Abstract: In various embodiments, an image sensor and related methods of operation of the image sensor are disclosed. In an embodiment, an image sensor includes at least one pixel. The at least one pixel including a transistor to couple an overflow capacitor to a floating diffusion node. Under a low light condition, photocharge is to be collected in a floating diffusion, but substantially not into an overflow node. Under a high light condition, photocharge is to overflow into the overflow node. Other sensors and related operations are disclosed.

Abstract: In various embodiments, an electronic image sensor having extended dynamic range comprises, for example, a pixel circuit and a column readout circuit. The column readout circuit includes, for example, a correlated double-sampling (CDS) capacitor, one or more CDS clamp switches, a single slope analog-to-digital converter (ADC) circuit, and a column memory. Other devices and methods are disclosed.

Abstract: Generally discussed herein are imaging devices and corresponding circuitry and methods of using and making the same. An image sensor device may include pixel circuitry, the pixel circuitry comprising a photosensitive material layer, circuitry including first, second, and third electrodes and a storage device, the first electrode on a first surface of the photosensitive material layer and the second and third electrodes on a second surface of the photosensitive material layer, the first surface opposite the second surface, electrical interconnect circuitry electrically coupling the second electrode and the storage device, and a dielectric material situated between the third electrode and the photosensitive material layer.

Abstract: In various embodiments, an image sensor and related methods of operation of the image sensor are disclosed. In an embodiment, an image sensor includes at least one pixel. The at least one pixel including a transistor to couple an overflow capacitor to a floating diffusion node. Under a low light condition, photocharge is to be collected in a floating diffusion, but substantially not into an overflow node. Under a high light condition, photocharge is to overflow into the overflow node. Other sensors and related operations are disclosed.

Abstract: In one form, a pixel for use in image sensing comprises a photodetector, a sink device, and a readout circuit. The photodetector is formed in a semiconductor substrate and has a charge collection region for receiving photocharge representative of incident light. The sink device is formed in the semiconductor substrate and adjacent to the charge collection region and has a gate overlying and insulated from the semiconductor substrate and receiving a responsivity control signal. The readout circuit transfers the photocharge collected by the charge collection region of the photodetector to an output in response to a select signal. In another form, the pixel may be used in an image sensor having a pixel array of such pixels.

Abstract: In various embodiments, an electronic image sensor having extended dynamic range comprises, for example, a pixel circuit and a column readout circuit. The column readout circuit includes, for example, a correlated double-sampling (CDS) capacitor, one or more CDS clamp switches, a single slope analog-to-digital converter (ADC) circuit, and a column memory. Other devices and methods are disclosed.

Abstract: An imaging system may include an image sensor having a pixel array. Each pixel in the image array may include a pinned photodiode and an additional photodiode that is configured to operate in photovoltaic mode. The additional photodiode may be operated in photovoltaic mode and may have a logarithmic voltage response to photo-current generated in response to incoming light. The imaging system may mitigate LED flicker by having an extended exposure time for the accurate capture of light sources that oscillate between 80 to 500 Hz. The imaging system may include column readout circuitry that selectively generates an output signal based on voltages corresponding to photo-current generated by either the pinned photodiode or the additional photodiode that are sent to the column readout circuitry during a single exposure and readout period. The selection of the output signal may be dependent on light conditions.

Abstract: In one form, a pixel for use in image sensing comprises a photodetector, a sink device, and a readout circuit. The photodetector is formed in a semiconductor substrate and has a charge collection region for receiving photocharge representative of incident light. The sink device is formed in the semiconductor substrate and adjacent to the charge collection region and has a gate overlying and insulated from the semiconductor substrate and receiving a responsivity control signal. The readout circuit transfers the photocharge collected by the charge collection region of the photodetector to an output in response to a select signal. In another form, the pixel may be used in an image sensor having a pixel array of such pixels.

Abstract: An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a digital floating point equivalent representation. The ADC circuitry may be configured to perform exponent conversion during a first time period at a nominal reference voltage level and to perform mantissa conversion a subsequent time period at an adjustable reference voltage level that can be less than the nominal reference voltage level. Readout circuitry implemented in this way can perform conversion in a shorter period of time using a reduced resolution ADC to serve effectively as a higher resolution ADC.

Abstract: An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a floating point number. The ADC circuitry may be configured to obtain an illumination value during an auto exposure period. The illumination value, which serves as an exponent value, can be stored as tile data in respective shutter tile column memory circuits. A rolling shutter scheme may be implemented to read signals out from the array. Each tile may be allowed to integrate for a different period of time depending on the exponent value stored in the shutter tile column memory circuits. During readout, the signal generated from the ADC circuitry may represent a mantissa value that is combined with the exponent value to yield a floating point number.

Abstract: An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a digital floating point equivalent representation. The ADC circuitry may be configured to obtain an illumination value during an auto exposure period. The illumination value, which serves as an exponent value, can be stored as tile data in a tile column memory circuit. During actual readout, the ADC circuitry may be configured to perform mantissa conversion. During mantissa conversion, the ADC circuitry may use a reference voltage value that is adjusted based on the tile data. A mantissa value that is obtained during the mantissa conversion may then be combined with the exponent value for that tile to yield a final floating number point for that image pixel.

Abstract: An electronic device may have one or more analog-to-digital converters (ADCs). The ADCs may be used in digitizing signals from an image sensor. In order to ensure that input signals received by an ADC are not clipped, the input signals may be positively or negatively offset by a desired amount. Offsetting the input signals may ensure that the offset input signals wall within the acceptable input range of the ADCs. Offset injection may be accomplished using capacitors that are also used for analog-to-digital conversion. As an example, the ADC may be a successive approximation-type ADC that uses capacitors in a binary search for the digital value most accurately representing an input analog value. The capacitors of the ADC may be used for the successive approximation process and for offset injection. The offset injection may be digitally canceled out following digitization of the input analog signal.

Abstract: An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a digital floating point equivalent representation. The ADC circuitry may be configured to obtain an illumination value during an auto exposure period. The illumination value, which serves as an exponent value, can be stored as tile data in a tile column memory circuit. During actual readout, the ADC circuitry may be configured to perform mantissa conversion. During mantissa conversion, the ADC circuitry may use a reference voltage value that is adjusted based on the tile data. A mantissa value that is obtained during the mantissa conversion may then be combined with the exponent value for that tile to yield a final floating number point for that image pixel.

Abstract: An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a floating point number. The ADC circuitry may be configured to obtain an illumination value during an auto exposure period. The illumination value, which serves as an exponent value, can be stored as tile data in respective shutter tile column memory circuits. A rolling shutter scheme may be implemented to read signals out from the array. Each tile may be allowed to integrate for a different period of time depending on the exponent value stored in the shutter tile column memory circuits. During readout, the signal generated from the ADC circuitry may represent a mantissa value that is combined with the exponent value to yield a floating point number.

Abstract: An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a digital floating point equivalent representation. The ADC circuitry may be configured to perform exponent conversion during a first time period at a nominal reference voltage level and to perform mantissa conversion a subsequent time period at an adjustable reference voltage level that can be less than the nominal reference voltage level. Readout circuitry implemented in this way can perform conversion in a shorter period of time using a reduced resolution ADC to serve effectively as a higher resolution ADC.

Abstract: Imaging sensors having dual-port for digital readout to pipeline readout processes of two different groups of pixels.

Abstract: An imager in which two adjacent pixels share row and reset lines and a row selection circuitry while the output transistors of the two pixels are configured as a differential amplifier. In operation, both pixels are reset at the same time, causing differential reset signals to be output from the amplifier. The charge from the first pixel is readout and a differential pixel signal for the first pixel is output from the amplifier. Because the reset and pixel signals are differential signals generated within the pixels, they are free from common-mode noise. Correlated double sampling can be used to obtain the pixel output value, which is also free from common-mode noise, from the differential reset and pixel signals. The second pixel may be readout in the same manner. Because the two pixels are sharing circuitry, the pixels have decreased fill factor and complexity as well.

Abstract: Techniques for use with image sensors include transferring a signal level from an active sensor pixel to a readout circuit, performing a flushed reset of the pixel, and isolating the pixel from the readout circuit during resetting of the pixel.

Abstract: An imager in which two adjacent pixels share row and reset lines and a row selection circuitry while the output transistors of the two pixels are configured as a differential amplifier. In operation, both pixels are reset at the same time, causing differential reset signals to be output from the amplifier. The charge from the first pixel is readout and a differential pixel signal for the first pixel is output from the amplifier. Because the reset and pixel signals are differential signals generated within the pixels, they are free from common-mode noise. Correlated double sampling can be used to obtain the pixel output value, which is also free from common-mode noise, from the differential reset and pixel signals. The second pixel may be readout in the same manner. Because the two pixels are sharing circuitry, the pixels have decreased fill factor and complexity as well.

Abstract: Embodiments provide structures and methods for binning pixel signals of a pixel array. Pixel signals for pixels in an element of the array are binned simultaneously. Pixels in an element are located in a plurality of rows and columns. In exemplary embodiments, pixel voltage signals or pixel current signals are binned.