Abstract: Interconnect structures possessing a non-porous (dense) low-k organosilicate glass (OSG) film utilizing a porous low-k OSG film as an etch stop layer or a porous low-k OSG film using a non-porous OSG film as a hardmask for use in semiconductor devices are provided herein. The novel interconnect structures are capable of delivering improved device performance, functionality and reliability owing to the reduced effective dielectric constant of the stack compared with that of those conventionally employed and also because of the relatively uniform line heights made feasible by these unique and seemingly counterintuitive features.

Abstract: Novel interconnect structures possessing an organosilicate dielectric material with unaltered physical and chemical properties post exposure to a specific resist ash chemistry for use in semiconductor devices are provided herein. The novel interconnect structure is capable of delivering improved device performance, functionality and reliability owing to the use of a chemically and physically “friendly” resist ash process. An in situ inert gas/H2 process achieves minimal chemical and physical reactivity with the organosilicate sidewalls during ashing owing to its inherent make up.