Abstract: A tunneling field effect transistor structure and a method for forming the same are provided. The tunneling field effect transistor structure comprises: a substrate; a plurality of convex structures formed on the substrate, every two adjacent convex structures being separated by a predetermined cavity less than 30 nm in width, the convex structures comprising a plurality of sets, and each set comprising more than two convex structures; a plurality of floated films formed on tops of the convex structures, each floated film corresponding to one set of convex structures, a region of each floated film corresponding to a top of an intermediate convex structure in each set being formed as a channel region, and regions of the each floated film at both sides of the channel region are formed as a source region and a drain region with opposite conductivity types respectively; and a gate stack formed on each channel region.

Abstract: The present disclosure provides a TFET, which comprises: a substrate; a channel region formed in the substrate, and a source region and a drain region formed on two sides of the channel region; a gate stack formed on the channel region, wherein the gate stack comprises: a gate dielectric layer, and at least a first gate electrode and a second gate electrode distributed in a direction from the source region to the drain region and formed on the gate dielectric layer, and the first gate electrode and the second gate electrode have different work functions; and a first side wall and a second side wall formed on a side of the first gate electrode and on a side of the second gate electrode respectively.

Abstract: The present disclosure provides a tunneling device, which comprises: a substrate; a channel region formed in the substrate, and a source region and a drain region formed on two sides of the channel region; and a gate stack formed on the channel region and a first side wall and a second side wall formed on two sides of the gate stack, wherein the gate stack comprises: a first gate dielectric layer; at least a first gate electrode and a second gate electrode formed on the first gate dielectric layer; a second gate dielectric layer formed between the first gate electrode and the first side wall; and a third gate dielectric layer formed between the second gate electrode and the second side wall.

Abstract: A low volume collector assembly and an electrochemical cell employing a collector assembly are provided. The electrochemical cell includes an electrically conductive can having inner and outer electrodes disposed therein. The cell also includes a collector assembly assembled to an open end of the can to provide closure to the open end of the can. The collector assembly includes a seal and a cover assembled to the seal to provide a sealed closure to the open end of the can. The cover includes an integrally formed current collector portion that contacts one end of the inner electrode. The cover serves as a current collector and also serves as a contact terminal of the cell.

Abstract: A cylindrical alkaline electrochemical cell is disclosed that includes a gel free anode. The anode includes a free flowing zinc powder with a preassembly tap density between 1.6 g/cc and 2.9 g/cc. In one embodiment, zinc powder with the desired tap density may be obtained by mixing zinc agglomerates with zinc flakes.

Abstract: A low volume collector assembly and an electrochemical cell employing a collector assembly are provided. The electrochemical cell includes an electrically conductive can having inner and outer electrodes disposed therein. The cell also includes a collector assembly assembled to an open end of the can to provide closure to the open end of the can. The collector assembly includes a seal and a cover assembled to the seal to provide a sealed closure to the open end of the can. The cover includes an integrally formed current collector portion that contacts one end of the inner electrode. The cover serves as a current collector and also serves as a contact terminal of the cell.

Abstract: Electrochemical cells, and particularly a current collector assembly for a cell that forms an electrically conductive path between a cell electrode and a terminal of the cell, are described, along with a method for manufacturing the same. The current collector includes a non-conductive core and a conductive outer surface layer disposed on the core and shaped as en elongated rod. A seal hub gasket for sealing the open end of a cell container and for venting gasses when exposed to excessive pressure is also described. The current collector includes a first diameter portion and a reduced second diameter portion, wherein the first diameter portion engages the seal in a non-vented state and during high pressure venting the seal moves relative to the current collector toward the second reduced diameter portion to allow venting of high pressure gases.

Abstract: Electrochemical cells, and particularly a current collector assembly for a cell that forms an electrically conductive path between a cell electrode and a terminal of the cell, are described, along with a method for manufacturing the same. The current collector includes a non-conductive core and a conductive outer surface layer disposed on the core and shaped as en elongated rod. A seal hub gasket for sealing the open end of a cell container and for venting gasses when exposed to excessive pressure is also described. The method of manufacturing a cell includes the deposition of a non-carbonaceous conductive material on a non-conductive core, with the resulting current collector being inserted into a cell to maintain electrical connection between the electrode and the container/contact terminal.

Abstract: A cylindrical alkaline electrochemical cell is disclosed that includes a gel free anode. The anode includes a free flowing zinc powder with a preassembly tap density between 1.6 g/cc and 2.9 g/cc. In one embodiment, zinc powder with the desired tap density may be obtained by mixing zinc agglomerates with zinc flakes.