Abstract: A phase change memory device includes a phase change material portion located between a first electrode and a second electrode, and a crystallization template material portion located between the first electrode and the second electrode in contact with the phase change material portion. The crystallization template material portion and the phase change material portion belong to a same crystal system and have matching lattice spacing, or the crystallization template material portion and the phase change material portion do not belong to the same crystal system, but have a matching translational symmetry along at least one paired lattice plane with a matching lattice spacing.

Abstract: A phase change memory device includes a phase change material portion located between a first electrode and a second electrode, and a crystallization template material portion located between the first electrode and the second electrode in contact with the phase change material portion. The crystallization template material portion and the phase change material portion belong to a same crystal system and have matching lattice spacing, or the crystallization template material portion and the phase change material portion do not belong to the same crystal system, but have a matching translational symmetry along at least one paired lattice plane with a matching lattice spacing.

Abstract: Systems and methods for improving the crystallization of a phase change material of a phase change memory cell are described. A two-step SET pulse may be applied to the phase change material in which a first lower SET pulse is applied to make the phase change material dwell at 600K to incubate nuclei near the maximum nucleation rate and then a second higher SET pulse is immediately applied to make the phase change material dwell at 720K to maximize crystal growth. Moreover, the slope of the falling edge of a RESET pulse applied prior to the two-step SET pulse may be adjusted to increase the number of nuclei (e.g., formed with a steeper falling edge) to increase SET efficiency at the expense of a more stable amorphous phase (e.g., formed with a less steep falling edge) that improves data retention.

Abstract: Systems and methods for improving the crystallization of a phase change material of a phase change memory cell are described. A two-step SET pulse may be applied to the phase change material in which a first lower SET pulse is applied to make the phase change material dwell at 600K to incubate nuclei near the maximum nucleation rate and then a second higher SET pulse is immediately applied to make the phase change material dwell at 720K to maximize crystal growth. Moreover, the slope of the falling edge of a RESET pulse applied prior to the two-step SET pulse may be adjusted to increase the number of nuclei (e.g., formed with a steeper falling edge) to increase SET efficiency at the expense of a more stable amorphous phase (e.g., formed with a less steep falling edge) that improves data retention.

Abstract: Systems and methods for improving the crystallization of a phase change material of a phase change memory cell are described. A two-step SET pulse may be applied to the phase change material in which a first lower SET pulse is applied to make the phase change material dwell at 600K to incubate nuclei near the maximum nucleation rate and then a second higher SET pulse is immediately applied to make the phase change material dwell at 720K to maximize crystal growth. Moreover, the slope of the falling edge of a RESET pulse applied prior to the two-step SET pulse may be adjusted to increase the number of nuclei (e.g., formed with a steeper falling edge) to increase SET efficiency at the expense of a more stable amorphous phase (e.g., formed with a less steep falling edge) that improves data retention.

Abstract: Magnetic field assisted magnetoresistive random access memory (MRAM) structures, integrated circuits including MRAM structures, and methods for fabricating integrated circuits including MRAM structures are provided. An exemplary integrated circuit includes a magnetoresistive random access memory (MRAM) structure and a magnetic field assist structure to generate a selected net magnetic field on the MRAM structure.

Abstract: Integrated circuits and methods for fabricating integrated circuits with magnetic tunnel junction (MTJ) structures are provided. An exemplary method for fabricating an integrated circuit includes forming a magnetic tunnel junction (MTJ) structure and conformally forming a metal oxide encapsulation layer over and around the MTJ structure. The method further includes removing a portion of the metal oxide encapsulation layer over MTJ structure. Also, the method includes forming a conductive via over and in electrical communication with the top surface of the MTJ structure.

Abstract: Magnetic field assisted magnetoresistive random access memory (MRAM) structures, integrated circuits including MRAM structures, and methods for fabricating integrated circuits including MRAM structures are provided. An exemplary integrated circuit includes a magnetoresistive random access memory (MRAM) structure and a magnetic field assist structure to generate a selected net magnetic field on the MRAM structure.

Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The base layer includes a seed layer and a roughness suppression layer. The spin transfer torque magnetic random access memory structure further includes a hard layer over the base layer. Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the hard layer and a top electrode over the MTJ element.

Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a seed layer, first and second pinned layers, and a coupling layer. The seed layer includes holmium. The first pinned layer overlies the seed layer, where the first pinned layer is magnetic, and the non-magnetic coupling layer overlies the first pinned layer. The second pinned layer overlies the coupling layer, where the second pinned layer is also magnetic.

Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode, a seed layer over the bottom electrode, a hard layer over the seed layer, a magnetically continuous transition layer over the hard layer, a reference layer over the magnetically continuous transition layer, a tunnel barrier layer over the reference layer, a storage layer formed over the tunnel barrier layer, and a top electrode. The reference layer, the tunnel barrier layer, and the storage layer form a magnetic tunnel junction (MTJ) element with a perpendicular orientation.

Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode, a seed layer over the bottom electrode, a hard layer over the seed layer, a magnetically continuous transition layer over the hard layer, a reference layer over the magnetically continuous transition layer, a tunnel barrier layer over the reference layer, a storage layer formed over the tunnel barrier layer, and a top electrode. The reference layer, the tunnel barrier layer, and the storage layer form a magnetic tunnel junction (MTJ) element with a perpendicular orientation.

Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The base layer includes a seed layer and a roughness suppression layer. The spin transfer torque magnetic random access memory structure further includes a hard layer over the base layer. Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the hard layer and a top electrode over the MTJ element.

Abstract: A display method comprises a step during which an aircraft flight management computer sends display instructions to a display management system, to control the display of an aircraft flight plan window. The display method also comprises steps comprising acquiring a reference point and a vertical flight profile of the aircraft comprising the reference point, and computing, using the vertical flight profile, an altitude of the reference point. It also comprises steps comprising acquiring an information item relating to a flight phase associated with the reference point, acquiring an information item relating to a selected display range, determining a vertical centering coefficient of a display window relating to the vertical flight profile, as a function of the flight phase and transmitting, to the display management system, instructions for displaying the display window as a function of the altitude of the reference point and of the centering coefficient of the display window.

Abstract: A method and device for automatically comparing two flight trajectories for an aircraft includes a central processing unit having a first comparison element for automatically comparing lateral trajectories of the two flight trajectories, and a second comparison element for automatically comparing vertical trajectories of these two flight trajectories, these comparisons being carried out successively leg by leg of the flights, these comparisons being carried out as long as the respective successive legs are identical and at least for a predefined distance in the horizontal plane.

Abstract: A method and assembly for guidance of an aircraft during a low-altitude flight. The guidance assembly comprises a memory forming part of a flight management system, which is configured to store an active flight trajectory and any new flight trajectory, generated by the flight management system, and a memory forming part of a guidance system, which is configured to also store the flight trajectory and any new flight trajectory, which are received from the flight management system, the guidance assembly being configured to periodically transmit from the guidance system to the flight management system identification codes for the flight trajectories recorded in the memory of the guidance system.

Abstract: A display method comprises a step during which an aircraft flight management computer sends display instructions to a display management system, to control the display of an aircraft flight plan window. The display method also comprises steps comprising acquiring a reference point and a vertical flight profile of the aircraft comprising the reference point, and computing, using the vertical flight profile, an altitude of the reference point. It also comprises steps comprising acquiring an information item relating to a flight phase associated with the reference point, acquiring an information item relating to a selected display range, determining a vertical centering coefficient of a display window relating to the vertical flight profile, as a function of the flight phase and transmitting, to the display management system, instructions for displaying the display window as a function of the altitude of the reference point and of the centering coefficient of the display window.

Abstract: A device for revising a low-altitude flight phase of a flight path of an aircraft includes an input unit configured to allow an operator to input parameters to define an intermediate flight section (Si) which has to be inserted into a low-altitude flight phase, and a processing unit configured to calculate a profile relating to the intermediate flight section (Si) using input parameters, and to automatically insert this profile into the flight phase between a first upstream part (P1) and a second downstream part (P2) so as to establish a revised flight phase (PR).

Abstract: A system for automatically modifying a lateral flight plan of an aircraft includes modifying means adapted to modify the flight plan by an action to chosen among the following actions: deleting, adding and moving at least one waypoint of an initial flight plan (T1). The modified flight plan (T3) includes one downstream waypoint (P6) defined as the waypoint on which the aircraft gets back to the initial flight plan (T1), and one upstream waypoint (P4) preceding the downstream waypoint (P6). By defining an intermediate point (P5?) between the upstream (P4) and downstream (P6) waypoints, the coordinates are calculated in order to allow the aircraft to reach the downstream waypoint (P6) with the same course as the initial flight plan (T1).

Abstract: A method and device for automatically comparing two flight trajectories for an aircraft includes a central processing unit having a first comparison element for automatically comparing lateral trajectories of the two flight trajectories, and a second comparison element for automatically comparing vertical trajectories of these two flight trajectories, these comparisons being carried out successively leg by leg of the flights, these comparisons being carried out as long as the respective successive legs are identical and at least for a predefined distance in the horizontal plane.