Patents by Inventor Nicole Saulnier
Nicole Saulnier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11456415Abstract: A semiconductor structure may include a heater surrounded by a dielectric layer, a projection liner on top of the heater, a phase change material layer above the projection liner, and a top electrode contact surrounding a top portion of the phase change material layer, The projection liner may cover a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer and the heater. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The top electrode contact may be separated from the phase change material layer by a metal liner. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.Type: GrantFiled: December 8, 2020Date of Patent: September 27, 2022Assignee: International Business Machines CorporationInventors: Injo Ok, Ruqiang Bao, Andrew Herbert Simon, Kevin W. Brew, Nicole Saulnier, Iqbal Rashid Saraf, Muthumanickam Sankarapandian, Sanjay C. Mehta
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Publication number: 20220209105Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.Type: ApplicationFiled: December 29, 2020Publication date: June 30, 2022Inventors: Kevin W. Brew, Injo Ok, Jin Ping Han, Timothy Mathew Philip, Matthew Joseph BrightSky, Nicole Saulnier
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Publication number: 20220181546Abstract: A semiconductor structure may include a heater surrounded by a dielectric layer, a projection liner on top of the heater, a phase change material layer above the projection liner, and a top electrode contact surrounding a top portion of the phase change material layer, The projection liner may cover a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer and the heater. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The top electrode contact may be separated from the phase change material layer by a metal liner. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.Type: ApplicationFiled: December 8, 2020Publication date: June 9, 2022Inventors: Injo Ok, RUQIANG BAO, Andrew Herbert Simon, Kevin W. Brew, Nicole Saulnier, Iqbal Rashid Saraf, Muthumanickam Sankarapandian, Sanjay C. Mehta
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Publication number: 20220181547Abstract: A semiconductor structure may include a heater surrounded by a second dielectric layer. a projection liner on top of the second dielectric layer, and a phase change material layer above the projection liner. A top surface of the projection liner may be substantially flush with a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.Type: ApplicationFiled: December 8, 2020Publication date: June 9, 2022Inventors: Injo OK, RUQIANG BAO, Andrew Herbert SIMON, Kevin W. BREW, Nicole SAULNIER, Iqbal Rashid SARAF, Prasad BHOSALE
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Publication number: 20220165949Abstract: A mushroom type phase change memory (PCM) cell includes a projection liner located between a PCM volume and a bottom electrode. The projection liner has been retained from a layer previously utilized as an etch stop layer during the fabrication of PCM cell and/or the fabrication of the higher level IC device. The projection liner may extend beyond the PCM sidewall(s) or side boundary. This section of the projection liner may be located or buried under a dielectric or an encapsulation spacer and may increase thickness uniformity of the projection liner below the PCM volume.Type: ApplicationFiled: November 25, 2020Publication date: May 26, 2022Inventors: Kevin W. Brew, Injo Ok, Iqbal Rashid Saraf, Nicole Saulnier, Matthew Joseph BrightSky, ROBERT L. BRUCE
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Patent number: 11283015Abstract: A method of forming a phase change memory device is provided. The method includes forming a spacer layer on a substrate, and forming a heater terminal contact in the spacer layer. The method further includes forming a liner layer on the heater terminal contact and the spacer layer, and forming a heater terminal in electrical contact with the heater terminal contact in the liner layer. The method further includes forming a conductive projection segment on the heater terminal. The method further includes forming a phase change material layer on the conductive projection segment, and forming a phase change material terminal on the phase change material layer, wherein an electrical current can pass between the heater terminal and the phase change material terminal through the phase change material layer.Type: GrantFiled: March 24, 2020Date of Patent: March 22, 2022Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Timothy Mathew Philip, Nicole Saulnier, Lawrence A. Clevenger
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Patent number: 11264569Abstract: A phase change material memory device is provided. The phase change material memory device includes one or more electrical contacts in a substrate, and a dielectric cover layer on the electrical contacts and substrate. The phase change material memory device further includes a lower conductive shell in a trench above one of the one or more electrical contacts, and an upper conductive shell on the lower conductive shell in the trench. The phase change material memory device further includes a conductive plug filling the upper conductive shell. The phase change material memory device further includes a liner layer on the dielectric cover layer and conductive plug, and a phase change material block on the liner layer on the dielectric cover layer and in the trench.Type: GrantFiled: November 1, 2019Date of Patent: March 1, 2022Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Injo Ok, Kevin W. Brew, Timothy M. Philip, Muthumanickam Sankarapandian, Sanjay C. Mehta, Nicole Saulnier, Steven M. Mcdermott
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Patent number: 11227793Abstract: A method of forming a self-aligned pattern of vias in a semiconductor device comprises forming a first layer of mandrels, then forming a second layer of mandrels orthogonal to the first layer of mandrels. The layout of the first and second layers of mandrels defines a pattern that can be used to create vias in a semiconductor material. Other embodiments are also described.Type: GrantFiled: May 1, 2018Date of Patent: January 18, 2022Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Lawrence A. Clevenger, Nelson M. Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny, Nicole Saulnier
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Patent number: 11158788Abstract: A method for manufacturing a semiconductor device includes forming a memory element in a dielectric layer. A first conductive layer is deposited on the dielectric layer and the memory element by atomic layer deposition, and a second conductive layer is deposited on the first conductive layer by physical vapor deposition. In the method, the first and second conductive layers are patterned into an electrode on the memory element.Type: GrantFiled: October 30, 2018Date of Patent: October 26, 2021Assignee: International Business Machines CorporationInventors: Kevin W. Brew, Iqbal Rashid Saraf, Injo Ok, Nicole Saulnier, Praneet Adusumilli
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Publication number: 20210305503Abstract: A method of forming a phase change memory device is provided. The method includes forming a spacer layer on a substrate, and forming a heater terminal contact in the spacer layer. The method further includes forming a liner layer on the heater terminal contact and the spacer layer, and forming a heater terminal in electrical contact with the heater terminal contact in the liner layer. The method further includes forming a conductive projection segment on the heater terminal. The method further includes forming a phase change material layer on the conductive projection segment, and forming a phase change material terminal on the phase change material layer, wherein an electrical current can pass between the heater terminal and the phase change material terminal through the phase change material layer.Type: ApplicationFiled: March 24, 2020Publication date: September 30, 2021Inventors: Timothy Mathew Philip, Nicole Saulnier, Lawrence A. Clevenger
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Publication number: 20210280422Abstract: A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.Type: ApplicationFiled: May 24, 2021Publication date: September 9, 2021Inventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson M. Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
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Patent number: 11043494Abstract: A method for fabricating fin field effect transistors comprises creating a pattern of self-aligned small cavities for P-type material growth using at least two hard mask layers, generating a pre-defined isolation area around each small cavity using a vertical spacer, selectively removing N-type material from the self-aligned small cavities, and growing P-type material in the small cavities. The P-type material may be silicon germanium (SiGe) and the N-type material may be tensile Silicon (t-Si). The pattern of self-aligned small cavities for P-type material growth is created by depositing two hard mask materials over a starting substrate wafer, selectively depositing photo resist over a plurality N-type areas, reactive ion etching to remove the second hard mask layer material over areas not covered by photo resist to create gaps in second hard mask layer, and removing the photo resist to expose the second hard mask material in the N-type areas.Type: GrantFiled: July 2, 2019Date of Patent: June 22, 2021Assignee: International Business Machines CorporationInventors: Lawrence A. Clevenger, Leigh Anne H. Clevenger, Mona A. Ebrish, Gauri Karve, Fee Li Lie, Deepika Priyadarshini, Indira Priyavarshini Seshadri, Nicole A. Saulnier
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Patent number: 11022891Abstract: A method for removing photoresist bridging defects includes coating a photoresist layer over a dielectric layer formed over a substrate, applying a first developer that results in formation of one or more photoresist bridging defects, and applying a second developer to remove the one or more photoresist bridging defects. The first developer is an aqueous base developer and the second developer is a reverse tone weak developer (RTWD), the RTWD being a mixture of a first (good) solvent and a second (bad) solvent for the photoresist.Type: GrantFiled: November 1, 2017Date of Patent: June 1, 2021Assignee: International Business Machines CorporationInventors: Zhenxing Bi, Karen E. Petrillo, Nicole A. Saulnier, Hao Tang
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Patent number: 11022890Abstract: A method for removing photoresist bridging defects includes coating a photoresist layer over a dielectric layer formed over a substrate, applying a first developer that results in formation of one or more photoresist bridging defects, and applying a second developer to remove the one or more photoresist bridging defects. The first developer is an aqueous base developer and the second developer is a reverse tone weak developer (RTWD), the RTWD being a mixture of a first (good) solvent and a second (bad) solvent for the photoresist.Type: GrantFiled: February 23, 2017Date of Patent: June 1, 2021Assignee: International Business Machines CorporationInventors: Zhenxing Bi, Karen E. Petrillo, Nicole A. Saulnier, Hao Tang
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Patent number: 11024715Abstract: Semiconductor devices include a first semiconductor fin. A first gate stack is formed over the first semiconductor fin. Source and drain regions are formed on respective sides of the first gate stack. An interlayer dielectric is formed around the first gate stack. A gate cut plug is formed from a dielectric material at an end of the first gate stack.Type: GrantFiled: February 21, 2020Date of Patent: June 1, 2021Assignee: Tessera, Inc.Inventors: John R. Sporre, Siva Kanakasabapathy, Andrew M. Greene, Jeffrey Shearer, Nicole A. Saulnier
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Patent number: 11018007Abstract: A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.Type: GrantFiled: November 6, 2019Date of Patent: May 25, 2021Assignee: Tessera, Inc.Inventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson M. Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
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Publication number: 20210135104Abstract: A phase change material memory device is provided. The phase change material memory device includes one or more electrical contacts in a substrate, and a dielectric cover layer on the electrical contacts and substrate. The phase change material memory device further includes a lower conductive shell in a trench above one of the one or more electrical contacts, and an upper conductive shell on the lower conductive shell in the trench. The phase change material memory device further includes a conductive plug filling the upper conductive shell. The phase change material memory device further includes a liner layer on the dielectric cover layer and conductive plug, and a phase change material block on the liner layer on the dielectric cover layer and in the trench.Type: ApplicationFiled: November 1, 2019Publication date: May 6, 2021Inventors: Injo Ok, Kevin W. Brew, Timothy M. Philip, Muthumanickam Sankarapandian, Sanjay C. Mehta, Nicole Saulnier, Steven M. Mcdermott
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Patent number: 10957583Abstract: An interconnect structure having a pitch of less than 40 nanometers and a self-aligned quadruple patterning process for forming the interconnect structure includes three types of lines: a ? line defined by a patterned bottom mandrel formed in the self-aligned quadruple patterning process; a ? line defined by location underneath a top mandrel formed in the self-aligned quadruple patterning process; and an ? line defined by elimination located underneath neither the top mandrel or the bottom mandrel formed in the self-aligned quadruple patterning process. The interconnect structure further includes multi-track jogs selected from a group consisting of a ??? jog; a ??? jog; an ??? jog; a ??? jog, and combinations thereof. The first and third positions refer to the uncut line and the second position refers to the cut line in the self-aligned quadruple patterning process.Type: GrantFiled: August 28, 2019Date of Patent: March 23, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann A. M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
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Patent number: 10937961Abstract: A Phase-change-memory (PCM) cell and method of forming the PCM are provided. In an illustrative embodiment, a method of forming a PCM cell includes forming a first layer of a first germanium-antimony-tellurium (GST) type material over at least a portion of the bottom and sides of a pore through a dielectric layer of low dielectric material to a bottom electrode. The method also includes forming a second layer of a second GST type material over the first GST type material along the bottom and sides of the pore over the bottom electrode. The first GST type material is different from the second GST type material.Type: GrantFiled: November 6, 2018Date of Patent: March 2, 2021Assignee: International Business Machines CorporationInventors: Injo Ok, Myung-Hee Na, Nicole Saulnier, Balasubramanian Pranatharthiharan
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Patent number: 10903418Abstract: A phase change material (“PCM”) device is described. A non-limiting example of the PCM device includes a bottom electrode including a low resistivity material and a PCM material over the bottom electrode. The PCM device has a top electrode over the PCM material.Type: GrantFiled: November 19, 2018Date of Patent: January 26, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ruqiang Bao, Nicole Saulnier