Abstract: Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

Abstract: Described are techniques for sharing data among a group of mobile devices that are registered to the same user. In some instances, the shared data is sensor data captured by a mobile device or media content being processed by the mobile device. The mobile devices in the group are configured to wirelessly communicate with each other and to share status information. Using the status information, the mobile devices can keep each other updated as to the operational status of each individual mobile device and, in some aspects, the status of a mobile device with respect to the user. The sensor data or media content can be forwarded to a different mobile device in response to a determination made based on the status information. For instance, forwarding can be based on a rule that specifies one or more conditions relating to the status of a mobile device and/or user status.

Abstract: A semiconductor structure and a method for managing semiconductor wafer stress are disclosed. The semiconductor structure includes a semiconductor wafer, a first stress layer disposed on and in contact with a backside of the semiconductor wafer, and a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second layer exerts a second stress on the semiconductor wafer that is opposite the first backside stress. The method includes forming a first stress layer on and in contact with a backside of a semiconductor wafer, and further forming a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second stress layer exerts a second stress on the semiconductor wafer that is opposite to the first stress.

Abstract: A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.

Abstract: A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.

Abstract: A thin film, flexible optoelectronic device is described. In an aspect, a method for fabricating a single junction optoelectronic device includes forming a p-n structure on a substrate, the p-n structure including a semiconductor having a lattice constant that matches a lattice constant of substrate, the semiconductor including a dilute nitride, and the single-junction optoelectronic device including the p-n structure; and separating the single-junction optoelectronic device from the substrate. The dilute nitride includes one or more of GaInNAs, GaInNAsSb, alloys thereof, or derivatives thereof.

Abstract: A foam dispenser includes an air pump for pumping and outputting air, a liquid pump for pumping and outputting liquid soap, a mixing chamber for receiving the liquid soap and the air, and a controller for inversely controlling the outputs of the liquid pump and the air pump. A method of controlling the quality of foam produced by a foam dispenser including a liquid soap pump and an air pump includes simultaneously inversely varying the output of each of the pump for adjusting the quality of the foam produced.

Abstract: A foam dispenser includes an air pump for pumping and outputting air, a liquid pump for pumping and outputting liquid soap, a mixing chamber for receiving the liquid soap and the air, and a controller for inversely controlling the outputs of the liquid pump and the air pump. A method of controlling the quality of foam produced by a foam dispenser including a liquid soap pump and an air pump includes simultaneously inversely varying the output of each of the pump for adjusting the quality of the foam produced.

Abstract: A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.

Abstract: A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.

Abstract: A multi-junction optoelectronic device and method of fabrication are disclosed. In an aspect, the method includes forming a first p-n structure on a substrate, the first p-n structure including a semiconductor having a lattice constant that matches a lattice constant of the substrate; forming one or more additional p-n structures on the first p-n structure, each of the one or more additional p-n structures including a semiconductor having a lattice constant that matches the lattice constant of the substrate, the semiconductor of a last of the one or more additional p-n structures that is formed including a dilute nitride, and the multi-junction optoelectronic device including the first p-n structure and the one or more additional p-n structures; and separating the multi-junction optoelectronic device from the substrate. In some implementations, it is possible to have the dilute nitride followed by a group IV p-n structure.

Abstract: A thin film, flexible optoelectronic device is described. In an aspect, a method for fabricating a single junction optoelectronic device includes forming a p-n structure on a substrate, the p-n structure including a semiconductor having a lattice constant that matches a lattice constant of substrate, the semiconductor including a dilute nitride, and the single-junction optoelectronic device including the p-n structure; and separating the single-junction optoelectronic device from the substrate. The dilute nitride includes one or more of GaInNAs, GaInNAsSb, alloys thereof, or derivatives thereof.

Abstract: A multi junction optoelectronic device and method of fabrication are disclosed. In an aspect, the method includes forming a first p-n structure on a substrate, the first p-n structure including a semiconductor having a lattice constant that matches a lattice constant of the substrate; forming one or more additional p-n structures on the first p-n structure, each of the one or more additional p-n structures including a semiconductor having a lattice constant that matches the lattice constant of the substrate, the semiconductor of a last of the one or more additional p-n structures that is formed including a dilute nitride, and the multi junction optoelectronic device including the first p-n structure and the one or more additional p-n structures; and separating the multi junction optoelectronic device from the substrate. In some implementations, it is possible to have the dilute nitride followed by a group IV p-n structure.

Abstract: Aspects of the disclosure relate to processes for epitaxial growth of III-V compound of (Al)GaInP material at high rates, such as about 8 ?m/hr, 10 ?m/hr, 20 ?m/hr, 30 ?m/hr, 40 ?m/hr, and 8-120 ?m/hr deposition rates. The high growth-rate deposited (Al)InGaP materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a chemical vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium aluminum indium phosphide, gallium indium phosphide, derivatives thereof, alloys thereof, or combinations thereof.

Abstract: Disclosed herein are techniques for reducing power consumption of an electronic tracking device. The electronic tracking device includes a wireless communication subsystem and an always-on low-power sensor for sensing the motions of the electronic tracking device. A controller of the electronic tracking device controls the operations of the wireless communication subsystem based on the detection signals from the always-on low-power sensor such that the wireless communication subsystem is only activated when motions of the electronic tracking device have stopped for a threshold period of time, or when a query from a server is received when the wireless communication subsystem is in a standby mode.

Abstract: The disclosure generally relates to power savings in a power-sensitive device tethered to another device over a wireless link. For example, a first wireless device may establish a wireless link with a second device such that the first wireless device is tethered to the second device over the wireless link. The first wireless device may determine that a scheduled untethering of the wireless link with the second device is impending and reduce a duty cycle associated with one or more procedures to reestablish the wireless link in response to determining that the wireless link with the second device has been lost. The duty cycle may be reduced for a period that substantially corresponds to an expected duration of the scheduled untethering of the wireless link.

Abstract: Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

Abstract: Systems and method are directed to reducing power consumption of a memory based on enabling partial page access. Based on system conditions such as operating frequency, access size for one or more memory access requests are determined. The access size is programmed in a mode register of the memory and one or more commands are issued for accessing the memory based on the programmed access size. Alternatively, the access sizes are specified within the one or more commands issued to the memory for accessing partial pages. Activating only the portion of a page corresponding to the partial page access reduces power consumption.

Abstract: Disclosed herein are techniques for reducing power consumption of an electronic tracking device. The electronic tracking device includes a wireless communication subsystem and an always-on low-power sensor for sensing the motions of the electronic tracking device. A controller of the electronic tracking device controls the operations of the wireless communication subsystem based on the detection signals from the always-on low-power sensor such that the wireless communication subsystem is only activated when motions of the electronic tracking device have stopped for a threshold period of time, or when a query from a server is received when the wireless communication subsystem is in a standby mode.

Abstract: Systems and method are directed to reducing power consumption and/or improving performance of a processing system comprising a processor subsystem and a memory subsystem. A variable length column command is used in place of a plurality of column commands directed to a same page of a memory bank of the memory subsystem. The variable length column command is provided to the memory subsystem based on a detection of a plurality of accesses directed to the same page.