Patents by Inventor Nigel P. Hacker
Nigel P. Hacker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8440388Abstract: Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.Type: GrantFiled: November 28, 2005Date of Patent: May 14, 2013Assignee: Honeywell International Inc.Inventors: Nigel P. Hacker, Michael Thomas, James S. Drage
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Patent number: 7858294Abstract: Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.Type: GrantFiled: April 5, 2007Date of Patent: December 28, 2010Assignee: Honeywell International Inc.Inventors: Nigel P. Hacker, Michael Thomas, James S. Drage
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Patent number: 7678462Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: GrantFiled: July 11, 2005Date of Patent: March 16, 2010Assignee: Honeywell International, Inc.Inventors: Joseph Kennedy, Teresa Baldwin, Nigel P. Hacker, Richard Spear
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Patent number: 7029826Abstract: Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.Type: GrantFiled: June 19, 2001Date of Patent: April 18, 2006Assignee: Honeywell International Inc.Inventors: Nigel P. Hacker, Michael Thomas, James S. Drage
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Patent number: 7011889Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.Type: GrantFiled: February 19, 2002Date of Patent: March 14, 2006Assignee: Honeywell International Inc.Inventors: William B. Bedwell, Nigel P. Hacker, Roger Y. Leung, Nancy Iwamoto, Jan Nedbal, Songyuan Xie, Lorenza Moro, Shyama P. Mukherjee
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Patent number: 7012125Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic dyes incorporated into spin-on-glass materials. Suitable dyes are strongly absorbing over wavelength ranges around wavelengths such as 248 nm and 193 nm that may be used in photolithography. A method of making dyed spin-on-glass materials includes combining one or more organic dyes with alkoxysilane reactants during synthesis of the spin-on-glass materials.Type: GrantFiled: November 5, 2001Date of Patent: March 14, 2006Assignee: Honeywell International Inc.Inventors: Joseph Kennedy, Teresa Baldwin, Nigel P. Hacker, Richard Spear
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Patent number: 6962727Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula 1: [Y0.01-1.0SiO1.5-2]a{Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c (where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula 1; b is from 2 percent to 50 percent of Formula 1; and c is from 20 percent to 80 percent of Formula 1. The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.Type: GrantFiled: June 3, 2002Date of Patent: November 8, 2005Assignee: Honeywell International Inc.Inventors: William B. Bedwell, Nigel P. Hacker, Roger Y. Leung, Nancy Iwamoto, Jan Nedbal, Songyuan Xie, Lorenza Moro, Shyama P. Mukherjee
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Patent number: 6956097Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: GrantFiled: February 14, 2002Date of Patent: October 18, 2005Assignee: Honeywell International Inc.Inventors: Joseph Kennedy, Teresa Baldwin, Nigel P. Hacker, Richard Spear
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Patent number: 6838124Abstract: There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.Type: GrantFiled: May 16, 2002Date of Patent: January 4, 2005Assignee: Honeywell International Inc.Inventor: Nigel P. Hacker
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Patent number: 6743856Abstract: Novel processes for preparing hydridosiloxane and organohydridosiloxane resins are disclosed. The processes of the invention broadly provide for the steps of contacting a silane monomer with a phase transfer catalyst in the presence of a reaction mixture that includes a nonpolar, e.g., hydrocarbon, solvent, and a polar solvent, e.g., alcohol and water. The process is conducted under conditions effective to catalytically convert said silane monomer into hydridosiloxane and organohydridosiloxane resins. Recovery of the products is advantageously aided by the ease of separating the phase transfer catalyst from the dual phase reaction mixture by separating the immiscible polar solvent carrying the catalyst from the nonpolar solvent, that carries the product. Hydridosiloxane and organohydridosiloxane resins produced by the processes of the invention are also provided.Type: GrantFiled: February 16, 2000Date of Patent: June 1, 2004Assignee: Honeywell International Inc.Inventors: Nigel P. Hacker, Lisa K. Figge, Scott Lefferts
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Publication number: 20040033371Abstract: There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C1 to C100 alkyl group. Also provided are films made from these precursors and objects comprising these films.Type: ApplicationFiled: May 27, 2003Publication date: February 19, 2004Inventor: Nigel P. Hacker
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Publication number: 20040013858Abstract: Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.Type: ApplicationFiled: July 18, 2003Publication date: January 22, 2004Inventors: Nigel P. Hacker, Michael Thomas, James S. Drage
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Publication number: 20030105264Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.Type: ApplicationFiled: February 19, 2002Publication date: June 5, 2003Inventors: William B. Bedwell, Nigel P. Hacker, Roger Y. Leung, Nancy Iwamoto, Jan Nedbal, Songyuan Xie, Lorenza Moro, Shyama P. Mukherjee
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Publication number: 20030031789Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I.Type: ApplicationFiled: June 3, 2002Publication date: February 13, 2003Inventors: William B. Bedwell, Nigel P. Hacker, Roger Y. Leung, Nancy Iwamoto, Jan Nedbal, Songyuan Xie, Lorenza Moro, Shyama P. Mukherjee
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Patent number: 6512071Abstract: An organohydridosiloxane polymer having a cage conformation, at least approximately 40 Mole percent carbon containing substituents and a dielectric constant of less than about 2.7 is presented. Each silicon atom of the cage polymer is bonded to at least three oxygen atoms and to either a hydrogen atom or an organic substituent. By providing such a caged structure with essentially no hydroxyl or alkoxy substituents, either on the polymer backbone or at terminal silicon atoms, essentially no chain lengthening polymerization can occur in solution. Such organohydridosiloxane resins having a molecular weight in the range from about 400 to about 200,000 atomic mass units were formed using a dual phase solvent system and either a solid phase or phase transfer catalyst to assist the condensation of hydridotrihalosilane with at least one organotrihalosilane.Type: GrantFiled: June 30, 2000Date of Patent: January 28, 2003Assignee: Honeywell International Inc.Inventors: Nigel P. Hacker, Scott Lefferts, Lisa Figge
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Patent number: 6506497Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: GrantFiled: January 26, 2000Date of Patent: January 14, 2003Assignee: Honeywell International Inc.Inventors: Joseph Kennedy, Teresa Baldwin, Nigel P. Hacker, Richard Spear
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Patent number: 6472076Abstract: There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C1 to C100 alkyl group. Also provided are films made from these precursors and objects comprising these films.Type: GrantFiled: October 18, 1999Date of Patent: October 29, 2002Assignee: Honeywell International Inc.Inventor: Nigel P. Hacker
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Publication number: 20020136910Abstract: There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C1 to C100 alkyl group. Also provided are films made from these precursors and objects comprising these films.Type: ApplicationFiled: May 16, 2002Publication date: September 26, 2002Inventor: Nigel P. Hacker
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Publication number: 20020127416Abstract: There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.Type: ApplicationFiled: May 16, 2002Publication date: September 12, 2002Applicant: Honeywell International Inc.Inventor: Nigel P. Hacker
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Publication number: 20020128388Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: ApplicationFiled: February 14, 2002Publication date: September 12, 2002Applicant: AlliedSignal Inc.Inventors: Joseph Kennedy, Teresa Baldwin, Nigel P. Hacker, Richard Spear