Abstract: A composition and use thereof. The composition comprises an active component a and an active component b; the active component a is a compound as shown in general formula A; and the active component b is at least one of compounds which have insecticidal, acaricidal or bactericidal activity and are different from the compound as shown in general formula A. The composition has the advantages of synergistic effect and expanding prevention and treatment spectrum, and can be used for preventing and treating various pests, particularly mite damage, and plant diseases caused by various fungi, bacteria, nematodes and viruses.

Abstract: A method for regulating an unmanned aerial vehicle (UAV) includes receiving a UAV identifier and one or more types of contextual information broadcasted by the UAV. The UAV identifier uniquely identifies the UAV from other UAVs. The one or more types of contextual information includes at least geographical information of the UAV. The method further includes authenticating, via an authentication device, an identity of the UAV based on the UAV identifier to determine whether the UAV is authorized for operation, and transmitting a signal to a remote device in response to determining whether the UAV is authorized for operation.

Abstract: A short-travel nanoscale motion stage and a method for measuring thermally-related hysteresis data are provided. A stator unit of a left two-pole electromagnet and stator units of two inchworm motors are fixed on a right side surface of a left foundation frame, and an active unit of the left two-pole electromagnet and actives of the two inchworm motors are fixed on a left side surface of a stage moving component. An active unit of a right two-pole electromagnet is fixed on a right side surface of the stage moving component, while a stator unit of the right two-pole electromagnet is fixed on a left side surface of a right foundation frame. The stage moving component is fixedly mounted on a guide sleeve of an aerostatic guideway. Each of the stator units of the left and right two-pole electromagnets has an eddy current sensor and a hall sensor fixed therein.

Abstract: A super-lubricity water lubricating additive, a super-lubricity water lubricant, a preparation method and application, wherein the additive is of a hollow spherical shell structure which includes at least one layer of spherical shell; the spherical shell sequentially includes a first polydopamine layer, a nanoparticle layer, a second polydopamine layer and an oxidized graphene layer from inside to outside, or a first polydopamine layer, a nanoparticle layer, a second polydopamine layer, a graphene layer and a third polydopamine layer from inside to outside; and nanoparticles of the nanoparticle layer are nano diamond, nano molybdenum disulfide or nano tungsten disulfide. The additive is prepared into a uniform aqueous solution to obtain the super-lubricity water lubricant. The additive can be easily adsorbed on a dual surface, and the nanoparticles released in a friction process cooperate with spherical oxidized graphene or graphene to form rolling friction so as to reduce frictional abrasion.

Abstract: A super-lubricity water lubricating additive, a super-lubricity water lubricant, a preparation method and application, wherein the additive is of a hollow spherical shell structure which includes at least one layer of spherical shell; the spherical shell sequentially includes a first polydopamine layer, a nanoparticle layer, a second polydopamine layer and an oxidized graphene layer from inside to outside, or a first polydopamine layer, a nanoparticle layer, a second polydopamine layer, a graphene layer and a third polydopamine layer from inside to outside; and nanoparticles of the nanoparticle layer are nano diamond, nano molybdenum disulfide or nano tungsten disulfide. The additive is prepared into a uniform aqueous solution to obtain the super-lubricity water lubricant. The additive can be easily adsorbed on a dual surface, and the nanoparticles released in a friction process cooperate with spherical oxidized graphene or graphene to form rolling friction so as to reduce frictional abrasion.

Abstract: A short-travel nanoscale motion stage and a method for measuring thermally-related hysteresis data are provided. A stator unit of a left two-pole electromagnet and stator units of two inchworm motors are fixed on a right side surface of a left foundation frame, and an active unit of the left two-pole electromagnet and actives of the two inchworm motors are fixed on a left side surface of a stage moving component. An active unit of a right two-pole electromagnet is fixed on a right side surface of the stage moving component, while a stator unit of the right two-pole electromagnet is fixed on a left side surface of a right foundation frame. The stage moving component is fixedly mounted on a guide sleeve of an aerostatic guideway. Each of the stator units of the left and right two-pole electromagnets has an eddy current sensor and a hall sensor fixed therein.

Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, a display panel, and a display device. The display substrate includes: a substrate; and a thin film transistor, provided on a first surface of the substrate and including an electrode and an insulating layer, the insulating layer covering the electrode, wherein a groove is formed on a surface of the insulating layer away from the electrode, and an orthogonal projection of a bottom wall of the groove on the substrate overlaps with an orthogonal projection of the electrode on the substrate. In the display substrate provided by the present disclosure, a surface of the insulating layer covering the electrode away from the substrate is planarized, so that the subsequently formed layer structures may have better flatness, and problems of faulting, fracturing and so on likely occurring when the display substrate is bent may be solved.

Abstract: An electronic device includes a display screen, a processor, and a memory. The processor detects a sliding touch gesture on the display screen, confirms a corresponding command of the sliding touch gesture according to a start point, an end point, and a sliding distance “S” of the sliding touch gesture, and executes a function of the corresponding command.

Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, a display panel, and a display device. The display substrate includes: a substrate; and a thin film transistor, provided on a first surface of the substrate and including an electrode and an insulating layer, the insulating layer covering the electrode, wherein a groove is formed on a surface of the insulating layer away from the electrode, and an orthogonal projection of a bottom wall of the groove on the substrate overlaps with an orthogonal projection of the electrode on the substrate. In the display substrate provided by the present disclosure, a surface of the insulating layer covering the electrode away from the substrate is planarized, so that the subsequently formed layer structures may have better flatness, and problems of faulting, fracturing and so on likely occurring when the display substrate is bent may be solved.

Abstract: Disclosed are benzoisothiazole compounds and a use in the preparation of anti-schizophrenia drugs. The benzoisothiazole compounds of the present invention not only have strong affinity for dopamine D3 receptor, 5-HT1A receptor and 5-HT2A receptor, but also can observably improve the symptoms of schizophrenia relevant to apomorphine model and MK-801 model mice, with oral absorption being good, safety being high and side-effect being less, and having developmental value as new anti-neurotic disease drugs. The present invention is the compounds having a structure of general formula (I), or geometric isomers, free alkalies, salts, hydrates or solvates thereof.

Abstract: Disclosed are benzoisothiazole compounds and a use in the preparation of anti-schizophrenia drugs. The benzoisothiazole compounds of the present invention not only have strong affinity for dopamine D3 receptor, 5-HT1A receptor and 5-HT2A receptor, but also can observably improve the symptoms of schizophrenia relevant to apomorphine model and MK-801 model mice, with oral absorption being good, safety being high and side-effect being less, and having developmental value as new anti-neurotic disease drugs. The present invention is the compounds having a structure of general formula (I), or geometric isomers, free alkalies, salts, hydrates or solvates thereof.

Abstract: A tunneling field effect transistor and a method for fabricating the same are provided. The tunneling field effect transistor comprises: a semiconductor substrate; a channel region formed in the semiconductor substrate, with one or more isolation structures formed in the channel region; a first buried layer and a second buried layer formed in the semiconductor substrate and located at both sides of the channel region respectively, the first buried layer being first type non-heavily-doped, and the second buried layer being second type non-heavily-doped; a source region and a drain region formed in the semiconductor substrate and located on the first buried layer and the second buried layer respectively; and a gate dielectric layer formed on the one or more isolation structures, and a gate formed on the gate dielectric layer.

Abstract: The present disclosure provides a TFET, which comprises: a substrate; a channel region formed in the substrate, and a source region and a drain region formed on two sides of the channel region; a gate stack formed on the channel region, wherein the gate stack comprises: a gate dielectric layer, and at least a first gate electrode and a second gate electrode distributed in a direction from the source region to the drain region and formed on the gate dielectric layer, and the first gate electrode and the second gate electrode have different work functions; and a first side wall and a second side wall formed on a side of the first gate electrode and on a side of the second gate electrode respectively.

Abstract: A tunneling field effect transistor structure and a method for forming the same are provided. The tunneling field effect transistor structure comprises: a substrate; a plurality of convex structures formed on the substrate, every two adjacent convex structures being separated by a predetermined cavity less than 30 nm in width, the convex structures comprising a plurality of sets, and each set comprising more than two convex structures; a plurality of floated films formed on tops of the convex structures, each floated film corresponding to one set of convex structures, a region of each floated film corresponding to a top of an intermediate convex structure in each set being formed as a channel region, and regions of the each floated film at both sides of the channel region are formed as a source region and a drain region with opposite conductivity types respectively; and a gate stack formed on each channel region.

Abstract: The present disclosure provides a tunneling device, which comprises: a substrate; a channel region formed in the substrate, and a source region and a drain region formed on two sides of the channel region; and a gate stack formed on the channel region and a first side wall and a second side wall formed on two sides of the gate stack, wherein the gate stack comprises: a first gate dielectric layer; at least a first gate electrode and a second gate electrode formed on the first gate dielectric layer; a second gate dielectric layer formed between the first gate electrode and the first side wall; and a third gate dielectric layer formed between the second gate electrode and the second side wall.

Abstract: A tunneling field effect transistor and a method for fabricating the same are provided. The tunneling field effect transistor includes: a semiconductor substrate and a drain layer formed in the semiconductor substrate, in which the drain layer is first type heavily doped; an epitaxial layer formed on the drain layer, with an isolation region formed in the epitaxial layer; a buried layer formed in the epitaxial layer, in which the buried layer is second type lightly doped; a source formed in the buried layer, in which the source is second type heavily doped; a gate dielectric layer formed on the epitaxial layer, and a gate formed on the gate dielectric layer; and a source metal contact layer formed on the source, and a drain metal contact layer formed under the drain layer.

Abstract: A flash memory and a method for fabricating the same are provided. The flash memory comprises: a semiconductor substrate; a storage medium layer formed on the semiconductor substrate and comprising from bottom to top: a tunneling oxide layer, a silicon nitride layer and a blocking oxide layer; a semiconductor layer formed on the storage medium layer and comprising a channel region and a source region and a drain region located on both sides of the channel region respectively; and a gate stack formed on the channel region and comprising a gate dielectric and a gate formed on the gate dielectric.

Abstract: A flash memory and a method for fabricating the same are provided. The flash memory comprises: a semiconductor substrate; a storage medium layer formed on the semiconductor substrate and comprising from bottom to top: a tunneling oxide layer, a silicon nitride layer and a blocking oxide layer; a semiconductor layer formed on the storage medium layer and comprising a channel region and a source region and a drain region located on both sides of the channel region respectively; and a gate stack formed on the channel region and comprising a gate dielectric and a gateformed on the gate dielectric.

Abstract: A tunneling field effect transistor and a method for fabricating the same are provided. The tunneling field effect transistor comprises: a semiconductor substrate; a channel region formed in the semiconductor substrate, with one or more isolation structures formed in the channel region; a first buried layer and a second buried layer formed in the semiconductor substrate and located at both sides of the channel region respectively, the first buried layer being first type non-heavily-doped, and the second buried layer being second type non-heavily-doped; a source region and a drain region formed in the semiconductor substrate and located on the first buried layer and the second buried layer respectively; and a gate dielectric layer formed on the one or more isolation structures, and a gate formed on the gate dielectric layer.

Abstract: A tunneling field effect transistor and a method for fabricating the same are provided. The tunneling field effect transistor comprises: a semiconductor substrate and a drain layer formed in the semiconductor substrate, in which the drain layer is first type heavily doped; an epitaxial layer formed on the drain layer, with an isolation region formed in the epitaxial layer; a buried layer formed in the epitaxial layer, in which the buried layer is second type lightly doped; a source formed in the buried layer, in which the source is second type heavily doped; a gate dielectric layer formed on the epitaxial layer, and a gate formed on the gate dielectric layer; and a source metal contact layer formed on the source, and a drain metal contact layer formed under the drain layer.