Abstract: A semiconductor device includes a row of source/drain regions delineating a frontside and a backside opposite the frontside of the semiconductor device. A front gate cut from the frontside of the device has a depth that is less than a height of a gate structure for the semiconductor device. A back gate cut from the backside of the semiconductor device contacts the front gate cut.

Abstract: A semiconductor structure including a first transistor having a first gate-to-gate space and a first source drain region, a second transistor having a second gate-to-gate space and a second source drain region, where the first gate-to-gate space is less than the second gate-to-gate space, and where a bottommost surface of the first source drain region is above a bottommost surface of the second source drain region.

Abstract: Semiconductor devices include an active part that includes a semiconductor channel and a gate stack. A frontside part includes a frontside electrical contact to the active part. A backside part includes a backside electrical contact to the active part. A lower gate cap electrically insulates the gate from the backside electrical contact and includes a first region of the lower gate cap that is in contact with a shallow trench isolation (STI) structure of the backside part and a second region of the lower gate cap that is in contact with a surface of the backside electrical contact.

Abstract: A semiconductor structure includes a transistor at a first side of the semiconductor structure, a contact to the transistor at a second side of the semiconductor structure, and sidewall spacers surrounding a portion of sidewalls of the contact. The contact has a first width above the sidewall spacers and a second width below the sidewall spacers, the second width being different than the first width. The second width may be greater than the first width.

Abstract: A semiconductor device including a source drain region adjacent to a nanosheet stack, a wrap around source drain contact, the wrap around source drain contact includes an upper region, a middle region and a lower region, where the upper region is above the source drain region, the middle region covers an upper horizontal surface of the source drain region and surrounds an upper portion of an angled vertical side surface of the source drain region, and the lower region surrounds a remaining portion of the angled vertical side surface of the source drain region, where a thickness of the wrap around source drain contact in the middle region is greater than a thickness of the wrap around source drain contact in the lower region.

Abstract: A semiconductor structure is provided that has a lowered gate aspect ratio on the shallow trench isolation area to prevent gate structure flop over. The structure includes a shallow trench isolation region including a first trench dielectric material having a first height. The structure further includes an active device region located adjacent to the shallow trench isolation region. The active device region includes a second trench dielectric material having a second height which is less than the first height.

Abstract: A microelectronic structure including a first nanosheet transistor that includes a first source/drain. A second nanosheet transistor that is adjacent to the first nanosheet transistor and the second nanosheet transistor includes a second source/drain. A first backside contact connected to a backside surface of the first source/drain. A second backside contact connected to a backside surface of the second source/drain. A first shallow trench fill layer located between the first backside contact and the second backside contact. A second shallow trench fill layer located adjacent to the first backside contact. The second shallow trench fill layer is located on the opposite side of the first backside contact than the first shallow trench isolation layer. A backside isolation pillar located on top of the first shallow trench isolation fill layer. A top surface of the backside isolation pillar is coplanar with a top surface of the first and second backside contact.

Abstract: A semiconductor structure containing optimized frontside interlayer dielectrics (ILDs) for a direct backside contact based backside power distribution network is provided. Notably, the frontside ILD materials that are present in the semiconductor structure are optimized such that a frontside ILD layer that is present on a critical circuit path has a thermal conductivity that is less than a thermal conductivity of a frontside ILD layer that is present on a non-circuit path.

Abstract: A semiconductor structure including a first nanosheet transistor device, a second nanosheet transistor device, a dielectric gate cut structure between and electrically isolating the first nanosheet transistor device from the second nanosheet transistor device, where a first portion of the dielectric gate cut structure has a positive tapered profile, and a second portion of the dielectric gate cut structure has a negative tapered profile.

Abstract: A measurement bar includes a sheath, a leading edge having a plurality of cavities, a steady pressure sensor generating first data and an unsteady pressure sensor generating second data in each of the cavities, an electronic circuit including the steady pressure sensor and the unsteady pressure sensor of each of the cavities, a processing unit configured to merge the first data and the second data, and a second communication module configured to transmit the first data, the second data and the merged first data and second data to a user device. Thus, it is possible to monitor unsteady aerodynamic phenomena.

Abstract: A semiconductor structure including a nanosheet transistor device including a backside source drain contact, where the backside source drain contact including a top portion, a middle portion, and a bottom portion, and a dielectric liner disposed along sidewalls of the top portion of the backside source drain contact.

Abstract: An electronic device interfaced with a multiple digital signatures security engine, internally or externally, which enable the device to obtain PUF-based security credentials with the option to generate multiple unique digital signatures from the same source of PUF entropy. The multiple digital signatures security zone includes a source of PUF entropy dynamically measurable, a non-volatile memory storage media and a digital circuitry performing all the functions requested by the electronic device interfaced. The electronic device is able to select and switch between which unique digital signature to be involved for its related cybersecurity applications without depending on power-up sequences or single time operations after power-up sequence.

Abstract: A microelectronic structure a first nanosheet transistor that includes a first source/drain, and a second nanosheet transistor that is adjacent to the first nanosheet transistor. The second nanosheet transistor includes a second source/drain. A shared gate that extends between the first nanosheet transistor and the second nanosheet transistor. A gate protrusion that extends towards a backside region of the first nanosheet transistor and the backside region of the second nanosheet transistor. A first backside contact connected to first source/drain and a second backside contact connected to the second source/drain. A signal contact connected to the gate protrusion. An isolation layer located between the signal contact and first backside contact and the isolation layer is located between the signal contact and the second backside contact.

Abstract: A semiconductor structure including first shallow trench isolation regions and second shallow trench isolation regions, where the second shallow trench isolation regions are deeper than the first shallow trench isolation regions, and backside contact structures in direct contact with and physically separated by at least one of the second shallow trench isolation regions.

Abstract: A semiconductor structure includes a transistor device at a first side of the semiconductor structure, a control circuit at the first side of the semiconductor structure, and a resistor-capacitor circuit including a resistor and a capacitor. The resistor is in a power delivery network at a second side of the semiconductor structure and the capacitor is at the first side of the semiconductor structure. A first electrode of the capacitor is coupled to a first power rail in the power delivery network at the second side of the semiconductor structure. A second electrode of the capacitor is coupled to a second power rail in the power delivery network at the second side of the semiconductor structure. An input of the control circuit is coupled to the resistor. A gate of the transistor device is coupled to an output of the control circuit.

Abstract: A measuring rake, configured to be arranged on a link rod, includes a sheath including a front face and two side walls delimiting between them a recess configured to receive the link rod, an electronic circuit arranged on the front face of the sheath and including at least one sensor, a patched leading edge fixed removably to the sheath, and a seal arranged between the patched leading edge and the electronic circuit, the patched leading edge including a plurality of air intakes, each forming a fluidic passage between an outer face and an inner face of the patched leading edge opening out facing at least one sensor of the electronic circuit, the measuring rake making it possible to obtain a measuring tool which can be assembled simply and quickly, with easy access to the electronic circuit, and making it possible to avoid problems of orifice blockages or air leaks.

Abstract: The invention proposes an aeronautical turbine engine assembly comprising an upstream casing (55) to which guide blading (48a) is fastened, and a downstream casing (58) to which a sealing element (62) provided with an abradable material for rotor blading is fastened. This assembly further comprises a shroud ring (66) placed between the upstream casing and the downstream casing and fastening means (68) for detachably fastening the shroud ring. In order to be fastened to the upstream casing, the guide blading (48a) of the turbine engine is mounted on a downstream hook (480b) of the upstream casing, without being hooked onto the shroud ring (66), and the downstream casing (58) has an upstream hook with which the sealing element (62) is engaged in order to be fastened to the downstream casing, or the shroud ring has an upstream hook on which the sealing element (62) is mounted so as to be fastened to the downstream casing.

Abstract: A semiconductor structure includes an electronic fuse via having a positive tapered shape extending from a back-end-of-the-line interconnect to a backside power delivery network. The electronic fuse via comprises a conductive material.

Abstract: A microelectronic structure includes a first nanosheet transistor column. The first nanosheet transistor column includes a plurality of first channel layers and a first gate located around each of the plurality of first channel layers. A second nanosheet transistor column that includes a plurality of second channel layers and a second gate located around each of the plurality of second channel layers. The first nanosheet transistor column is adjacent to the second nanosheet column. A source/drain located between the first nanosheet transistor column and the second nanosheet transistor column. A dielectric cap located on top of and in direct contact with a frontside surface of the source/drain. The dielectric cap is in contact with a sidewall of the first gate and the dielectric cap is in contact with a sidewall of the second gate.

Abstract: A semiconductor structure is provided that includes stacked field effect transistors (FETs) that have different shaped inner spacers. Notably, the stacked FETs include a first FET having a horizontal inner spacer and a second FET stacked over the first FET and having a fork shaped inner spacer. The present application also provides a method of forming such as a semiconductor structure. The method avoids gate dielectric spacer fang formation in the source/drain regions and thus avoids problems with forming the stacked nanosheet structure of the first FET.