Abstract: The present invention concerns a system for determining if a deterioration occurs in an interface of a semiconductor die of an electric power module, the electric power module further comprising a substrate and at least one electromechanical transductor, the semiconductor die and the at least one electromechanical transductor being placed on or embedded within the substrate, wherein the system comprises: —means for transferring at least one electric signal to the at least one electromechanical transductor, —means for measuring the impedance of the at least one electromechanical transductor, —means for comparing the impedance of the at least one electromechanical transductor to a predetermined value, —means for deciding that the deterioration occurs in the interface of the semiconductor die according to the comparison result.

Abstract: The present invention concerns a method for estimating a level of damage or a lifetime expectation of a power semiconductor module comprising at least one die that is mechanically and electrically attached to a ceramic substrate. The ceramic substrate has piezoelectric properties and the method comprises the steps of: controlling the at least one power die, the control of the at least one power die generating changes in the electrical potential across the ceramic substrate, obtaining information representative of a mechanical deformation of the ceramic substrate, determining if a notification indicating the level of damage or the lifetime expectation has to be performed according to the obtained information and reference information, notifying the level of damage or the lifetime expectation if the determining step determines that the notification has to be performed.

Abstract: The present invention relates to a printed circuit board embedding a power die wherein interconnections between the power die and the printed circuit board are composed of micro/nano wires, the printed circuit board comprising a cavity wherein the power die is placed, and wherein the cavity is further filled with a dielectric fluid.

Abstract: The present invention concerns a method and a device for estimating a level of damage or a lifetime expectation of a power semiconductor module comprising at least one die that is mechanically, thermally, and electrically attached to a substrate, composed of plural layers of different materials. The invention: obtains power losses of the power semiconductor module, obtains the temperature in at least two different locations of the power semiconductor module, estimates a thermal model between the at least two different locations of the power semiconductor module using the determined power losses and the obtained temperatures, determines if a notification indicating the level of damage or the lifetime expectation has to be performed according to the estimated thermal model and a reference thermal model. notifies the level and location of damage or the lifetime expectation if the determining step determines that the notification has to be performed.

Abstract: The present invention concerns a power module comprising a heat sink, a substrate on which a power die is attached, the power module further comprises between the substrate and the heat sink, a first and a second materials, the first material having a thermal conductivity that is higher than the thermal conductivity of the second material, the second material having a first cavity below the power die and the first material is in the first cavity of the second material.

Abstract: The present invention concerns a method for estimating a level of damage of an electric device. The method comprises the steps of: —forming a histogram of operating cycles related to the electric device for which the level of damage estimation is performed, —comparing the formed histogram to histograms of a collection of histograms or to combinations of histograms of the collection of histograms, each histogram of the collection of histogram being associated to a level of damage, in order to determine the histogram of the collection of histograms or the combination of histograms which is the closest from the formed histogram, —determining an estimate of the level of damage of the electric device from the level of damage of the closest histogram or from the levels of damages of the histograms of the closest combination of histograms.

Abstract: The present invention concerns a system for determining if a deterioration occurs in an interface of a semiconductor die of an electric power module, the electric power module further comprising a substrate and at least one electromechanical transductor, the semiconductor die and the at least one electromechanical transductor being placed on or embedded within the substrate, wherein the system comprises: —means for transferring at least one electric signal to the at least one electromechanical transductor, —means for measuring the impedance of the at least one electromechanical transductor, —means for comparing the impedance of the at least one electromechanical transductor to a predetermined value, —means for deciding that the deterioration occurs in the interface of the semi-conductor die according to the comparison result.