first stacked nano FET devices and a second row of stack nano devices that includes a plurality of a second stacked nano FET devices. Each of the plurality of first nano stacked FET devices and each of the plurality of second stacked FET devices includes an upper stack transistor and a lower stack transistor. A gate cut located between the first row of stacked nano devices and the second row stacked nano devices. An interconnect located within gate cut. The interconnect is connected to a source/drain of one of the lower stacked transistors and the interconnect includes a non-uniform backside surface.

Abstract: Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a device layer having a frontside and a backside and including a transistor that includes a source/drain region at the backside of the device layer; a first and a second backside metal line with the source/drain region at least partially overlapping vertically with the first backside metal line and not overlapping vertically with the second backside metal line; and a backside local interconnect that conductively connects the source/drain region of the transistor with the second backside metal line, where the backside local interconnect includes a first portion and a second portion, the first portion horizontally extending from an area underneath the source/drain region to an area outside the source/drain region of the transistor, the second portion vertically connecting the first portion to the second backside metal line. Methods for forming the same are also provided.

Abstract: A semiconductor structure including a device layer, a back end-of-line layer, and a backside power distribution layer. The backside power distribution layer includes a first line network with having a first pitch, and a second line network having a second pitch. The second pitch is greater than the first pitch. In one example, the second pitch is at least 7 times (7×) greater than the first pitch.

Abstract: A semiconductor interconnect structure and formation thereof. The semiconductor interconnect structure includes a subtractively formed via located on top of a lower level metal line. The subtractively formed via has a bottom portion and a top portion. The semiconductor interconnect structure further includes a selectively grown region formed onto the top portion of the subtractively formed via. A portion of the selectively grown region overhangs the bottom portion of the subtractively formed via in one or more directions.

Abstract: A microelectronic structure including a backside-power-distribution-network (BSDPN) connected to a backside of a device region. The BSPDN includes a plurality of first type power rails and a plurality of second type power rails located on the same level. A first power plane located on a level above the plurality of first type power rails and the plurality of second type power rails. The first power plane extends across the plurality of first type power rails and the plurality of second type power rails and the first power plane is connected to a plurality of first type power rails, but not connected to the plurality of second type power rails.

Abstract: A semiconductor structure with a first backside metal level that has a plurality of first type of lines and at least one second type line. The first type of lines have a wider top surface than the bottom surface and have a first width. The first type of lines each connect by a first via to a second backside metal level. Each of first type of lines and the second type line connect by a second via to a through-silicon via. The second type line is narrower than the first type of lines. Each of the second type line is between adjacent first type of lines. The second type line has a top surface that is in the middle of the first type of lines, below the first type of lines, above, or level with the top surface of the first type of lines.