Patents by Inventor Nicholas P. T. Bateman

Nicholas P. T. Bateman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120196430
    Abstract: An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.
    Type: Application
    Filed: April 9, 2012
    Publication date: August 2, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Benjamin B. RIORDON, Nicholas P.T. BATEMAN, Charles T. CARLSON
  • Publication number: 20120181443
    Abstract: In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
    Type: Application
    Filed: March 23, 2012
    Publication date: July 19, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.,
    Inventors: Benjamin B. RIORDON, Nicholas P.T. Bateman, William T. Weaver, Russell J. Low
  • Patent number: 8173527
    Abstract: An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.
    Type: Grant
    Filed: October 18, 2010
    Date of Patent: May 8, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Benjamin B. Riordon, Nicholas P. T. Bateman, Charles T. Carlson
  • Patent number: 8164068
    Abstract: In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
    Type: Grant
    Filed: July 28, 2010
    Date of Patent: April 24, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Benjamin B. Riordon, Nicholas P. T. Bateman, William T. Weaver, Russell J. Low
  • Patent number: 8153456
    Abstract: An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.
    Type: Grant
    Filed: January 20, 2011
    Date of Patent: April 10, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Atul Gupta, Nicholas P. T. Bateman
  • Patent number: 8064071
    Abstract: A sheet measurement apparatus has a sheet disposed in a melt. The measurement system uses a beam to determine a dimension of the sheet. This dimension may be, for example, height or width. The beam may be, for example, collimated light, a laser, x-rays, or gamma rays. The production of the sheet may be altered based on the measurements.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: November 22, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Christopher A. Rowland, Peter L. Kellerman, Frank Sinclair, Julian G. Blake, Nicholas P. T. Bateman
  • Publication number: 20110272602
    Abstract: An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
    Type: Application
    Filed: July 22, 2011
    Publication date: November 10, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Nicholas P.T. Bateman, Steven M. Anella, Benjamin B. Riordon, Atul Gupta
  • Publication number: 20110256698
    Abstract: An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.
    Type: Application
    Filed: October 18, 2010
    Publication date: October 20, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Benjamin B. Riordon, Nicholas P.T. Bateman, Charles T. Carlson
  • Publication number: 20110237022
    Abstract: Methods to form complementary implant regions in a workpiece are disclosed. A mask may be aligned with respect to implanted or doped regions on the workpiece. The mask also may be aligned with respect to surface modifications on the workpiece, such as deposits or etched regions. A masking material also may be deposited on the implanted regions using the mask. The workpiece may be a solar cell.
    Type: Application
    Filed: March 23, 2011
    Publication date: September 29, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Nicholas P.T. BATEMAN, William T. WEAVER, Paul SULLIVAN, John W. GRAFF
  • Publication number: 20110217810
    Abstract: A first species selectively dopes a workpiece to form a first doped region. In one embodiment, a selective implant is performed using a mask with apertures. A soft mask is applied to the first doped region. A second species is implanted into the workpiece to form a second implanted region. The soft mask blocks a portion of the second species. Then the soft mask is removed. The first species and second species may be opposite conductivities such that one is p-type and the other is n-type.
    Type: Application
    Filed: February 24, 2011
    Publication date: September 8, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Nicholas P.T. BATEMAN, William T. WEAVER
  • Patent number: 8008176
    Abstract: An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
    Type: Grant
    Filed: August 10, 2010
    Date of Patent: August 30, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas P. T. Bateman, Steven M. Anella, Benjamin B. Riordon, Atul Gupta
  • Publication number: 20110198514
    Abstract: An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to maintain this alignment. This information can also be fed back to the ion implantation equipment to modify the implant parameters. These techniques can also be used in other ion implanter applications.
    Type: Application
    Filed: March 28, 2011
    Publication date: August 18, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Paul J. Murphy, Nicholas P.T. BATEMAN
  • Publication number: 20110177652
    Abstract: An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.
    Type: Application
    Filed: January 20, 2011
    Publication date: July 21, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Atul Gupta, Nicholas P.T. Bateman
  • Publication number: 20110104618
    Abstract: Various methods of utilizing the physical and chemical property differences between amorphized and crystalline silicon are used to create masks that can be used for subsequent implants. In some embodiments, the difference in film growth between amorphous and crystalline silicon is used to create the mask. In other embodiments, the difference in reflectivity or light absorption between amorphous and crystalline silicon is used to create the mask. In other embodiments, differences in the characteristics of doped and undoped silicon is used to create masks.
    Type: Application
    Filed: November 1, 2010
    Publication date: May 5, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Nicholas P.T. Bateman, Helen L. Maynard, Benjamin B. Riordon, Christopher R. Hatem, Deepak Ramappa
  • Publication number: 20110092059
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
    Type: Application
    Filed: April 7, 2010
    Publication date: April 21, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Kevin M. Daniels, Russell J. Low, Nicholas P.T. Bateman, Benjamin B. Riordon
  • Publication number: 20110039367
    Abstract: An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
    Type: Application
    Filed: August 10, 2010
    Publication date: February 17, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Nicholas P.T. Bateman, Steven M. Anella, Benjamin B. Riordon, Atul Gupta
  • Patent number: 7888249
    Abstract: The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: February 15, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas P. T. Bateman, Atul Gupta, Paul Sullivan, Paul J. Murphy
  • Publication number: 20110031408
    Abstract: In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
    Type: Application
    Filed: July 28, 2010
    Publication date: February 10, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Benjamin B. Riordon, Nicholas P.T. Bateman, William T. Weaver, Russell J. Low
  • Patent number: 7816153
    Abstract: A dislocation-free sheet may be formed from a melt. A sheet of material with a first width is formed on a melt of the material using a cooling plate. This sheet has dislocations. The sheet is transported with respect to the cooling plate and the dislocations migrate to an edge of the sheet. The first width of the sheet is increased to a second width by the cooling plate. The sheet does not have dislocations at the second width. The cooling plate may have a shape with two different widths in one instance. The cooling plate may have segments that operate at different temperatures to increase the width of the sheet in another instance. The sheet may be pulled or flowed with respect to the cooling plate.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: October 19, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter L. Kellerman, Frank Sinclair, Frederick Carlson, Nicholas P. T. Bateman, Robert J. Mitchell
  • Publication number: 20100197125
    Abstract: An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.
    Type: Application
    Filed: January 28, 2010
    Publication date: August 5, 2010
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOICTES, INC.
    Inventors: Russell J. Low, William Weaver, Nicholas P.T. Bateman, Atul Gupta