Patents by Inventor Nikhil Jain

Nikhil Jain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12254992
    Abstract: In an approach, a processor receives device identification information corresponding to at least one device local to a location of a transaction. A processor receives notification of an infected user. A processor determines that the infected user is associated with the transaction. A processor identifies a second user from the device identification information. A processor sends a notification to the second user.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: March 18, 2025
    Assignee: International Business Machines Corporation
    Inventors: Richard C. Johnson, Alex Richard Hubbard, Cody J. Murray, Vinay Pai, Nikhil Jain
  • Publication number: 20250080823
    Abstract: An optical communication system includes a display having display pixels operable to display an image and a digital camera disposed and operable to capture and record the displayed image. A digital camera frame rate can be greater than a display frame rate. Multiple digital cameras can be disposed and operable to capture and record the displayed image. A mirror can be disposed to reflect the image from the display to a digital camera. One or more intermediate digital cameras and displays can be disposed to capture and re-display the image for the digital camera. Images can include encoded addresses for the digital cameras. Synchronization display pixels can indicate new displayed images to trigger a digital camera to record the new displayed image. A camera light emitter can indicate that a digital camera has recorded a displayed image.
    Type: Application
    Filed: June 24, 2024
    Publication date: March 6, 2025
    Inventors: Ronald S. Cok, Nikhil Jain
  • Patent number: 12243913
    Abstract: Provided is a semiconductor device. The semiconductor device comprises a transistor comprising a plurality of source/drain epitaxies. The semiconductor device further comprises at least one backside power rail under the transistor. The semiconductor device further comprises a backside inter-layer dielectric (ILD) located between the plurality of source/drain epitaxies and the at least one power rail. The semiconductor device further comprises a first backside contact connecting a first source/drain epitaxy to the at least one backside power rail. The semiconductor device further comprises one or more contact placeholders formed under the other source/drain epitaxies.
    Type: Grant
    Filed: February 23, 2022
    Date of Patent: March 4, 2025
    Assignee: International Business Machines Corporation
    Inventors: Nikhil Jain, Sagarika Mukesh, Devika Sarkar Grant, Prabudhya Roy Chowdhury, Ruilong Xie, Kisik Choi
  • Publication number: 20250029165
    Abstract: In some aspects, a device may receive intent information associated with an interaction of a user with a retail entity. The device may obtain a set of recommendation parameters. The device may generate recommendation information associated with the user, the recommendation information being generated based at least in part on the intent information and the set of recommendation parameters. The device may provide the recommendation information for display to the user, the recommendation information including a list of recommended items. Numerous other aspects are described.
    Type: Application
    Filed: December 22, 2023
    Publication date: January 23, 2025
    Inventors: Nikhil JAIN, Megha DAGA, Rodney Gracian DSOUZA
  • Patent number: 12170008
    Abstract: In some aspects, a server device may obtain information relating to a location of a device that is to be delivered to a physical location associated with a recipient. The server device may transmit, based at least in part on the information indicating that the location of the device is at the physical location of the recipient, a first communication prompting the recipient to indicate whether the recipient is in possession of the device. The server device may receive a second communication indicating whether the recipient is in possession of the device. The server device may transmit a signal to cause a change of an activation state of one or more operations of the device based at least in part on whether the second communication indicates that the recipient is in possession of the device. Numerous other aspects are described.
    Type: Grant
    Filed: April 7, 2022
    Date of Patent: December 17, 2024
    Assignee: QUALCOMM Incorporated
    Inventors: Amit Mahajan, Nikhil Jain
  • Publication number: 20240234317
    Abstract: A semiconductor device includes: a channel having layers of silicon separated from each other; a metal gate in contact with the layers of silicon; source/drain regions adjacent to the metal gate; a frontside power rail extending through the layers of silicon; a dielectric separating the frontside power rail from the metal gate; a via-connect buried power rail extending through the dielectric and coupling the frontside power rail to the source/drain regions; and a backside power rail coupled to the frontside power rail. The layers of silicon are wrapped on three sides by the metal gate.
    Type: Application
    Filed: October 25, 2022
    Publication date: July 11, 2024
    Inventors: Nikhil Jain, Prabudhya Roy Chowdhury, Kisik Choi, Ruilong Xie
  • Publication number: 20240136288
    Abstract: A semiconductor device includes: a channel having layers of silicon separated from each other; a metal gate in contact with the layers of silicon; source/drain regions adjacent to the metal gate; a frontside power rail extending through the layers of silicon; a dielectric separating the frontside power rail from the metal gate; a via-connect buried power rail extending through the dielectric and coupling the frontside power rail to the source/drain regions; and a backside power rail coupled to the frontside power rail. The layers of silicon are wrapped on three sides by the metal gate.
    Type: Application
    Filed: October 24, 2022
    Publication date: April 25, 2024
    Inventors: Nikhil Jain, Prabudhya Roy Chowdhury, Kisik Choi, Ruilong Xie
  • Patent number: 11947712
    Abstract: Embodiments are disclosed for a method. The method includes generating a correction datastore indicating shifts in magnitude representing corresponding characters that uniquely identify hardware comprising a computer processing chip. The method further includes generating security masks based on a correction file. Additionally, the method includes using a correction process for the computer processing chip. The generated security masks include corresponding overlays representing the shifts in magnitude with respect to corresponding product masks for the computer processing chip. The method also includes generating the computer processing chip using the security masks and the product masks.
    Type: Grant
    Filed: September 27, 2021
    Date of Patent: April 2, 2024
    Assignee: International Business Machines Corporation
    Inventors: Richard C. Johnson, Alex Richard Hubbard, Vinay Pai, Cody J. Murray, Fee Li Lie, Nikhil Jain
  • Publication number: 20240105554
    Abstract: A semiconductor structure includes a source/drain region; a frontside source/drain contact disposed on the source/drain region, a via-to-backside power rail disposed on the frontside source/drain contact and on a portion of the source/drain region, and a backside power rail connected to the via-to-backside power rail.
    Type: Application
    Filed: September 22, 2022
    Publication date: March 28, 2024
    Inventors: Tao Li, Liqiao Qin, Devika Sarkar Grant, Nikhil Jain, Prabudhya Roy Chowdhury, Sagarika Mukesh, Kisik Choi, Ruilong Xie
  • Publication number: 20240096951
    Abstract: A semiconductor structure is provided that includes a first FET device region including a plurality of first FETs, each first FET of the plurality of first FETs includes a first source/drain region located on each side of a functional gate structure. A second FET device region is stacked above the first FET device region and includes a plurality of second FETs, each second FET of the plurality of second FETs includes a second source/drain region located on each side of a functional gate structure. The structure further includes at least one first front side contact placeholder structure located adjacent to one of the first source/drain regions of at least one the first FETs, and at least one second front side contact placeholder structure located adjacent to at least one of the second source/drain regions of at one of the second FETs.
    Type: Application
    Filed: September 16, 2022
    Publication date: March 21, 2024
    Inventors: Sagarika Mukesh, Tao Li, Prabudhya Roy Chowdhury, Liqiao Qin, Nikhil Jain, Ruilong Xie
  • Publication number: 20240088233
    Abstract: A semiconductor device includes a source/drain having a height, a length, and a width. A full wrap-around contact surrounds a partial length of the source/drain, wherein the full wrap-around contact includes a partial front-side wrap-around contact from a front side of a substrate and a partial back-side wrap-around contact from a back side of the substrate.
    Type: Application
    Filed: September 13, 2022
    Publication date: March 14, 2024
    Inventors: Prabudhya Roy Chowdhury, Nikhil Jain, Kisik Choi, Ruilong Xie
  • Publication number: 20240087939
    Abstract: Described is a semiconductor processing system including a measurement tool configured to measure warpage characteristics in a semiconductor wafer. The semiconductor processing system further includes a pixelated surface configured to retain the semiconductor wafer, where the pixelated surface approximates the warpage characteristics to conform to the semiconductor wafer. The semiconductor processing system further includes a semiconductor processing tool configured to perform processing on the semiconductor wafer while it is retained on the pixelated surface.
    Type: Application
    Filed: September 14, 2022
    Publication date: March 14, 2024
    Inventors: VINAY PAI, Nikhil Jain, Alex Richard Hubbard, Cody J. Murray, Richard C. Johnson
  • Publication number: 20240071801
    Abstract: A printable-component structure includes a carrier substrate, a bonding layer disposed on the carrier substrate, a solid weak-adhesion layer disposed on at least a portion of the bonding layer, at least a portion of a component disposed directly on and in contact with at least a portion of the weak-adhesion layer, and a release layer disposed in contact with at least a portion of the component. The component is adhered to the weak-adhesion layer with a force that is less than the adhesion between the component and a stamp, such as a PDMS stamp. The component can include a protruding post in sole contact with the weak-adhesion layer.
    Type: Application
    Filed: August 29, 2022
    Publication date: February 29, 2024
    Inventors: Christopher Andrew Bower, Matthew Alexander Meitl, Nikhil Jain, Ronald S. Cok
  • Publication number: 20240072146
    Abstract: A semiconductor device includes a first transistor including a first source/drain region, and a second transistor stacked on the first transistor. The second transistor includes a second source/drain region. The semiconductor device further includes a via structure disposed between a power element and the second source/drain region. The via structure includes a first via disposed on the power element, and a second via disposed on the first via, wherein the second via is angled with respect to the first via.
    Type: Application
    Filed: August 26, 2022
    Publication date: February 29, 2024
    Inventors: Liqiao Qin, Nikhil Jain, Prabudhya Roy Chowdhury, Sagarika Mukesh, Tao Li, Kisik Choi, Ruilong Xie
  • Publication number: 20230369218
    Abstract: Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a first top transistor comprising a first source/drain (S/D) region and a first bottom transistor with a second S/D region. The first bottom transistor may be stacked directly below the first transistor. The semiconductor structure may also include a backside power delivery network (BSPDN) below the bottom transistor, a back-end-of-line (BEOL) metal level above the top transistor, and a first interlevel via electrically connecting a top of the first S/D region to the BSPDN.
    Type: Application
    Filed: May 11, 2022
    Publication date: November 16, 2023
    Inventors: Tao Li, Devika Sarkar Grant, Liqiao Qin, Nikhil Jain, Prabudhya Roy Chowdhury, Sagarika Mukesh, Ruilong Xie, Kisik Choi
  • Publication number: 20230369220
    Abstract: According to the embodiment of the present invention, a semiconductor device includes a first source/drain and a second source/drain. A first source/drain contact includes a first portion and a second portion. The first portion of the first source/drain contact is located directly atop the first source/drain. The second portion of the first source/drain contact extends vertically past the first source/drain. The first source/drain is in direct contact with three different sides of a first section of the second portion of the first source/drain contact.
    Type: Application
    Filed: May 11, 2022
    Publication date: November 16, 2023
    Inventors: Sagarika Mukesh, Nikhil Jain, Devika Sarkar Grant, Ruilong Xie, Kisik Choi, Prabudhya Roy Chowdhury
  • Publication number: 20230326312
    Abstract: In some aspects, a server device may obtain information relating to a location of a device that is to be delivered to a physical location associated with a recipient. The server device may transmit, based at least in part on the information indicating that the location of the device is at the physical location of the recipient, a first communication prompting the recipient to indicate whether the recipient is in possession of the device. The server device may receive a second communication indicating whether the recipient is in possession of the device. The server device may transmit a signal to cause a change of an activation state of one or more operations of the device based at least in part on whether the second communication indicates that the recipient is in possession of the device. Numerous other aspects are described.
    Type: Application
    Filed: April 7, 2022
    Publication date: October 12, 2023
    Inventors: Amit MAHAJAN, Nikhil JAIN
  • Patent number: 11775357
    Abstract: Disclosed are various embodiments for generating relevant notifications of content generated by third party data sources. In some embodiments, a system comprises a computing device and machine readable instructions. The computing device includes a processor and a memory. The machine-readable instructions can be stored in the memory that, when executed by the processor, cause the computing device to receive content from a third party data source based at least in part on a keyword topic. An embedding for the content is generated. The system can classify a portion of the content as associated with the keyword topic. Organizations can be identified from the portions of the content. The system can generate a list from the organizations identified in the content and transmit a notification to a client device regarding the content.
    Type: Grant
    Filed: January 20, 2021
    Date of Patent: October 3, 2023
    Assignee: American Express Travel Related Services Company, Inc.
    Inventors: Ravneet Ghuman, Madhu Sudhan Reddy Gudur, Sandeep Bose, Shashank Kapoor, Rahul Panwar, Nikhil Jain, Vinod Yadav
  • Patent number: 11751024
    Abstract: Described are techniques for sharing data among a group of mobile devices that are registered to the same user. In some instances, the shared data is sensor data captured by a mobile device or media content being processed by the mobile device. The mobile devices in the group are configured to wirelessly communicate with each other and to share status information. Using the status information, the mobile devices can keep each other updated as to the operational status of each individual mobile device and, in some aspects, the status of a mobile device with respect to the user. The sensor data or media content can be forwarded to a different mobile device in response to a determination made based on the status information. For instance, forwarding can be based on a rule that specifies one or more conditions relating to the status of a mobile device and/or user status.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: September 5, 2023
    Assignee: QUALCOMM Incorporated
    Inventors: Nikhil Jain, Justin McGloin, Joel Linsky, James Robert Chapman
  • Publication number: 20230268389
    Abstract: Provided is a semiconductor device. The semiconductor device comprises a transistor comprising a plurality of source/drain epitaxies. The semiconductor device further comprises at least one backside power rail under the transistor. The semiconductor device further comprises a backside inter-layer dielectric (ILD) located between the plurality of source/drain epitaxies and the at least one power rail. The semiconductor device further comprises a first backside contact connecting a first source/drain epitaxy to the at least one backside power rail. The semiconductor device further comprises one or more contact placeholders formed under the other source/drain epitaxies.
    Type: Application
    Filed: February 23, 2022
    Publication date: August 24, 2023
    Inventors: Nikhil Jain, Sagarika Mukesh, Devika Sarkar Grant, Prabudhya Roy Chowdhury, Ruilong Xie, Kisik Choi