Abstract: Methods form devices by creating openings in sacrificial gates between nanosheet stacks (alternating layers of a first material and channel structures), forming spacers in the openings, and removing the sacrificial gates to leave the spacers. The first material is then removed from between the channel structures. A first work function metal is formed around and between the channel structures. Next, first stacks (of the stacks) are protected with a mask to leave second stacks (of the stacks) exposed. Then, the first work function metal is removed from the second stacks while the first stacks are protected by the mask and the spacers. Subsequently, a second work function metal is formed around and between the channel structures of the second stacks. A gate material is then formed over the first work function metal and the second work function metal.

Abstract: The disclosure relates to gate-all-around (GAA) transistors with a spacer support, and related methods. A GAA transistor according to embodiments of the disclosure includes: at least one semiconductor channel structure extending between a source terminal and a drain terminal; a spacer support having a first portion thereof positioned underneath and a second portion thereof positioned alongside a first portion of the at least one semiconductor channel structure; and a gate metal surrounding a second portion of the at least one semiconductor channel structure between the source and drain terminals; wherein the spacer support is positioned between the gate metal and the source or drain terminal.

Abstract: Methods form devices by creating openings in sacrificial gates between nanosheet stacks (alternating layers of a first material and channel structures), forming spacers in the openings, and removing the sacrificial gates to leave the spacers. The first material is then removed from between the channel structures. A first work function metal is formed around and between the channel structures. Next, first stacks (of the stacks) are protected with a mask to leave second stacks (of the stacks) exposed. Then, the first work function metal is removed from the second stacks while the first stacks are protected by the mask and the spacers. Subsequently, a second work function metal is formed around and between the channel structures of the second stacks. A gate material is then formed over the first work function metal and the second work function metal.

Abstract: A method includes forming a first gate structure above a first region of a semiconducting substrate. A first sidewall spacer is formed adjacent the first gate structure. The first gate structure and the first sidewall spacer are recessed to define a first gate contact cavity. A second sidewall spacer is formed in the first gate contact cavity. A first conductive gate contact is formed in the first gate contact cavity. The second sidewall spacer is removed to define a first spacer cavity. A conductive material is formed in the first spacer cavity to form a first conductive spacer contacting the first conductive gate contact.

Abstract: The disclosure relates to gate-all-around (GAA) transistors with a spacer support, and related methods. A GAA transistor according to embodiments of the disclosure includes: at least one semiconductor channel structure extending between a source terminal and a drain terminal; a spacer support having a first portion thereof positioned underneath and a second portion thereof positioned alongside a first portion of the at least one semiconductor channel structure; and a gate metal surrounding a second portion of the at least one semiconductor channel structure between the source and drain terminals; wherein the spacer support is positioned between the gate metal and the source or drain terminal.

Abstract: A semiconductor structure including a first substantially U-shaped and/or H-shaped channel is disclosed. The semiconductor structure may further include a second substantially U-shaped and/or H-shaped channel positioned above the first channel. A method of forming a substantially U-shaped and/or H-shaped channel is also disclosed. The method may include forming a fin structure on a substrate where the fin structure includes an alternating layers of sacrificial semiconductor and at least one silicon layer or region. The method may further include forming additional silicon regions vertically on sidewalls of the fin structure. The additional silicon regions may contact the silicon layer or region of the fin structure to form the substantially U-shaped and/or H-shaped channel(s). The method may further include removing the sacrificial semiconductor layers and forming a gate structure around the substantially U-shaped and/or substantially H-shaped channels.

Abstract: A semiconductor structure including a first substantially U-shaped and/or H-shaped channel is disclosed. The semiconductor structure may further include a second substantially U-shaped and/or H-shaped channel positioned above the first channel. A method of forming a substantially U-shaped and/or H-shaped channel is also disclosed. The method may include forming a fin structure on a substrate where the fin structure includes an alternating layers of sacrificial semiconductor and at least one silicon layer or region. The method may further include forming additional silicon regions vertically on sidewalls of the fin structure. The additional silicon regions may contact the silicon layer or region of the fin structure to form the substantially U-shaped and/or H-shaped channel(s). The method may further include removing the sacrificial semiconductor layers and forming a gate structure around the substantially U-shaped and/or substantially H-shaped channels.

Abstract: The disclosure is directed to gate all-around integrated circuit structures, finFETs having a dielectric isolation, and methods of forming the same. The gate all-around integrated circuit structure may include a first insulator region within a substrate; a pair of remnant liner stubs disposed within the first insulator region; a second insulator region laterally adjacent to the first insulator region within the substrate; a pair of fins over the first insulator region, each fin in the pair of fins including an inner sidewall facing the inner sidewall of an adjacent fin in the pair of fins and an outer sidewall opposite the inner sidewall; and a gate structure substantially surrounding an axial portion of the pair of fins and at least partially disposed over the first and second insulator regions, wherein each remnant liner stub is substantially aligned with the inner sidewall of a respective fin of the pair of fins.

Abstract: A structure and method for forming sets of contact structures to source/drain regions of complimentary N-type field effect transistors (NFETs) and P-type field effect transistors (PFETs). The structure including a NFET structure including a first fin positioned on a substrate and a PFET structure including a second fin positioned on the substrate, wherein a source/drain region (S/D) of the first fin and a S/D of the second fin include non-uniform openings at an uppermost surface. A method of forming non-uniformly openings in the S/Ds of the complimentary NFETs and PFETs including forming mask on the PFET to protect the structure during formation of openings in the NFET S/D. A method of forming non-uniform openings in the S/D of the complimentary NFETs and PFETs including reducing the epitaxially growth of the NFET S/D to form an opening therein.

Abstract: The disclosure is directed to gate all-around integrated circuit structures, finFETs having a dielectric isolation, and methods of forming the same. The gate all-around integrated circuit structure may include a first insulator region within a substrate; a pair of remnant liner stubs disposed within the first insulator region; a second insulator region laterally adjacent to the first insulator region within the substrate; a pair of fins over the first insulator region, each fin in the pair of fins including an inner sidewall facing the inner sidewall of an adjacent fin in the pair of fins and an outer sidewall opposite the inner sidewall; and a gate structure substantially surrounding an axial portion of the pair of fins and at least partially disposed over the first and second insulator regions, wherein each remnant liner stub is substantially aligned with the inner sidewall of a respective fin of the pair of fins.

Abstract: One illustrative device disclosed herein includes, among other things, a stepped conductive source/drain structure with a first recess defined therein and a stepped final gate structure with a second recess defined therein, wherein, when viewed from above, the second recess is axially and laterally offset from the first recess. In this example, the device also includes a layer of insulating material positioned above the stepped conductive source/drain structure and the stepped final gate structure, a conductive gate (CB) contact that is conductively coupled to the stepped final gate structure and a conductive source/drain (CA) contact that is conductively coupled to the stepped conductive source/drain structure.

Abstract: A method includes forming a first gate structure above a first region of a semiconducting substrate. A first sidewall spacer is formed adjacent the first gate structure. The first gate structure and the first sidewall spacer are recessed to define a first gate contact cavity. A second sidewall spacer is formed in the first gate contact cavity. A first conductive gate contact is formed in the first gate contact cavity. The second sidewall spacer is removed to define a first spacer cavity. A conductive material is formed in the first spacer cavity to form a first conductive spacer contacting the first conductive gate contact.

Abstract: One illustrative device disclosed herein includes, among other things, a stepped conductive source/drain structure with a first recess defined therein and a stepped final gate structure with a second recess defined therein, wherein, when viewed from above, the second recess is axially and laterally offset from the first recess. In this example, the device also includes a layer of insulating material positioned above the stepped conductive source/drain structure and the stepped final gate structure, a conductive gate (CB) contact that is conductively coupled to the stepped final gate structure and a conductive source/drain (CA) contact that is conductively coupled to the stepped conductive source/drain structure.

Abstract: Methods for fabricating fins for a fin-type field-effect transistor (FinFET) and fin structures for a FinFET. A conformal layer is formed that includes respective first portions on sidewalls of first hardmask sections previously formed on a substrate, a recess between the first portions on the sidewalls of each adjacent pair of the first hardmask sections, and a second portion between the substrate and the recess. The conformal layer is constituted by a second material chosen to etch selectively to the first material constituting the first hardmask sections. A spacer is formed in each recess and masks the respective second portion of the conformal layer. The conformal layer is then etched to form second hardmask sections each comprised of one of the second portions of the conformal layer. The substrate is etched with the first and second hardmask sections masking the substrate to form a plurality of fins.

Abstract: A transistor is formed above an active region. The transistor includes a gate structure, a first gate cap layer and a first sidewall spacer positioned adjacent sidewalls of the gate structure. Source/drain contacts are formed adjacent the first sidewall spacer. The first gate cap layer and a portion of the first sidewall spacer are removed to define a gate contact cavity that exposes a portion of the gate structure and an upper portion of the SD contacts. A second spacer and a conductive gate plug are formed in the gate contact cavity. Upper portions of the SD contacts positioned adjacent the second spacer are removed to define a gate cap cavity. A second gate cap layer is formed in the gate cap cavity. An insulating layer is formed above the second gate cap layer. A first conductive structure is formed in the insulating layer conductively coupled to the gate structure.

Abstract: Methods for fabricating fins for a fin-type field-effect transistor (FinFET) and fin structures for a FinFET. A conformal layer is formed that includes respective first portions on sidewalls of first hardmask sections previously formed on a substrate, a recess between the first portions on the sidewalls of each adjacent pair of the first hardmask sections, and a second portion between the substrate and the recess. The conformal layer is constituted by a second material chosen to etch selectively to the first material constituting the first hardmask sections. A spacer is formed in each recess and masks the respective second portion of the conformal layer. The conformal layer is then etched to form second hardmask sections each comprised of one of the second portions of the conformal layer. The substrate is etched with the first and second hardmask sections masking the substrate to form a plurality of fins.

Abstract: In a semiconductor device, a relatively deep germanium implant and activation thereof precedes deposition of the nickel for nickel silicide formation. The activation of the germanium causes the lattice constant in the region of the implant to be increased over the lattice constant of the background substrate, which is preferably silicon. The effect is that the lattice so altered avoids formation of nickel disilicide. The result is that the nickel silicide spiking is avoided.

Abstract: In one embodiment, a method for forming a semiconductor device is described. A semiconductor substrate has a first portion and a second portion. A first dielectric layer formed over the first portion of the semiconductor substrate and a second dielectric layer is formed over the second portion of the semiconductor substrate. A cap that may include silicon, such as polysilicon, is formed over the first dielectric layer. A first electrode layer is formed over the cap and a second electrode layer is formed over the second dielectric.

Abstract: A method for integrating an optical device and an electronic device on a semiconductor substrate comprises forming openings within an active semiconductor layer in a first region of the semiconductor substrate, wherein the first region corresponds to an electronic device portion and the second region corresponds to an optical device portion. A semiconductor layer is epitaxially grown overlying an exposed active semiconductor layer in the second region, the epitaxially grown semiconductor layer corresponding to an optical device region. At least a portion of an electronic device is formed on the active semiconductor layer within the electronic device portion of the semiconductor substrate. The method further includes forming openings within the epitaxially grown semiconductor layer of the optical device portion of the semiconductor substrate, wherein the openings define one or more features of an optical device.

Abstract: A semiconductor structure has a waveguide a transistor on the same integrated circuit. One trench isolation technique is used for defining a transistor region and another is used for optimizing a lateral boundary of the waveguide. Both the waveguide and the transistor have trenches with liners that can be separately optimized. The transistor has a salicide for source/drain contacts. During this process, a salicide block is used over the waveguide to prevent salicide formation in unwanted areas of the waveguide. The depth of the trench for the waveguide can be lower than that of the trench for the transistor isolation. Trench isolation depth can be set by an etch stop region that can be either a thin oxide layer or a buffer layer that is selectively etchable with respect to the top semiconductor layer and that can be used as a seed layer for growing the top semiconductor layer.