Abstract: Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures using a selective bottom-up approach, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a substrate. The vertical arrangement of nanowires has one or more active nanowires above one or more oxide nanowires. A first gate stack is over and around the one or more active nanowires. A second gate stack is over and around the one or more oxide nanowires.

Abstract: Preparation of capped metal oxide nanocrystals comprising a metal oxide shell that are photocatalytically and thermally stable and their dispersions in monomers, oligomers, and polymers, as well as the resulting formulations and nanocomposite films. These nanocrystals are highly monodisperse with nanocrystal size between 3-100 n. Resultant formulations incorporating these nanocrystals and a matrix material are highly stable and result in nanocomposites that have high refractive index, are highly transparent, have minimal to no change in absorption upon thermal or UV processing and are optically transparent in the visible wavelengths with very little or no scattering.

Abstract: Integrated circuitry comprising a ribbon or wire (RoW) transistor stack within which the transistors have different threshold voltages (Vt). In some examples, a gate electrode of the transistor stack may include only one workfunction metal. A metal oxide may be deposited around one or more channels of the transistor stack as a solid-state source of a metal oxide species that will diffuse toward the channel region(s). As diffused, the metal oxide may remain (e.g., as a silicate, or hafnate) in close proximity to the channel region, thereby altering the dipole properties of the gate insulator material. Different channels of a transistor stack may be exposed to differing amounts or types of the metal oxide species to provide a range of Vt within the stack. After diffusion, the metal oxide may be stripped as sacrificial, or retained.

Abstract: Embodiments disclosed herein include semiconductor devices and methods of making such devices. In an embodiment, the semiconductor device comprises a plurality of stacked semiconductor channels comprising first semiconductor channels and second semiconductor channels over the first semiconductor channels. In an embodiment a spacing is between the first semiconductor channels and the second semiconductor channels. The semiconductor device further comprises a gate dielectric surrounding individual ones of the semiconductor channels of the plurality of stacked semiconductor channels. In an embodiment, a first workfunction metal surrounds the first semiconductor channels, and a second workfunction metal surrounds the second semiconductor channels.

Abstract: Embodiments disclosed herein include semiconductor devices and methods of making such devices. In an embodiment, the semiconductor device comprises a plurality of stacked semiconductor channels comprising first semiconductor channels and second semiconductor channels over the first semiconductor channels. In an embodiment a spacing is between the first semiconductor channels and the second semiconductor channels. The semiconductor device further comprises a gate dielectric surrounding individual ones of the semiconductor channels of the plurality of stacked semiconductor channels. In an embodiment, a first workfunction metal surrounds the first semiconductor channels, and a second workfunction metal surrounds the second semiconductor channels.

Abstract: Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures using a selective bottom-up approach, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a substrate. The vertical arrangement of nanowires has one or more active nanowires above one or more oxide nanowires. A first gate stack is over and around the one or more active nanowires. A second gate stack is over and around the one or more oxide nanowires.

Abstract: Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures using a selective bottom-up approach, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a substrate. The vertical arrangement of nanowires has one or more active nanowires above one or more oxide nanowires. A first gate stack is over and around the one or more active nanowires. A second gate stack is over and around the one or more oxide nanowires.

Abstract: Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures using a selective bottom-up approach, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a substrate. The vertical arrangement of nanowires has one or more active nanowires above one or more oxide nanowires. A first gate stack is over and around the one or more active nanowires. A second gate stack is over and around the one or more oxide nanowires.

Abstract: Integrated circuitry comprising a ribbon or wire (RoW) transistor stack within which the transistors have different threshold voltages (Vt). In some examples, a gate electrode of the transistor stack may include only one workfunction metal. A metal oxide may be deposited around one or more channels of the transistor stack as a solid-state source of a metal oxide species that will diffuse toward the channel region(s). As diffused, the metal oxide may remain (e.g., as a silicate, or hafnate) in close proximity to the channel region, thereby altering the dipole properties of the gate insulator material. Different channels of a transistor stack may be exposed to differing amounts or types of the metal oxide species to provide a range of Vt within the stack. After diffusion, the metal oxide may be stripped as sacrificial, or retained.

Abstract: Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures using a selective bottom-up approach, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a substrate. The vertical arrangement of nanowires has one or more active nanowires above one or more oxide nanowires. A first gate stack is over and around the one or more active nanowires. A second gate stack is over and around the one or more oxide nanowires.

Abstract: An oropharyngeal airway device includes an elongated hollow body having proximal and distal ends, and a collar secured to the proximal end of the elongated hollow body. The device also includes an aspiration tube and an adapter where the adapter has a first open end and an opposing second open end. The first and second open ends are each coupled to the aspiration tube. In addition, the device includes a delivery conduit coupled to the adapter and positioned within the elongated hollow body in order to deliver gas from a gas supply to the distal end of the elongated hollow body and into an airway of a patient. The device includes at least one fastener within the collar for removably securing the adapter to the collar.

Abstract: Embodiments disclosed herein include semiconductor devices and methods of making such devices. In an embodiment, the semiconductor device comprises a plurality of stacked semiconductor channels comprising first semiconductor channels and second semiconductor channels over the first semiconductor channels. In an embodiment a spacing is between the first semiconductor channels and the second semiconductor channels. The semiconductor device further comprises a gate dielectric surrounding individual ones of the semiconductor channels of the plurality of stacked semiconductor channels. In an embodiment, a first workfunction metal surrounds the first semiconductor channels, and a second workfunction metal surrounds the second semiconductor channels.

Abstract: Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures using a selective bottom-up approach, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a substrate. The vertical arrangement of nanowires has one or more active nanowires above one or more oxide nanowires. A first gate stack is over and around the one or more active nanowires. A second gate stack is over and around the one or more oxide nanowires.

Abstract: A vial assembly may include a vial having a body to hold a liquid material, and a neck extending from the body. The neck may include a multi-use surface configured to permit access to the liquid material. The vial assembly may include a cap to be received by the neck and to cover the multi-use surface. The cap may include a base having a first major surface, and a second major surface opposite of the first major surface, arms extending from the second major surface, and a rupturable reservoir of disinfectant material carried by the base between the first major surface and the second major surface. One or more of the first major surface and the second major surface may be flexible so as to rupture the rupturable reservoir when the cap is received by the neck.

Abstract: An oropharyngeal airway device includes an elongated hollow body having proximal and distal ends, and a collar secured to the proximal end of the elongated hollow body. The device also includes an aspiration tube and an adapter where the adapter has a first open end and an opposing second open end. The first and second open ends are each coupled to the aspiration tube. In addition, the device includes a delivery conduit coupled to the adapter and positioned within the elongated hollow body in order to deliver gas from a gas supply to the distal end of the elongated hollow body and into an airway of a patient. The device includes at least one fastener within the collar for removably securing the adapter to the collar.

Abstract: A vial assembly may include a vial having a body to hold a liquid material, and a neck extending from the body. The neck may include a multi-use surface configured to permit access to the liquid material. The vial assembly may include a cap to be received by the neck and to cover the multi-use surface. The cap may include a base having a first major surface, and a second major surface opposite of the first major surface, arms extending from the second major surface, and a rupturable reservoir of disinfectant material carried by the base between the first major surface and the second major surface. One or more of the first major surface and the second major surface may be flexible so as to rupture the rupturable reservoir when the cap is received by the neck.

Abstract: An article of luggage that has a built in storage compartment with customizable departments, that includes a top portion having at least two side walls, a closeable top, a closed bottom having an exterior bottom surface and an interior top compartment. This article of luggage also includes an open bottom portion having at least two side walls, a closed top having an exterior top surface, a closed bottom an interior bottom compartment and at least one access opening into the interior bottom compartment, and a compartmentalized tray having a plurality of individual removable compartments. A removable tray positioned within the interior bottom portion having removable interconnected walls cooperating to define a plurality of individual storage compartments. A track system is included to attach the top portion to the bottom portion, where the track system has a first component and a second component that slidingly engage one another.

Abstract: A cap for disposable beverage cans, the cap comprising: a top surface of clear plastic, the top surface including a drinking spout; a circumferential lip surrounding the top surface and extending upwardly relative thereto; and a circumferential sidewall extending downwardly relative to the top surface, the circumferential sidewall tapering outwardly from the top surface to a lower edge of the sidewall.

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.