Abstract: Semiconductor wafers are sequentially mounted on a holder at one end of an arm which is pivoted about its other end. Each wafer is thereby passed on an arcuate path through a parallel-scanned or continuous ribbon-shaped beam for processing. The pivot axis is parallel to the centroid of the beam trajectories. By pre-orienting the wafers before loading, and by providing a second pivot between the arm and the holder, the angle between the beam and the wafer surface may be precisely adjusted to any arbitrary angle of interest. The geometry is such that this angle is constant over the processed area. Uniform processing requires a scanned ribbon beam to have a non-uniform scan velocity and a continuous ribbon beam to have a non-uniform intensity profile. The required non-uniformity is generated by a suitably shaped collimating magnet.

Abstract: An ion implanter includes an ion source for generating an ion beam, an analyzer for separating unwanted components from the ion beam, a first beam transport device for transporting the ion beam through the analyzer at a first transport energy, a first deceleration stage positioned downstream of the analyzer for decelerating the ion beam from the first transport energy to a second transport energy, a beam filter positioned downstream of the first deceleration stage for separating neutral particles from the ion beam, a second beam transport device for transporting the ion beam through the beam filter at the second transport energy, a second deceleration stage positioned downstream of the beam filter for decelerating the ion beam from the second transport energy to a final energy, and a target site for supporting a target for ion implantation. The ion beam is delivered to the target site at the final energy.

Abstract: A high-speed wafer-processing apparatus and method that employs a vacuum chamber having at least two wafer transport robots and a process station. The vacuum chamber interfaces with a number of single-wafer load locks that are loaded and unloaded one wafer at a time by a robot in atmosphere. Four load locks are sized to allow for a gentle vacuum cycling of each wafer without significant pumpdown delays. The robots in the vacuum chamber move wafers sequentially from one of the load locks to a process station for processing and then to another one of the load locks for unloading by the atmospheric robot.

Abstract: Methods and apparatus are provided for scanning a charged particle beam. The apparatus includes scan elements and a scan signal generator for generating scan signals for scanning the charged particle beam in a scan pattern having a scan origin. In one embodiment, the apparatus includes a position controller for positioning the scan elements based on a parameter of the charged particle beam, such as energy. The scan elements may be positioned to achieve a fixed position of the scan origin for different beam energies. In another embodiment, the apparatus includes first and second sets of scan elements and a scan signal controller for controlling the scan signals supplied to the sets of scan elements based on a parameter of the charged particle beam, such as energy.

Abstract: A compact high current broad beam ion implanter employs a high current density source, a bending magnet to steer the beam and straighten trajectories, and a multipole unit extending across the beam path to tailor a precise one-dimensional beam current distribution which yields a uniform implantation dose with a possibly non-uniform workpiece transport assembly. In one embodiment, the multipole unit is a separate magnet assembly positioned adjacent to a output face of the bending magnet, and includes one or more ranks of closely-spaced pole elements, controlled so the drive current or position of each pole element is varied to affect a narrow band of the beam passing over that element. In another embodiment, the bending magnet is an analyzing magnet which directs a desired species through a resolving slit, and a second magnet deflects the resultant beam while rendering it parallel and further correcting it along its width dimension.

Abstract: A flat workpiece is placed in contact with a flat platen in a vacuum chamber, and is held by a uniformly-distributed force while a small mass flow of gas is introduced along a contour to form a uniform pressure region between the flat workpiece and the platen. Separation of the two surfaces due to aplanarity or surface roughness is less than the gas mean free path, and high rates of heat transfer are obtained uniformly over the area of the workpiece. A scavenging port, located outwardly of the gas introduction contour is differentially pumped to reduce the rate of gas leakage into the chamber. Preferably, pressure is provided by an electrostatic clamp (for non-insulating substrates) or other clamping arrangement which does not occlude the front surface of the workpiece. In the electrostatic clamp, the voltage activation sequence prevents workpiece vibration, while a clamping current sensor immediately detects degree of contact, e.g., due to debris on the platen, and initiates a suitable warning or control.

Abstract: A compact high current broad beam ion implanter capable of serial processing employs a high current density source, an analyzing magnet to direct a desired species through a resolving slit, and a second magnet to deflect the resultant beam while rendering it parallel and uniform along its width dimension. Both magnets have relatively large pole gaps, wide input and output faces, and deflect through a small radius of curvature to produce a beam free of instabilities. Multipole elements incorporated within at least one magnet allow higher order aberrations to be selectively varied to locally adjust beam current density and achieve the high degree of uniformity along the beam width dimension.

Abstract: A single aperture ion source is used to produce a ribbon shaped ion beam through which a targer may be transported. At an aperture of the ion source the ion beam converges in a vertical direction and diverges in a horizontal direction. The ion beam is passed through the poles of an analyzing magnet. A waist of the ion beam in the vertical direction occurs at the analyzing magnet. The analyzing magnet causes the ion beam to converge in the horizontal direction. Immediately before the ion beam strikes the target, the ion beam is passed through a focussing magnet which renders the ion beam trajectories substantially parallel. Between the ion source and the target, the ion beam may be passed through one or more resolving slits, as necessary, to trim the ion beam and assure that a focused, uniform beam reached the target. At the target, the analyzing magnet projects an inverted image of the aperture of the ion source.

Abstract: Disclosed is an apparatus for the generation of large currents of negative ions for use in tandem accelerators, suitable for employment in ion implantation on an industrial production scale. The apparatus includes a high current positive ion source which is coupled to a charge exchange canal where a fraction of the positive ions are transformed into negative ions.