Abstract: A semiconductor structure includes a transistor device at a first side of the semiconductor structure, a control circuit at the first side of the semiconductor structure, and a resistor-capacitor circuit including a resistor and a capacitor. The resistor is in a power delivery network at a second side of the semiconductor structure and the capacitor is at the first side of the semiconductor structure. A first electrode of the capacitor is coupled to a first power rail in the power delivery network at the second side of the semiconductor structure. A second electrode of the capacitor is coupled to a second power rail in the power delivery network at the second side of the semiconductor structure. An input of the control circuit is coupled to the resistor. A gate of the transistor device is coupled to an output of the control circuit.

Abstract: A measuring rake, configured to be arranged on a link rod, includes a sheath including a front face and two side walls delimiting between them a recess configured to receive the link rod, an electronic circuit arranged on the front face of the sheath and including at least one sensor, a patched leading edge fixed removably to the sheath, and a seal arranged between the patched leading edge and the electronic circuit, the patched leading edge including a plurality of air intakes, each forming a fluidic passage between an outer face and an inner face of the patched leading edge opening out facing at least one sensor of the electronic circuit, the measuring rake making it possible to obtain a measuring tool which can be assembled simply and quickly, with easy access to the electronic circuit, and making it possible to avoid problems of orifice blockages or air leaks.

Abstract: The invention proposes an aeronautical turbine engine assembly comprising an upstream casing (55) to which guide blading (48a) is fastened, and a downstream casing (58) to which a sealing element (62) provided with an abradable material for rotor blading is fastened. This assembly further comprises a shroud ring (66) placed between the upstream casing and the downstream casing and fastening means (68) for detachably fastening the shroud ring. In order to be fastened to the upstream casing, the guide blading (48a) of the turbine engine is mounted on a downstream hook (480b) of the upstream casing, without being hooked onto the shroud ring (66), and the downstream casing (58) has an upstream hook with which the sealing element (62) is engaged in order to be fastened to the downstream casing, or the shroud ring has an upstream hook on which the sealing element (62) is mounted so as to be fastened to the downstream casing.

Abstract: A semiconductor structure includes an electronic fuse via having a positive tapered shape extending from a back-end-of-the-line interconnect to a backside power delivery network. The electronic fuse via comprises a conductive material.

Abstract: A microelectronic structure includes a first nanosheet transistor column. The first nanosheet transistor column includes a plurality of first channel layers and a first gate located around each of the plurality of first channel layers. A second nanosheet transistor column that includes a plurality of second channel layers and a second gate located around each of the plurality of second channel layers. The first nanosheet transistor column is adjacent to the second nanosheet column. A source/drain located between the first nanosheet transistor column and the second nanosheet transistor column. A dielectric cap located on top of and in direct contact with a frontside surface of the source/drain. The dielectric cap is in contact with a sidewall of the first gate and the dielectric cap is in contact with a sidewall of the second gate.

Abstract: A semiconductor structure is provided that includes stacked field effect transistors (FETs) that have different shaped inner spacers. Notably, the stacked FETs include a first FET having a horizontal inner spacer and a second FET stacked over the first FET and having a fork shaped inner spacer. The present application also provides a method of forming such as a semiconductor structure. The method avoids gate dielectric spacer fang formation in the source/drain regions and thus avoids problems with forming the stacked nanosheet structure of the first FET.

Abstract: A microelectronic structure includes a first nanosheet transistor that includes a first source/drain and a second source/drain. The first source/drain and the second source/drain are doped with a first material. A second nanosheet transistor that includes a third source/drain and fourth source/drain. The third source/drain and the fourth source/drain are doped with a second material. The first material and the second material are different. A placeholder is located on a backside surface of the second source/drain and the placeholder is doped with a third material. The third material is the same as the first material.

Abstract: A semiconductor device is provided. The semiconductor device includes an active region, a first gate electrode, a second gate electrode having a height that is less than a height of the first gate electrode, and a gate contact formed on the first gate electrode and overlapping with the active region.

Abstract: A semiconductor device comprises a stacked structure comprising a plurality of gate structures alternately stacked with a plurality of dielectric layers. Respective ones of the plurality of gate structures comprise a gate region and a gate dielectric layer disposed around the gate region. Respective ones of the plurality of dielectric layers are disposed between a first two-dimensional semiconductor material layer of a plurality of two-dimensional semiconductor material layers and a second two-dimensional semiconductor material layer of the plurality of two-dimensional semiconductor material layers. The gate dielectric layer of the respective ones of the plurality of gate structures contacts at least one of the plurality of two-dimensional semiconductor material layers.

Abstract: A microelectronic structure that includes a nanosheet transistor that includes a first source/drain and a second source/drain. A trench epi extending from a backside surface of the first source/drain. A backside contact that wraps around the trench epi and is in contact with a backside surface of the first source/drain.

Abstract: Methods, systems, and devices for leveraging automotive and wearable-based data are described. For example, a system may include a wearable device, a user device associated with the wearable device, and a vehicle. The system may determine when a user is within a proximity of the vehicle based on communications between the vehicle and the wearable device, between the vehicle and the user device, or both. The system may retrieve physiological data measurement from the user via the wearable device based on determining the user is positioned in a proximity of the vehicle, such that one or more operational parameters of the vehicle may be adjusted based on the physiological data. Additionally, or alternatively, the system may receive telemetry data from one more sensors of the vehicle and may provide feedback to the user based on the telemetry data satisfying one or more trigger conditions.

Abstract: Methods, systems, and devices for leveraging automotive and wearable-based data are described. For example, a system may include a wearable device, a user device associated with the wearable device, and a vehicle. The system may determine when a user is within a proximity of the vehicle based on communications between the vehicle and the wearable device, between the vehicle and the user device, or both. The system may retrieve physiological data measurement from the user via the wearable device based on determining the user is positioned in a proximity of the vehicle, such that one or more operational parameters of the vehicle may be adjusted based on the physiological data. Additionally, or alternatively, the system may receive telemetry data from one more sensors of the vehicle and may provide feedback to the user based on the telemetry data satisfying one or more trigger conditions.

Abstract: A microelectronic structure that includes a stacked nanosheet FET transistor that includes an upper nanosheet transistor and a lower nanosheet transistor. The upper nanosheet transistor includes an upper source/drain and the upper source/drain includes an upper tip that is pointed in a first direction. The lower nanosheet transistor includes a lower source/drain and the lower source/drain includes a lower tip pointed in a second direction. The first direction is different than the second direction.

Abstract: Methods, systems, and devices for leveraging automotive and wearable-based data are described. For example, a system may include a wearable device, a user device associated with the wearable device, and a vehicle. The system may determine when a user is within a proximity of the vehicle based on communications between the vehicle and the wearable device, between the vehicle and the user device, or both. The system may retrieve physiological data measurement from the user via the wearable device based on determining the user is positioned in a proximity of the vehicle, such that one or more operational parameters of the vehicle may be adjusted based on the physiological data. Additionally, or alternatively, the system may receive telemetry data from one more sensors of the vehicle and may provide feedback to the user based on the telemetry data satisfying one or more trigger conditions.

Abstract: An IC for adaptive PUF stabilization process includes a PUF stabilizer and a non-volatile memory. The PUF stabilizer has PUF units, a statistic processor, a majority voting generator, and a dark-bit masker. The statistic processor is connected to the PUF units, and performs measurements on the PUF units to output results. The majority voting generator is connected to the statistic processor to accumulate the results into a statistic result, which is output as a PUF bit. The dark-bit masker is connected to the PUF units, and marks unstable PUF units bit as dark-bit and create dark-bit masks. The non-volatile memory is connected to the PUF stabilizer to store the dark-bit masks, and the dark-bits are replaced by specific bit sequences provided by the PUF stabilizer. This decreases bit error rates of the PUF measurement results, and allows customization of the quantity of dark bits per dark-bit mask used.

Abstract: The method for calibrating a micromachined inertial angle sensor (2) comprising a support, at least one vibrating mass movable relative to the support, at least one transducer for exciting vibrating movement of the vibrating mass, at least one transducer for detecting a vibration of the vibrating mass, and at least one electrostatic transducer being capable of applying an adjustable electrostatic stiffness to the vibrating mass, the calibration method comprising the steps of the angle sensor receiving a predetermined vibrational excitation emitted by an excitation device (18) separate from the excitation transducer; the detection transducer measuring the vibration of the vibrating mass to obtain a measurement signal (Sm) from said measurement by the detection transducer; and transforming; determining, adjusting, and applying the electrostatic stiffness.

Abstract: This disclosure relates to a man-made ski resort transportation system, including: the ski slope control center(s), being used to receive ski slope environmental data, judge if the environmental data of each ski slope in the man-made ski resort map is within the preset critical value, to define the zones of ski slope in which the ski slope environmental data are not within the preset critical value, and sending the defined ski slopes network digital map to vehicle dispatch control center(s); vehicle dispatch control center, is used to receive the man-made ski resort digital maps, transportation zones environmental parameters and transportation needs, according to the man-made ski resort digital map and the transportation zone's environmental data calculate transportation zone digital map and according to the transportation zone digital map, transportation zone environmental data and transportation needs from users' terminals, work out routes and send them to each vehicle and users.

Abstract: There is provided a computer implemented method for adding a new gaming engine to a gaming services platform, comprising: identifying the new gaming engine to add to the gaming services platform, wherein the gaming services platform includes a plurality of other gaming engines operating thereon, initiating an integration process between the gaming services platform and the new gaming engine, the integration process including modifying at least one aspect of the new gaming engine to conform to a gaming services interface (GSI) of the gaming services platform for facilitating the integration, analyzing at least one metric associated with the new gaming engine using the GSI, and based on the analyzing, modifying at least one aspect of playing a game with the new gaming engine via the GSI, for improving the analyzed at least one metric.

Abstract: A semiconductor device includes a plurality of first nanosheet fin structures located in a dense array region of a substrate. The semiconductor device further includes a plurality of first isolation trenches between adjacent first nanosheet fin structures of the plurality of first nanosheet fin structures. The plurality of first isolation trenches include: a first trench isolation layer, a protective liner formed on top of the first trench isolation layer, and a second trench isolation layer located above the protective liner. The protective liner separates the first trench isolation layer from the second trench isolation layer and the first trench isolation layer is more dense than the second trench isolation layer.

Abstract: Disclosed herein is a method of improving user experience in conjunction with a computer game long-term factors by controlling rewards to players, comprising communicating with a game engine of a computer game to receive a plurality of behavior parameters relating to in-game actions of a plurality of players engaged in the computer game using a plurality of client devices, balancing between a user experience of one or more of the players and one or more long-term factors of the computer game by generating, based on the plurality of behavior parameters, one or more reward recommendations for allocating one or more rewards to one or more players for in-game actions made by the players, and causing the game engine to adjust a Graphic User Interface (GUI) of the client device of one or more of the players to reflect the one or more allocated rewards.