Abstract: There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.

Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic dyes incorporated into spin-on-glass materials. Suitable dyes are strongly absorbing over wavelength ranges around wavelengths such as 248 nm and 193 nm that may be used in photolithography. A method of making dyed spin-on-glass materials includes combining one or more organic dyes with alkoxysilane reactants during synthesis of the spin-on-glass materials.

Abstract: A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and 40 mole percent or greater of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 2.8 or lower.

Abstract: An organohydridosiloxane polymer having a cage conformation, between approximately 0.1 to 40 mole percent carbon-containing substituent, and a dielectric constant of less than about 3.0 is disclosed. Each silicon atom of the cage polymer is bonded to at least three oxygen atoms and to either a hydrogen atom or an organic substituent. By providing such a caged structure having essentially no hydroxyl or alkoxy substituents, either on the polymer backbone or at terminal silicon atoms, essentially no chain lengthening polymerization can occur in solution. Such organohydridosiloxane resins having a molecular weight in the range from about 400 to about 200,000 atomic mass units were formed using a dual phase solvent system and either a solid phase or a phase transfer catalyst to assist the condensation of hydridotrihalosilane with at least one organotrihalosilane.

Abstract: A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and up to 40 mole percent of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 3 or lower.

Abstract: Methods for removing unwanted siloxane and silsesquioxane dielectric film precursor residues from substrates and spin on coating devices are provided. The methods of the invention use liquid silicones to dissolve the film precursors. Solutions of the film precursors in the silicones do not undergo gelling or increase in molecular weight.

Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic dyes incorporated into spin-on-glass materials. Suitable dyes are strongly absorbing over wavelength ranges around wavelengths less than 260 nm such as 248 nm and 193 nm, that may be used in photolithography. A method of making dyed spin-on-glass materials includes combining one or more organic dyes with alkoxysilane reactants during synthesis of the spin-on-glass materials.

Abstract: An organohydridosiloxane polymer having a cage conformation, between approximately 0.1 to 40 mole percent carbon-containing substituent, and a dielectric constant of less than about 3.0 is disclosed. Each silicon atom of the cage polymer is bonded to at least three oxygen atoms and to either a hydrogen atom or an organic substituent. By providing such a caged structure having essentially no hydroxyl or alkoxy substituents, either on the polymer backbone or at terminal silicon atoms, essentially no chain lengthening polymerization can occur in solution. Such organohydridosiloxane resins having a molecular weight in the range from about 400 to about 200,000 atomic mass units were formed using a dual phase solvent system and either a solid phase or a phase transfer catalyst to assist the condensation of hydridotrihalosilane with at least one organotrihalosilane.

Abstract: A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and 40 mole percent or greater of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 2.8 or lower.

Abstract: A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and up to 40 mole percent of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 3 or lower.

Abstract: An organohydridosiloxane polymer having a cage conformation, at least approximately 40 Mole percent carbon containing substituents and a dielectric constant of less than about 2.7 is presented. Each silicon atom of the cage polymer is bonded to at least three oxygen atoms and to either a hydrogen atom or an organic substituent. By providing such a caged structure with essentially no hydroxyl or alkoxy substituents, either on the polymer backbone or at terminal silicon atoms, essentially no chain lengthening polymerization can occur in solution. Such organohydridosiloxane resins having a molecular weight in the range from about 400 to about 200,000 atomic mass units were formed using a dual phase solvent system and either a solid phase or phase transfer catalyst to assist the condensation of hydridotrihalosilane with at least one organotrihalosilane.

Abstract: Novel processes for preparing hydridosiloxane and organohydridosiloxane resins are disclosed. The processes of the invention broadly provide for the steps of contacting a silane monomer with a phase transfer catalyst in the presence of a reaction mixture that includes a nonpolar, e.g., hydrocarbon, solvent, and a polar solvent, e.g., alcohol and water. The process is conducted under conditions effective to catalytically convert said silane monomer into hydridosiloxane and organohydridosiloxane resins. Recovery of the products is advantageously aided by the ease of separating the phase transfer catalyst from the dual phase reaction mixture by separating the immiscible polar solvent carrying the catalyst from the nonpolar solvent that carries the product. Hydridosiloxane and organohydridosiloxane resins produced by the processes of the invention are also provided.

Abstract: Storage solutions of silsesquioxane and siloxane polymers are obtained by means of a silicon containing solvent composition. The solution has at least one polymer having a formula of [(HSiO.sub.1.5).sub.x O.sub.y ].sub.n, (HSiO.sub.1.5).sub.n, [(HSiO.sub.1.5).sub.x O.sub.y (RSiO.sub.1.5).sub.z ].sub.n, [(HSiO.sub.1.5).sub.x (RSiO.sub.1.5).sub.y ].sub.n or [(HSiO.sub.1.5).sub.x O.sub.y (RSiO.sub.1.5).sub.z ].sub.n wherein x=about 6 to about 20, y=1 to about 3, z=about 6 to about 20, n=1 to about 4,000, and each R is independently H, C.sub.1 to C.sub.8 alkyl or C.sub.6 to C.sub.12 aryl. The solvent has the formula of (CH.sub.3).sub.3 Si--O--[Si(CH.sub.3).sub.2 ].sub.a --Si(CH.sub.3).sub.3, (CH.sub.3 CH.sub.2)Si--O--[Si(CH.sub.3 CH.sub.2).sub.2 ].sub.a --SiCH.sub.3 CH.sub.2).sub.3, R.sub.3 Si--O--[SiR'.sub.2 ].sub.a --SiR.sub.3, [O--Si(CH.sub.3).sub.2 ].sub.b, [O--Si(CH.sub.3 CH.sub.2).sub.2 ].sub.b or [O--SiR'.sub.2 ].sub.n wherein a=0-5, b=3-5, and each R' is independently H or C.sub.1 to C.sub.8 alkyl.

Abstract: Novel processes for preparing hydridosiloxane and organohydridosiloxane resins are disclosed. The processes of the invention broadly provide for the steps of contacting a silane monomer with a solid state catalyst in the presence of a reaction mixture that includes a nonpolar, e.g., hydrocarbon, solvent, and a polar solvent, e.g., alcohol and water. The process is conducted under conditions effective to catalytically convert said silane monomer into hydridosiloxanes and organohydridosiloxanes. Recovery of the products is advantageously aided by the ease of separating the solid state catalyst from the reaction mixture. Hydridosiloxanes and organohydridosiloxanes resins produced by the processes of the invention are also provided.

Abstract: A triarylsulfonium salt is prepared in high yield and high purity by a two-step process involving a aryl Grignard reagent reacted with a diarylsulfoxide in a solvent which is a mixture of aliphatic and aromatic hydrocarbons, followed by a second step which is metathesis with ZMF.sub.6, where Z is a metal or metal-like anion, and M is antimony, arsenic or phosphorus, preferably employing an ammonium salt and carried out in a non-aqueous solvent.

Abstract: Diamond films are deposited at substrates below temperatures of 400.degree. C. by chemical vapor deposition using a high powered pulsed laser and a vapor which is an aliphatic carboxylic acid or an aromatic carboxylic anhydride.

Abstract: Alkyldiarylsulfonium salts of 9, 10,-dithiophenoxyanthracene are useful as photoinitiators in resist compositions, such as epoxy resin formulations, particularly using long wavelength light.