Abstract: In certain aspects, a memory device includes an array of memory cells, and a plurality of peripheral circuits coupled to the array of memory cells and configured to control the array of memory cells. A first peripheral circuit of the plurality of peripheral circuits includes a first three-dimensional (3D) transistor. The first 3D transistor includes a 3D semiconductor body, and a gate structure in contact with a plurality of sides of the 3D semiconductor body. The gate structure includes a gate dielectric and a gate electrode. The gate electrode includes a metal. The gate dielectric has a thickness between 1.8 nm and 10 nm.

Abstract: The embodiment of the present application provides an information processing method, a device, a computer device, and a storage medium. The embodiment of the present application obtains a target video, each frame of the target video including a face image corresponding to a same object; inputting the face image of each frame into a first target preset backbone model, and outputting a first target image feature; inputting the first target image feature into a first target preset network model, and correspondingly outputting a first target expression coefficients. By decoupling the first target expression coefficient from non-expression coefficient, an accuracy of the expression coefficient that is extracted is greatly improved.

Abstract: An information processing method is provided. The method includes obtaining a target video. A first target image feature corresponding to a face image of each frame is obtained. A target identity coefficient and a target texture coefficient corresponding to the target image feature in the face image of a different frame in the target video are obtained. A first target identity feature is obtained according to the target identity coefficient, and a first target texture feature is obtained according to the target texture coefficient. Once a first target feature is obtained by splicing the target image feature, the first target identity feature and the first target texture feature, a first target expression coefficient is obtained based on the first target feature.

Abstract: A semiconductor device and a corresponding fabricating method are provided. The semiconductor device includes a substrate and an active area in the substrate. The semiconductor device further includes at least one isolation structure positioned between two adjacent transistors. Each isolation structure includes a conductive core, and a dielectric layer surrounding the conductive core and positioned between the conductive core and an adjacent transistor.

Abstract: Disclosed is a high-intensity magnetic tool extension rod. The high-intensity magnetic tool extension rod comprises an extension rod, magnets and magnetic conduction structures. The magnets are symmetrically distributed on a lateral part of the extension rod with an axis center of the extension rod as a center. The magnetic conduction structures are arranged on an axial side of the magnet. The magnetic conduction structures comprise a front magnetic conduction structure and a rear magnetic conduction structure which are respectively arranged on both sides of the magnet. The front magnetic conduction structure is arranged at an adapted tool head connecting end of the extension rod, and the rear magnetic conduction structure is arranged at a receiving tool-driven connecting end of the extension rod.

Abstract: Genetically engineered immune cells (e.g., T cells or NK cells) expressing anti-BCMA, anti-TACI, or anti-BCMA/anti-TACI chimeric antigen receptors and uses thereof in cancer therapy. In some embodiments, the genetically engineered immune cells may be armored CAR-T or CAR-NK cells, which further express an armor polypeptide for enhancing CAR-T or CAR-NK cell features.

Abstract: Embodiments of this application provide a method for annotating video data performed by a computer device. The method includes: displaying target video data in a video application; displaying annotated media data in the video application in response to a trigger operation performed on a progress time point annotation function in the video application, the annotated media data being media data associated with a current progress time point, the current progress time point being a progress time point corresponding to the trigger operation to which the target video data is played; and sharing the annotated media data with another user in response to a confirmation operation performed on the annotated media data, the annotated media data enabling the second user to perform a progress jump on the target video data based on the current progress time point. Through this application, efficiency of video progress positioning can be improved.

Abstract: The invention provides an integrated intelligent welding platform and a welding method. The welding platform includes a stretching unit, a welding unit, and a control unit. The stretching unit includes a flatness monitoring component and a stretching component. The stretching component is configured to receive a stretching control signal and apply a stretching force to a flexible electronic skin. The welding unit includes a welding monitoring component and a lifting component. The welding monitoring component is configured to obtain welding information, and the lifting component is configured to receive a welding control signal and apply a compression force to the flexible electronic skin. The control unit includes a first and second control components. The first control component is configured to receive the flatness information and transmit the stretching control signal. The second control component is configured to receive the welding information and transmit the welding control signal.

Abstract: A series of 1H-pyrrolo[2,3-c]pyridine compounds and an application thereof are provided. The compounds include those represented by formula (P) and a pharmaceutically acceptable salt thereof.

Abstract: Provided herein are methods compositions and methods to generate pMHC libraries, and methods of using the pMHC libraries to determine the sequences of T cell receptors, and T cell developmental and activation status.

Abstract: A twist drill with long life and easy cutting, is provided with a vertical discharge chute on a major cutting edge. The cutting part of the twist drill comprises a major cutting edge, a side cutting edge, discharge chutes and a back chute ridge, the left side of the major cutting edge is provided with the side cutting edge, the discharge chutes comprise a vertical discharge chute and a horizontal discharge chute, the vertical discharge chute is arranged on the major cutting edge, the horizontal discharge chute is arranged on the side cutting edge, the horizontal discharge chute and the vertical discharge chute are interconnected, the fluting angle of the vertical discharge chute is perpendicular to the edge of the back chute ridge, and a horizontal discharge chute is added on the side of the major cutting edge, which is originally provided with a discharge chute at the drill tip.

Abstract: Disclosed are pyrrolotriazine compounds which act as a mitogen-activated protein kinase interacting kinase (MNK) inhibitor, and the use thereof in the preparation of a mitogen-activated protein kinase interacting kinase inhibitor drug. Specifically disclosed are compounds represented by formula (I) or a pharmaceutically acceptable salt thereof.

Abstract: An engineered bacterium based on Bacillus subtilis is provided, a genome of the engineered bacterium includes a multi-enzyme element, and the multi-enzyme element comprises a class I ?-agarase element (E1 element), a class II ?-agarase element (E2 element), and an ?-neoagaro-diohydrolase element (E3 element). The engineered bacterium integrates agarase genes into the Bacillus subtilis genome, achieving cascade catalysis of agarose to produce active oligosaccharides and monosaccharides, thereby utilizing the biological activity of these active oligosaccharides and monosaccharides to treat intestinal inflammation. An engineered biofilm based on Bacillus subtilis is also provided, which includes the engineered bacterium and its secretions. Furthermore, a living material for multi-enzyme display and treatment of intestinal inflammation in mice is also provided, which includes the engineered bacterium or the engineered biofilm.

Abstract: The instant disclosure provides proteins with antibody heavy chain variable domains and light chain variable domains that can be paired to form antigen-binding sites that specifically bind to PD-L1. In certain embodiments, the proteins or antigen-binding sites form antibody or bispecific antibody, such as, for example, PD-L1/IL-2R? bispecific antibody. Also provided are pharmaceutical compositions comprising such proteins, therapeutic methods for using such proteins, and pharmaceutical compositions thereof, including for the treatment of cancer.

Abstract: A tool bit connection shaft structure for an electric screwdriver and an electric screwdriver is provided, which includes a power output shaft front section and a shaft end sleeve in cooperation with the power output shaft front section. A magnet and a bit connecting hole are provided in the shaft end sleeve. The power output shaft front section, the magnet, and the bit connecting hole are sequentially arranged in an axial direction of the shaft end sleeve. The shaft end sleeve is made of a non-magnetically conductive material. The power output shaft front section is made of a magnetically conductive material, and an end surface of the power output shaft front section and the magnet are in contact with each other.

Abstract: Provided herein are engineered IL2 polypeptides IL2R? reduced-binding agonists and fusion proteins thereof. Also provided are methods of modulating an immune response by administering an engineered IL2 polypeptide reduced-binding agonist or a fusion protein thereof.

Abstract: A platform of drug delivery based on self-lysis of ECN, a constructing method, and use of the platform are provided. The platform of drug delivery comprises ECN, a Pvhb-GST-PhiX174E circuit genetically introduced into ECN, and a drug encapsulation material. When the platform is used as an anti-cancer drug carrier, the platform delivers a high concentration of chemotherapeutic drugs to a tumor site. Additionally, through the Pvhb-GST-PhiX174E circuit, ECN is induced to lyse in response to tumor microenvironment signals, leading to cell death in the tumor region and enhancing ECN's biosafety in vivo. Furthermore, ECN within the platform of drug delivery based on self-lysis of ECN serves as an immune adjuvant, stimulates the immune cell activity in the tumor site, triggers acute inflammation, and strengthens the anti-tumor effect, thereby achieving multi-modal anti-tumor therapy through live-cell, chemotherapy, and immunotherapy.

Abstract: A memory device include a bit line extending in a first direction, a first transistor comprising a first semiconductor body extending in a second direction perpendicular to the first direction and a first gate structure located at one side of the first semiconductor body in the first direction, the first semiconductor body coupled to the bit line, a second transistor comprising a second semiconductor body extending in the second direction and a second gate structure located at one side of the second semiconductor body in the first direction, the second semiconductor body coupled to the bit line; and a first isolation structure located between the first semiconductor body and the second semiconductor body in the first direction.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a peripheral circuit. The second semiconductor structure includes an array of memory cells and a plurality of bit lines coupled to the memory cells and each extending in a second direction perpendicular to the first direction. Each of the memory cells includes a vertical transistor extending in a first direction, and a storage unit coupled to the vertical transistor. A respective one of the bit lines and a respective storage unit are coupled to opposite ends of each one of the memory cells in the first direction. Two adjacent vertical transistors of the vertical transistors in the second direction are mirror-symmetric to one another. The array of memory cells is coupled to the peripheral circuit across the bonding interface.