Abstract: A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.

Abstract: A method of generating a plurality of photomasks includes generating a circuit graph. The circuit graph comprises a plurality of vertices and a plurality of edges. Each of the plurality of vertices is representative of one of a plurality of conductive lines. The plurality of edges are representative of a spacing between the conductive lines less than an acceptable minimum distance. Kn+1 graph comprising a first set of vertices selected from the plurality of vertices connected in series by a first set of edges selected from the plurality of edges and having at least one non-series edge connection between a first vertex and a second vertex selected from the first set of vertices is reduced by merging a third vertex into a fourth vertex selected from the first set of the plurality of vertices. An n-pattern conflict check is performed and the photomasks generated based on the result.

Abstract: An IC device includes an interlayer dielectric (ILD), a first tower structure embedded in the ILD, and a first ring region including a portion of the ILD that extends around the first tower structure. The first tower structure includes a plurality of first conductive patterns in a plurality of metal layers, and a plurality of first vias between the plurality of metal layers along a thickness direction of the IC device. The plurality of first conductive patterns and the plurality of first vias are coupled to each other to form the first tower structure. The plurality of first conductive patterns is confined by the first ring region, without extending beyond the first ring region. The first tower structure is a dummy tower structure.

Abstract: A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.

Abstract: A method of generating a plurality of photomasks includes generating a circuit graph. The circuit graph comprises a plurality of vertices and a plurality of edges. Each of the plurality of vertices is representative of one of a plurality of conductive lines. The plurality of edges are representative of a spacing between the conductive lines less than an acceptable minimum distance. Kn+1 graph comprising a first set of vertices selected from the plurality of vertices connected in series by a first set of edges selected from the plurality of edges and having at least one non-series edge connection between a first vertex and a second vertex selected from the first set of vertices is reduced by merging a third vertex into a fourth vertex selected from the first set of the plurality of vertices. An n-pattern conflict check is performed and the photomasks generated based on the result.

Abstract: A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.

Abstract: A method of generating a plurality of photomasks includes generating a circuit graph. The circuit graph comprises a plurality of vertices and a plurality of edges. Each of the plurality of vertices is representative of one of a plurality of conductive lines. The plurality of edges are representative of a spacing between the conductive lines less than an acceptable minimum distance. Kn+1 graph comprising a first set of vertices selected from the plurality of vertices connected in series by a first set of edges selected from the plurality of edges and having at least one non-series edge connection between a first vertex and a second vertex selected from the first set of vertices is reduced by merging a third vertex into a fourth vertex selected from the first set of the plurality of vertices. An n-pattern conflict check is performed and the photomasks generated based on the result.

Abstract: A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.

Abstract: A standard cell for a semiconductor device includes a plurality of features for performing the functionality of the standard cell. The standard cell further includes a first sensitivity region adjacent to a first edge of the standard cell. The standard cell further includes anchor nodes linked to corresponding features of the plurality of features, wherein a number of anchor nodes linked to each feature of the corresponding features is based on a position of an end of each feature of the corresponding features relative to the first sensitivity region.

Abstract: A method of generating a plurality of photomasks includes generating a circuit graph. The circuit graph comprises a plurality of vertices and a plurality of edges. Each of the plurality of vertices is representative of one of a plurality of conductive lines. The plurality of edges are representative of a spacing between the conductive lines less than an acceptable minimum distance. Kn+1 graph comprising a first set of vertices selected from the plurality of vertices connected in series by a first set of edges selected from the plurality of edges and having at least one non-series edge connection between a first vertex and a second vertex selected from the first set of vertices is reduced by merging a third vertex into a fourth vertex selected from the first set of the plurality of vertices. An n-pattern conflict check is performed and the photomasks generated based on the result.

Abstract: A method of generating a plurality of photomasks includes generating a circuit graph. The circuit graph comprises a plurality of vertices and a plurality of edges. Each of the plurality of vertices is representative of one of a plurality of conductive lines. The plurality of edges are representative of a spacing between the conductive lines less than an acceptable minimum distance. Kn+1 graph comprising a first set of vertices selected from the plurality of vertices connected in series by a first set of edges selected from the plurality of edges and having at least one non-series edge connection between a first vertex and a second vertex selected from the first set of vertices is reduced by merging a third vertex into a fourth vertex selected from the first set of the plurality of vertices. An n-pattern conflict check is performed and the photomasks generated based on the result.

Abstract: A standard cell for a semiconductor device includes a plurality of features for performing the functionality of the standard cell. The standard cell further includes a first sensitivity region adjacent to a first edge of the standard cell. The standard cell further includes anchor nodes linked to corresponding features of the plurality of features, wherein a number of anchor nodes linked to each feature of the corresponding features is based on a position of an end of each feature of the corresponding features relative to the first sensitivity region.

Abstract: A method for designing a semiconductor device includes establishing boundary conditions for a layout of each cell of a plurality of cells, wherein each cell has a plurality of features, and boundary conditions are established based on a proximity of each feature to a cell boundary of a corresponding cell. The method includes determining whether the layout of each cell is colorable based on a number of masks used to manufacture a layer of the semiconductor device, a minimum spacing requirement for the plurality of features, and the established boundary conditions. The method includes forming a layout of the layer of the semiconductor device by abutting a first cell of the plurality of cells with a second cell of the plurality of cells. The method includes reporting the layout of the layer of the semiconductor device as colorable without analyzing the layout of the layer of the semiconductor device.

Abstract: Methods of manufacturing a semiconductor device are described. In an embodiment, the method may include providing a substrate having a metal layer disposed thereon, the metal layer having a conductive trace pattern formed therein; depositing a dielectric material over the conductive trace pattern of the metal layer; determining a layout of a plurality of air gaps that will be formed in the dielectric material based on a design rule checking (DRC) procedure and the conductive trace pattern; and forming the plurality of air gaps in the dielectric material based on the layout of the plurality of air gaps.

Abstract: A method of generating a plurality of photomasks includes generating a circuit graph. The circuit graph comprises a plurality of vertices and a plurality of edges. Each of the plurality of vertices is representative of one of a plurality of conductive lines. The plurality of edges are representative of a spacing between the conductive lines less than an acceptable minimum distance. Kn+1 graph comprising a first set of vertices selected from the plurality of vertices connected in series by a first set of edges selected from the plurality of edges and having at least one non-series edge connection between a first vertex and a second vertex selected from the first set of vertices is reduced by merging a third vertex into a fourth vertex selected from the first set of the plurality of vertices. An n-pattern conflict check is performed and the photomasks generated based on the result.

Abstract: A method for designing a semiconductor device includes establishing boundary conditions for a layout of each cell of a plurality of cells, wherein each cell has a plurality of features, and boundary conditions are established based on a proximity of each feature to a cell boundary of a corresponding cell. The method includes determining whether the layout of each cell is colorable based on a number of masks used to manufacture a layer of the semiconductor device, a minimum spacing requirement for the plurality of features, and the established boundary conditions. The method includes forming a layout of the layer of the semiconductor device by abutting a first cell of the plurality of cells with a second cell of the plurality of cells. The method includes reporting the layout of the layer of the semiconductor device as colorable without analyzing the layout of the layer of the semiconductor device.

Abstract: A method of determining colorability of a layout includes generating a conflict diagram based on circuit information. The conflict diagram includes a plurality of nodes, each node of the plurality of nodes is connected to at least another node of the plurality of nodes by a link, and each node of the plurality of nodes has a degree equal to a number of links connected to the node. The method includes setting a degree of each anchor node within the conflict diagram to a value of n, where n is equal to a number of mask usable to manufacture the layout. The method further includes excluding, using a processor, nodes having a degree less than n from the conflict diagram. The method further includes performing a color status check on the conflict diagram after the excluding; and determining whether the layout is colorable based on the performed color status check.

Abstract: A method of determining colorability of a layout includes generating a conflict diagram based on circuit information. The conflict diagram includes a plurality of nodes, each node of the plurality of nodes is connected to at least another node of the plurality of nodes by a link, and each node of the plurality of nodes has a degree equal to a number of links connected to the node. The method includes setting a degree of each anchor node within the conflict diagram to a value of n, where n is equal to a number of mask usable to manufacture the layout. The method further includes excluding, using a processor, nodes having a degree less than n from the conflict diagram. The method further includes performing a color status check on the conflict diagram after the excluding; and determining whether the layout is colorable based on the performed color status check.

Abstract: Methods of manufacturing a semiconductor device are described. In an embodiment, the method may include providing a substrate having a metal layer disposed thereon, the metal layer having a conductive trace pattern formed therein; depositing a dielectric material over the conductive trace pattern of the metal layer; determining a layout of a plurality of air gaps that will be formed in the dielectric material based on a design rule checking (DRC) procedure and the conductive trace pattern; and forming the plurality of air gaps in the dielectric material based on the layout of the plurality of air gaps.

Abstract: The present disclosure relates a method of performing a design rule checking (DRC) procedure on a multi-tiered integrated chip. In some embodiments, the method is performed by defining layer databases for a plurality of tiers within a multi-tiered integrated chip. The layer databases respectively identify design layers within an associated tier. A DRC (design rule checking) deck is then generated, which defines one or more individual design layer definitions as a function of a plurality of layer databases, so that the one or more individual design layer definitions are defined for a plurality of tiers. One or more design rules for the one or more individual design layer definitions are defined within the DRC deck. Since the individual design layer definitions are defined as functions of the plurality of layer databases, the design rules apply to the plurality of tiers.