Abstract: An E-UTRAN neighbor cell list is broadcast in a GERAN network using the extended EARFCN value ranges (i.e., 18 bits). Extending the EARFCN value ranges in GERAN and signaling EARFCN values within the extended EARFCN value range to inter-RAT-capable UEs that camp in GERAN allow GERAN to support continued inter-RAT mobility between GERAN and E-UTRAN networks. E-UTRAN neighbor cell information may be communicated to UEs in the GERAN network by System Information message broadcasts using the extended EARFCN value ranges.

Abstract: A radio access network node (e.g., base station system), a mobile station, and various methods are described herein that increase the size and/or efficiency of an ack/nack bitmap in one or more control messages (e.g., Packet Downlink Ack/Nack message(s)). The mobile station when operating in a Downlink Multi Carrier mode sends the one or more control messages to the radio access network node.

Abstract: A radio network node receives a page request from a core network node. The page request indicates to page a wireless communication device. The radio network node determines a next occurrence of a monitoring window during which the wireless communication device will monitor a paging channel associated with the radio network node. If the amount of time until the next occurrence of the monitoring window exceeds an amount of time that the radio network node can store the page request, the radio network node discards the page request and sends a response to the core network node indicating that the page request was discarded; the response includes a paging timer value that indicates when the core network node should repeat the page request.

Abstract: A telecommunications node (e.g., base station subsystem) and method are described herein that broadcasts a set of system information messages (e.g., SI2quater messages or pairs of SI2ter messages and SI2quater messages) for use by a legacy mobile station which enhances the overall probability (over time) that the legacy mobile station (non-supporting mobile station) in a network sharing scenario will find frequency, cell information or a combination of both within the broadcasted system information messages to be used for the legacy mobile station's cell reselection process to provide continuity with the legacy mobile station's registered PLMN (i.e. the Common PLMN of a shared radio access network). In addition, the telecommunications node (e.g., base station subsystem) and method can also broadcast a different type of system information message for used by a supporting mobile station.

Abstract: A base station subsystem (BSS) and a method are described herein for improving an Access Grant Channel (AGCH) capacity when a downlink Temporary Block Flow (TBF) is established for at least one mobile station and used for sending the respective downlink payload. Plus, a mobile station (MS) and a method are described herein for improving the AGCH capacity when the mobile station is sent information required for establishing a downlink TBF on which it receives its respective downlink payload.

Abstract: A control apparatus for a controlled series compensator including a plurality of reactance elements each having a rapid switch for connecting and disconnecting the reactance in series with an electric power transmission line. The apparatus also includes a steady state power flow controller. A damping controller is provides on the presence of an oscillation on the transmission line a first reactance insertion on the transmission line having a first duration of time trigged by a time instant that coincides with a peak in the power oscillation.

Abstract: A control apparatus for a controlled series compensator including a plurality of reactance elements each having a rapid switch for connecting and disconnecting the reactance in series with an electric power transmission line. The apparatus also includes a steady state power flow controller. A damping controller is provides on the presence of an oscillation on the transmission line a first reactance insertion on the transmission line having a first duration of time trigged by a time instant that coincides with a peak in the power oscillation.

Abstract: In a method for forming ferroelectric thin films of vinylidene fluoride oligomer or vinylidene fluoride co-oligomer, oligomer material is evaporated in vacuum chamber and deposited as a thin film on a substrate which is cooled to a temperature in a range determined by process parameters and physical properties of the deposited VDF oligomer or co-oligomer thin film. In an application of the method of the invention for fabricating ferroelectric memory cells or ferroelectric memory devices, a ferroelectric memory material is provided in the form of a thin film of VDF oligomer or VDF co-oligomer located between electrode structures. A ferroelectric memory cell or ferroelectric memory device fabricated in this manner has the memory material in the form of a thin film of VDF oligomer or VDF co-oligomer provided on at least one of first and second electrode structures, such that the thin film is provided on at least one of the electrode structures or between first and second electrode structures.

Abstract: The invention relates to a converter provided with a resonant circuit (16), which converter comprises a device (31) for measuring the derivative (dI/dt) of the current through the current valves 82, 3) and a detection device (32) co-operating with said measuring device (31) for detecting a short-circuit in the converter, the detection device (32) being adapted to detect a short-circuit current when the current derivative (dI/dt) measured by the measuring device (31) is equal to or exceeds a stipulated current derivative limit value (dI/dtlim) during a length of time exceeding a stipulated time limit value (tlim). The invention also relates to a method for controlling such a converter.

Abstract: An electrical apparatus for limiting the peak voltage across a recttifying member (23) of a current valve arranged in a circuit having a substantial inductance (24) and having at least one controllable semiconductor device (22) and at least one said rectifying member (23) connected in anti-parallel therewith when the rectifying member is turning off, comprises means (28, 29) adapted to control the semiconductor device so as to increase the conductivity thereof during turning off of the rectifying member.

Abstract: The invention relates to a converter provided with a resonant circuit, in which converter the resonant circuit comprises means for detecting a zero current condition in the auxiliary valve. The means is adapted to send to the control device of the converter signals indicating a prevailing zero current condition in the auxiliary valve, and the control device is adapted to allow a turn-off of a semiconductor component of turn-off type of the auxiliary valve only after the receipt by the control device of a signal indicating a prevailing zero current condition in the auxiliary valve. The invention also relates to a method for controlling such a converter.

Abstract: The invention relates to a converter provided with a resonant circuit (16), which converter comprises a device (31) for measuring the derivative (dI/dt) of the current through the current valves 82, 3) and a detection device (32) co-operating with said measuring device (31) for detecting a short-circuit in the converter, the detection device (32) being adapted to detect a short-circuit current when the current derivative (dI/dt) measured by the measuring device (31) is equal to or exceeds a stipulated current derivative limit value (dI/dtlim) during a length of time exceeding a stipulated time limit value (tlim). The invention also relates to a method for controlling such a converter.

Abstract: A ferroelectric memory circuit includes a ferroelectric memory cell in the form of a ferroelectric polymer thin film and first and second electrodes respectively, contacting the ferroelectric memory cell at opposite surfaces thereof, whereby a polarization state of the cell can be set, switched or detected by applying appropriate voltages to the electrodes. At least one of the electrodes includes at least one contact layer. The at least one contact layer including a conducting polymer contacting the memory cell, and optionally a second layer of a metal film contacting the conducting polymer, whereby the at least one of the electrodes either includes a conducting polymer contact layer only, or a combination of a conducting polymer contact layer and a metal film layer.

Abstract: A ferroelectric memory circuit (C) comprises a ferroelectric memory cell in the form of a ferroelectric polymer thin film (F) and first and second electrodes (E1; E2) respectively, contacting the ferroelectric memory cell (F) at opposite surfaces thereof, whereby a polarization state of the cell can be set, switched or detected by applying appropriate voltages to the electrodes (E1; E2). At least one of the electrodes (E1; E2) comprises at least one contact layer (P1; P2), said at least one contact layer (P1; P2) comprising a conducting polymer contacting the memory cell (C), and optionally a second layer (M1; M2) of a metal film contacting the conducting polymer (P1; P2), whereby said at least one of the electrodes (E1; E2) either comprises a conducting polymer contact layer (P1; P2) only, or a combination of a conducting polymer contact layer (P1; P2) and a metal film layer (M1; M2).

Abstract: In a method for preparing ultra-thin films of carbon-containing materials, particularly thin films of polymer materials. Films with a thickness of 0.5 &mgr;m or less are formed by deposition of the materials from a liquid phase onto a solid surface. The deposition takes place in an enclosure where the materials also are subjected to a post-deposition processing. The total humidity content in the enclosure shall be maintained at a level corresponding to a relative humidity of less than 50% in a volume of air equal to the volume of enclosure by excluding and/or removing water arid water vapor from the materials and/or the atmosphere in the enclosure.