Abstract: Crossbar arrays with reduced disturbance and methods for programming the same are disclosed. In some implementations, an apparatus comprises: a plurality of rows; a plurality of first columns; a plurality of second columns; a plurality of devices. Each of the plurality of devices is connected among one of the plurality of rows, one of the plurality of first columns, and one of the plurality of second columns. The device further comprises a shared end on the plurality of first columns or the plurality of the second columns connecting to the plurality of the devices in the same row or column; the shared end is grounding or holds a stable voltage potential. In some implementations, one of the devices is: a RRAM, a floating date, a phase change device, an SRAM, a memristor, or a device with tunable resistance. In some implementations the stable voltage potential is a constant DC voltage.

Abstract: The present disclosure provides resistive random-access memory (RRAM) devices and methods for making the same. An RRAM device may include a first electrode, a second electrode including a conductive material, and a switching oxide layer fabricated between the first electrode and the second electrode. The switching oxide layer includes a base oxide and a dopant oxide that is more chemically stable than the base oxide. The first electrode includes a non-reactive material that is not reactive to the base oxide or the dopant oxide. In some embodiments, the base oxide is Ta2O5, and the dopant oxide is Al2O3, SiO2, ZrO2, Sc2O3, or Y2O3.

Abstract: A scanner redirection method for a remote desktop computer system that includes a client computer, a first virtual machine (VM), and a second VM, wherein the client computer communicates with the first VM via a first remote desktop session, and the first VM communicates with the second VM via a second remote desktop session, includes the steps of: receiving by the first VM from the second VM, a request for an image and an identifier (ID) of an image capturing device connected to the client computer; forwarding by the first VM to the client computer, the request for the image and the ID of the image capturing device; and upon receiving the image from the client computer, transmitting by the first VM to the second VM, the image received from the client computer.

Abstract: A scanner redirection method for a remote desktop computer system, wherein the remote desktop computer system includes a client computer and a remote computer, includes the steps of: transmitting at least one request to the client computer to acquire one or more first images from an image capturing device connected to the client computer; upon receiving a compressed video file that was created by the client computer in response to the at least one request and that was then transmitted by the client computer, applying a video decoding algorithm to expand the compressed video file into a decompressed video file having one or more second images; and providing each of the one or more second images to an application running in the remote computer.

Abstract: The present disclosure provides resistive random-access memory (RRAM) devices and methods for making the same. An RRAM device may include a first electrode, a second electrode comprising ruthenium, and a switching oxide layer fabricated between the first electrode and the second electrode. The first electrode includes at least one of palladium, titanium nitride, or tantalum nitride. The switching oxide layer comprises at least one transition metal oxide. In some embodiments, the RRAM device further includes an interface layer positioned between the switching oxide layer and the second electrode and/or an interface layer positioned between the first electrode and the switching oxide layer.

Abstract: The present disclosure relates to an electronic device, a method, and a storage medium for a wireless communication system. Various embodiments for setting guard periods for downlink-to-uplink switching are described. An embodiment relates to an electronic device for a base station used in a TDD communication system, and the electronic device comprises a processing circuit. The processing circuit is configured to: set a first guard period for downlink-to-uplink switching for a first terminal device in a first cell; and set a second guard period for downlink-to-uplink switching for a second terminal device in the first cell, wherein the second guard period for downlink-to-uplink switching is different from the first guard period for downlink-to-uplink switching.

Abstract: A scanner redirection method for a remote desktop system includes the steps of: transmitting to a client computer, a request to acquire a first image from an image capturing device connected to the client computer; in response to receiving image data from the client computer of a first chunk of the first image and an identifier (ID) of the first chunk, storing the image data of the first chunk and the ID of the first chunk in association with each other; in response to receiving an ID from the client computer of a second chunk of the first image without any associated image data, retrieving image data that is stored in association with the ID of the second chunk; and creating the first image using the image data of the first chunk and the retrieved image data that is stored in association with the ID of the second chunk.

Abstract: Surface pressure measurements on rotating models are important for flow phenomenon identification, understanding flow mechanisms and model aerodynamic design. The disclosure discloses a periodic pressure field measurement system based on the superposed lifetime of pressure sensitive paint, including pressure sensitive paint, a pulse light source, a camera, a synchronizer and a computer. A lifetime superposition method is disclosed in the disclosure for measuring periodic pressure fields of pressure sensitive paint.

Abstract: A method for forming a crossbar circuit is provided. The method may include forming a Resistive Random-Access Memory (RRAM) stack on a first line electrode and a substrate, forming an isolation layer on the first line electrode and the RRAM stack, etching the isolation layer to expose a top surface of the RRAM stack, and forming a selector stack on the top surface of the RRAM stack, a sidewall of the isolation layer, and an upper surface of the isolation layer. The method may further include forming a second line electrode on the selector stack.

Abstract: A scanner redirection method for a remote desktop computer system, wherein the remote desktop computer system includes a plurality of client computers and a remote computer, and wherein the remote computer concurrently has a first remote desktop session with a first client computer and a second remote desktop session with a second client computer, the scanner redirection method comprising: creating a first list of image capturing devices that are connected to the first client computer; creating a second list of image capturing devices that are connected to the second client computer; in response to receiving from the first client computer a selection of a first image capturing device from the first list, transmitting to the first client computer, an identifier (ID) of the first image capturing device; and after transmitting the ID, receiving from the first client computer, an image created by the first image capturing device.

Abstract: The present disclosure provides for a semiconductor device with integrated sensing and processing functionalities. The semiconductor device includes a sensing module configured to generate a plurality of analog sensing signals; and a machine learning (ML) processor. The sensing module and the ML processor are fabricated on a single wafer. The ML processor includes crossbar arrays that processes the analog sensing signals to generate analog preprocessed sensing data; an analog-to-digital converter (ADC) to convert the analog preprocessed sensing data into digital preprocessed sensing data; and a machine learning processing unit to process the digital preprocessed sensing data utilizing one or more machine learning model.

Abstract: Systems and methods for mitigating defects in a crossbar-based computing environment are disclosed. In some implementations, an apparatus comprises: a plurality of row wires; a plurality of column wires connecting between the plurality of row wires; a plurality of non-linear devices formed in each of a plurality of column wires configured to receive an input signal, wherein at least one of the non-linear devices has a characteristic of activation function and at least one of the non-linear devices has a characteristic of neuronal function.

Abstract: The present disclosure provides for crossbar circuits with minimized write disturbance. A crossbar circuit may include a plurality of bit lines intersecting with a plurality of word lines, a plurality of cross-point devices, and one or more first capacitors operatively connected to the plurality of bit lines. Each of the plurality of cross-point devices is connected to at least one of the plurality of word lines and at least one of the plurality of bit lines. The crossbar circuit may further include one or more second capacitors operatively connected to the plurality of word lines. The crossbar circuit may further include a plurality of select lines and/or one or more third capacitors operatively connected to the select lines.

Abstract: The present disclosure relates to resistive random-access memory (RRAM) devices. In some embodiments, a RRAM device may include a first electrode; a second electrode comprising an alloy containing tantalum; and a switching oxide layer positioned between the first electrode and the second electrode, wherein the switching oxide layer includes at least one transition metal oxide. The alloy containing tantalum may further contain at least one of hafnium, molybdenum, tungsten, niobium, or zirconium. In some embodiments, the alloy containing tantalum may include one or more of a binary alloy containing tantalum, a ternary alloy containing tantalum, a quaternary alloy containing tantalum, a quinary alloy containing tantalum, a senary alloy containing tantalum, and a high order alloy containing tantalum.

Abstract: A scanner redirection method for a remote desktop computer system that includes a client computer and a remote virtual machine (VM), includes the steps of: setting a virtual data source of the remote VM to use one of a plurality of transfer modes selected by a user of an application executing on the remote VM, wherein each of the transfer modes specifies how images are to be provided to the application; transmitting a request to the client computer to acquire an image, wherein the client computer acquires the image from an image capturing device connected to the client computer and then transmits the image to the remote VM; and upon receiving the image from the client computer, providing, by the virtual data source to the application, the image according to the selected transfer mode setting of the virtual data source.

Abstract: The present disclosure provides for transimpedance amplifiers for crossbar circuits. A crossbar circuit may include a plurality of bit lines intersecting with a plurality of word lines and a plurality of cross-point devices. Each of the plurality of the cross-point devices is connected to at least one of the word lines and at least one of the bit lines. The crossbar circuit may further include a transimpedance amplifier to generate an output voltage representative of a sum of currents flowing through a first bit line of the plurality of bit line. The transimpedance amplifier may include an operational amplifier, a current mirror circuit connected to an output of the operational amplifier, and one or more resistors connected to the current mirror circuit and a supply voltage.

Abstract: The present disclosure provides mechanisms for reducing and suppressing random telegraph noise (RTN) for a crossbar circuit. A processing device may perform a programming process to program the conductance of a resistive random-access memory (RRAM) device in the crossbar circuit to a target conductance value. The processing device may then determine whether a random telegraph noise (RTN) value associated with the RRAM device is within a predetermined range of acceptable RTN values. If the RTN value associated with the RRAM device is not within a predetermined range of acceptable RTN values, one or more noise-reduction voltages may be applied to the RRAM device until the RTN value associated with the RRAM device is within the predetermined range of acceptable RTN values.

Abstract: The present disclosure relates to resistive random-access memory (RRAM) devices. In some embodiments, a RRAM device may include a first electrode, a second electrode, and a switching oxide layer positioned between the first electrode and the second electrode, wherein the switching oxide layer comprises at least one transition metal oxide. The second electrode may include a first layer comprising a first metallic material and a second layer comprising a second metallic material. In some embodiments, the first metallic material and the second metallic material may include titanium and tantalum, respectively. In some embodiments, the second electrode may include an alloy of tantalum. The alloy of tantalum may contain one or more of hafnium, molybdenum, niobium, tungsten, and/or zirconium. In some embodiments, the alloy of tantalum contains a plurality of alloys of tantalum.

Abstract: The present disclosure provides an apparatus, including: a substrate; a bottom electrode formed on the substrate; a first base oxide layer formed on the bottom electrode; a first geometric confining layer formed on the first base oxide layer, wherein the first geometric confining layer comprises a first plurality of pin-holes; a second base oxide layer formed on the first geometric confining layer and connected to a first top surface of the first base oxide layer via the first plurality of pin-holes; and a top electrode formed on the second base oxide layer. The first base oxide layer includes TaOx, HfOx, TiOx, ZrOx, or a combination thereof. The first geometric confining layer comprises Al2O3, SiO2, Si3N4, Y2O3, Gd2O3, Sm2O3, CeO2, Er2O3, or a combination thereof.

Abstract: Provided are 3D One-Transistor-N-RRAM (1TNR) structures and One-Selector-One-RRAM (1S1R) structures and methods for manufacturing the same. An example 3D 1TNR structure comprises: a plurality of gate lines; and a plurality of crossbar arrays (e.g., a first crossbar array and a second crossbar array). The first and second crossbar arrays are positioned on a first vertical plane and a second vertical plane, respectively. Each crossbar array in the plurality of crossbar arrays includes a first plurality of bit lines and a second plurality of word lines; Each word line in the second plurality of word lines is connected to a source and a destination of a second transistor; and each gate line in the plurality of gate lines is connected to a gate of a first transistor located in the first crossbar array and a gate of a second transistor located in the second crossbar array.